2SA1276 Todos los transistores

 

2SA1276 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SA1276
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 10 W
   Tensión colector-base (Vcb): 30 V
   Corriente del colector DC máxima (Ic): 3 A
   Temperatura operativa máxima (Tj): 135 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 100 MHz
   Capacitancia de salida (Cc): 12 pF
   Ganancia de corriente contínua (hfe): 120
   Paquete / Cubierta: TO220

 Búsqueda de reemplazo de transistor bipolar 2SA1276

 

2SA1276 Datasheet (PDF)

 ..2. Size:240K  jmnic
2sa1276.pdf

2SA1276 2SA1276

JMnic Product Specification Silicon PNP Power Transistors 2SA1276 DESCRIPTION With TO-220 package Complement to type 2SC3230 Good linearity of hFE APPLICATIONS General purpose applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 BaseAbsolute maximum ratings(Ta=25) SYMBOL P

 ..3. Size:219K  inchange semiconductor
2sa1276.pdf

2SA1276 2SA1276

isc Silicon PNP Power Transistor 2SA1276DESCRIPTIONCollector-Emitter Breakdown Voltage: V = -30V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC3230Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Col

 8.1. Size:144K  jmnic
2sa1279.pdf

2SA1276 2SA1276

JMnic Product Specification Silicon PNP Power Transistors 2SA1279 DESCRIPTION With TO-220F package Low collector saturation voltage APPLICATIONS High current switching applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collec

 8.2. Size:39K  kec
2sa1270.pdf

2SA1276

 8.3. Size:39K  kec
2sa1271.pdf

2SA1276

 8.4. Size:34K  kec
2sa1273.pdf

2SA1276

 8.5. Size:174K  inchange semiconductor
2sa1279.pdf

2SA1276 2SA1276

isc Silicon PNP Power Transistor 2SA1279DESCRIPTIONCollector-Emitter Breakdown Voltage: V = -60V(Min)(BR)CEOGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -60

Otros transistores... 2SA1269 , 2SA127 , 2SA1270 , 2SA1271 , 2SA1272 , 2SA1273 , 2SA1274 , 2SA1275 , MPSA42 , 2SA1277 , 2SA1278 , 2SA1279 , 2SA128 , 2SA1280 , 2SA1281 , 2SA1282 , 2SA1282A .

 

 
Back to Top

 


2SA1276
  2SA1276
  2SA1276
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: GN1A3Q | D965-KEHE | 2SD662B | 2SD661A | 2SC3080 | S9018L | S9012J | 2SA73L | 2SA73H | 2SA1015H | WT955 | TS13005CK | TP5001P3 | SS8550W-L | SS8550W-J | SS8550W-H | SS8550E | SS8550D | SS8550C | SS8050E | SS8050D

 

 

 
Back to Top