MRF1030 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MRF1030

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 29 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 30 V

Tensión emisor-base (Veb): 4 V

Corriente del colector DC máxima (Ic): 0.4 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 1000 MHz

Capacitancia de salida (Cc): 9.8 max pF

Ganancia de corriente contínua (hFE): 20

Encapsulados: CASE244-04

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MRF1030 datasheet

 ..1. Size:54K  motorola
 mrf1030.pdf pdf_icon

MRF1030

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1030/D The RF Line UHF Power Transistor MRF1030 . . . designed primarily for wideband, large signal output and driver amplifier stages to 1.0 GHz. Designed for Class A Linear Power Amplifiers Specified 25 Volt, 900 MHz Characteristics Output Power 3.0 Watts Power Gain 7.5 dB Min, Class AB 3.0 W, TO 1

 0.1. Size:54K  motorola
 mrf1030r.pdf pdf_icon

MRF1030

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1030/D The RF Line UHF Power Transistor MRF1030 . . . designed primarily for wideband, large signal output and driver amplifier stages to 1.0 GHz. Designed for Class A Linear Power Amplifiers Specified 25 Volt, 900 MHz Characteristics Output Power 3.0 Watts Power Gain 7.5 dB Min, Class AB 3.0 W, TO 1

 8.1. Size:100K  motorola
 mrf1035mbrev0.pdf pdf_icon

MRF1030

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1035MB/D The RF Line Microwave Pulse MRF1035MB Power Transistors Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 35 Watts Peak 35 W (PEAK), 960 1215 MHz Minimum Gain = 10 dB MIC

 8.2. Size:55K  motorola
 mrf1032.pdf pdf_icon

MRF1030

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1032/D The RF Line UHF Power Transistor MRF1032 . . . designed primarily for large signal output and driver amplifier stages to 1.0 GHz. Designed for Class A Linear Power Amplifiers Specified 25 Volt, 900 MHz Characteristics Output Power 6.0 Watts Power Gain 6.5 dB Min, Class AB 6.0 W, TO 1.0 GHz LI

MOSTRAR MÁS

Otros transistores... ST2SD1664U-Q, ST2SD1664U-R, MRF534, MRF536, MRF0211LT1, MRF1000MA, MRF10070, MRF1029, D209L, MRF1031, MRF1032, MRF1035MA, MRF1035MB, MRF10500, MRF10501, MRF1375, MRF1500