MRF1500 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MRF1500
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1750 W
Tensión colector-base (Vcb): 65 V
Tensión colector-emisor (Vce): 65 V
Tensión emisor-base (Veb): 3.5 V
Corriente del colector DC máxima (Ic): 35 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 1100 MHz
Ganancia de corriente contínua (hfe): 20
Paquete / Cubierta: CASE355E-01
Búsqueda de reemplazo de transistor bipolar MRF1500
MRF1500 Datasheet (PDF)
mrf1500.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1500/DThe RF LineMicrowave PulseMRF1500Power TransistorMotorola Preferred DeviceDesigned for 10251150 MHz pulse common base amplifier applicationssuch as DME. Guaranteed Performance @ 1090 MHzOutput Power = 500 Watts Peak500 W (PEAK), 10251150 MHzGain = 5.2 dB MinMICROWAVE POWER 100% Tested
mrf1500r.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1500/DThe RF LineMicrowave PulseMRF1500Power TransistorMotorola Preferred DeviceDesigned for 10251150 MHz pulse common base amplifier applicationssuch as DME. Guaranteed Performance @ 1090 MHzOutput Power = 500 Watts Peak500 W (PEAK), 10251150 MHzGain = 5.2 dB MinMICROWAVE POWER 100% Tested
mrf15030.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF15030/DThe RF LineNPN SiliconMRF15030RF Power TransistorDesigned for 26 volts microwave largesignal, common emitter, class A andclass AB linear amplifier applications in industrial and commercial FM/AMequipment operating in the range 14001600 MHz. Specified 26 Volts, 1490 MHz, Class AB Characteristics:
mrf15030rev7.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF15030/DThe RF LineNPN SiliconMRF15030RF Power TransistorDesigned for 26 volts microwave largesignal, common emitter, class A andclass AB linear amplifier applications in industrial and commercial FM/AMequipment operating in the range 14001600 MHz. Specified 26 Volts, 1490 MHz, Class AB Characteristics:
mrf15060rev0.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF15060/DThe RF SubMicron Bipolar LineMRF15060RF Power Bipolar TransistorsMRF15060SDesigned for broadband commercial and industrial applications at frequen-cies from 1400 to 1600 MHz. The high gain and broadband performance ofthese devices makes them ideal for largesignal, commonemitter class A and60 W, 1.
mrf15060 mrf15060s.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF15060/DThe RF SubMicron Bipolar LineMRF15060RF Power Bipolar TransistorsMRF15060SDesigned for broadband commercial and industrial applications at frequen-cies from 1400 to 1600 MHz. The high gain and broadband performance ofthese devices makes them ideal for largesignal, commonemitter class A and60 W, 1.
mrf15090.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF15090/DAdvance InformationThe RF LineMRF15090NPN SiliconRF Power TransistorDesigned for 26 volts microwave largesignal, common emitter, class A andclass AB linear amplifier applications in industrial and commercial FM/AMequipment operating in the range 14001600 MHz.90 W, 1.5 GHz Specified 26 Volts, 1
mrf1507 mrf1507t1.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1507/DThe RF MOSFET LineMRF1507RF Power Field Effect TransistorMRF1507T1NChannel EnhancementMode Lateral MOSFETsThe MRF1507 is designed for broadband commercial and industrialapplications at frequencies to 520 MHz. The high gain and broadband 8 W, 520 MHz, 7.5 Vperformance of this device makes it ideal for
mrf1507rev1.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1507/DThe RF MOSFET LineMRF1507RF Power Field Effect TransistorMRF1507T1NChannel EnhancementMode Lateral MOSFETsThe MRF1507 is designed for broadband commercial and industrialapplications at frequencies to 520 MHz. The high gain and broadband 8 W, 520 MHz, 7.5 Vperformance of this device makes it ideal for
mrf150.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF150/DThe RF MOSFET LineRF Power Field-Effect TransistorNChannel EnhancementMode MRF150Designed primarily for linear largesignal output stages up to 150 MHzfrequency range. Specified 50 Volts, 30 MHz CharacteristicsOutput Power = 150 WattsPower Gain = 17 dB (Typ)150 W, to 150 MHzEfficiency = 45% (T
mrf150rev8.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF150/DThe RF MOSFET LineRF Power Field-Effect TransistorNChannel EnhancementMode MRF150Designed primarily for linear largesignal output stages up to 150 MHzfrequency range. Specified 50 Volts, 30 MHz CharacteristicsOutput Power = 150 WattsPower Gain = 17 dB (Typ)150 W, to 150 MHzEfficiency = 45% (T
mrf150re.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF150/DThe RF MOSFET LineRF Power Field-Effect TransistorNChannel EnhancementMode MRF150Designed primarily for linear largesignal output stages up to 150 MHzfrequency range. Specified 50 Volts, 30 MHz CharacteristicsOutput Power = 150 WattsPower Gain = 17 dB (Typ)150 W, to 150 MHzEfficiency = 45% (T
Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP35C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
History: 4128D | 2SA1592
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050