2SA1276 Todos los transistores

 ..1. Size:495K  no
 2n3904 2n3906 2n5401 2n5551 2sa1271 2sa1273 2sa1275 2sa1276 2sa1366 2sa1657 2sa1658 2sb1366 2sb988 2sc3190 2sc3191 2sc3192.pdf

 ..2. Size:240K  jmnic
 2sa1276.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA1276 DESCRIPTION With TO-220 package Complement to type 2SC3230 Good linearity of hFE APPLICATIONS General purpose applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL P

 ..3. Size:219K  inchange semiconductor
 2sa1276.pdf

isc Silicon PNP Power Transistor 2SA1276 DESCRIPTION Collector-Emitter Breakdown Voltage V = -30V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC3230 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Col

 8.1. Size:144K  jmnic
 2sa1279.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA1279 DESCRIPTION With TO-220F package Low collector saturation voltage APPLICATIONS High current switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collec

 8.2. Size:39K  kec
 2sa1270.pdf

 8.3. Size:39K  kec
 2sa1271.pdf

 8.4. Size:34K  kec
 2sa1273.pdf

 8.5. Size:174K  inchange semiconductor
 2sa1279.pdf

isc Silicon PNP Power Transistor 2SA1279 DESCRIPTION Collector-Emitter Breakdown Voltage V = -60V(Min) (BR)CEO Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -60