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MMBTSC3356S . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MMBTSC3356S
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-base (Vcb): 20 V
   Tensión colector-emisor (Vce): 12 V
   Tensión emisor-base (Veb): 3 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 7000 MHz
   Ganancia de corriente contínua (hfe): 125
   Paquete / Cubierta: SOT23
 

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MMBTSC3356S Datasheet (PDF)

 ..1. Size:207K  semtech
mmbtsc3356q mmbtsc3356r mmbtsc3356s.pdf pdf_icon

MMBTSC3356S

MMBTSC3356 NPN Silicon Epitaxial Planar Transistor for microwave low noise amplifier at VHF, UHF and CATV band The transistor is subdivided into three groups, Q, R and S, according to its DC current gain. SOT-23 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage VCBO 20 VCollector Emitter Voltage VCEO 12 VEmitter Base V

 4.1. Size:203K  cn cbi
mmbtsc3356.pdf pdf_icon

MMBTSC3356S

MMBTSC3356 NPN Silicon Epitaxial Planar Transistorfor microwave low noise amplifier at VHF,UHF and CATV bandThe transistor is subdivided into threegroups, Q, R and S, according to its DCcurrent gain.1.Base 2.Emitter 3.CollectorHFE MARKINGSOT-23 Plastic PackageQ R23R R24S R25OAbsolute Maximum Ratings (T = 25 C)aParameter Symbol Value UnitCollector Base Voltage VCB

 7.1. Size:508K  pjsemi
mmbtsc3875-o mmbtsc3875-y mmbtsc3875-g mmbtsc3875-l.pdf pdf_icon

MMBTSC3356S

MMBTSC3875NPN Transistor Features For Switching and AF Amplifier Applications.SOT-23 As Complementary Type of the PNP Transistor (TO-236) MMBTSA1504 is Recommended.1.Base 2.Emitter 3.CollectorMarking:MMBTSC3875O:ALOMMBTSC3875Y:ALYMMBTSC3875G:ALGMMBTSC3875L:ALLAbsolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter

 8.1. Size:282K  semtech
mmbtsc4098w.pdf pdf_icon

MMBTSC3356S

MMBTSC4098W NPN Silicon Epitaxial Planar Transistor for AM/FM amplifier and local oscillator of FM/VHF tuner applications. OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage VCBO 40 VCollector Emitter Voltage VCEO 25 VEmitter Base Voltage VEBO 5 VCollector Current IC 50 mA Power Dissipation Ptot 200 mWOJunction Temperature Tj 150 C

Otros transistores... MMBTSC1623O , MMBTSC1623Y , MMBTSC1815G , MMBTSC1815L , MMBTSC1815O , MMBTSC1815Y , MMBTSC3356Q , MMBTSC3356R , 2SC945 , MMBTSC4098W , MMBTSC945L , MMBTSC945O , MMBTSC945P , MMBTSC945R , MMBTSC945Y , ST2SD1664U-P , ST2SD1664U-Q .

History: BSY71 | DTA115EE | NSBC114EPDXV6T1G | 2SD905

 

 
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