MRF1030 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MRF1030
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 29 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 30 V
Tensión emisor-base (Veb): 4 V
Corriente del colector DC máxima (Ic): 0.4 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 1000 MHz
Capacitancia de salida (Cc): 9.8(max) pF
Ganancia de corriente contínua (hfe): 20
Paquete / Cubierta: CASE244-04
Búsqueda de reemplazo de MRF1030
MRF1030 Datasheet (PDF)
mrf1030.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1030/DThe RF LineUHF Power TransistorMRF1030. . . designed primarily for wideband, largesignal output and driver amplifierstages to 1.0 GHz. Designed for Class A Linear Power Amplifiers Specified 25 Volt, 900 MHz Characteristics:Output Power 3.0 WattsPower Gain 7.5 dB Min, Class AB3.0 W, TO 1
mrf1030r.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1030/DThe RF LineUHF Power TransistorMRF1030. . . designed primarily for wideband, largesignal output and driver amplifierstages to 1.0 GHz. Designed for Class A Linear Power Amplifiers Specified 25 Volt, 900 MHz Characteristics:Output Power 3.0 WattsPower Gain 7.5 dB Min, Class AB3.0 W, TO 1
mrf1035mbrev0.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1035MB/DThe RF LineMicrowave PulseMRF1035MBPower TransistorsDesigned for Class B and C common base amplifier applications in short andlong pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 50 VdcOutput Power = 35 Watts Peak35 W (PEAK), 9601215 MHzMinimum Gain = 10 dBMIC
mrf1032.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1032/DThe RF LineUHF Power TransistorMRF1032. . . designed primarily for largesignal output and driver amplifier stages to1.0 GHz. Designed for Class A Linear Power Amplifiers Specified 25 Volt, 900 MHz Characteristics:Output Power 6.0 WattsPower Gain 6.5 dB Min, Class AB6.0 W, TO 1.0 GHzLI
Otros transistores... ST2SD1664U-Q , ST2SD1664U-R , MRF534 , MRF536 , MRF0211LT1 , MRF1000MA , MRF10070 , MRF1029 , BC556 , MRF1031 , MRF1032 , MRF1035MA , MRF1035MB , MRF10500 , MRF10501 , MRF1375 , MRF1500 .
History: 2N308
History: 2N308



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