MRF6402 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MRF6402

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 15 W

Tensión colector-base (Vcb): 45 V

Tensión colector-emisor (Vce): 40 V

Tensión emisor-base (Veb): 3.5 V

Corriente del colector DC máxima (Ic): 0.7 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 1880 MHz

Capacitancia de salida (Cc): 6 pF

Ganancia de corriente contínua (hFE): 50

Encapsulados: CASE319-07

 Búsqueda de reemplazo de MRF6402

- Selecciónⓘ de transistores por parámetros

 

MRF6402 datasheet

 ..1. Size:120K  motorola
 mrf6402.pdf pdf_icon

MRF6402

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF6402/D The RF Line NPN Silicon MRF6402 RF Power Transistor The MRF6402 is designed for 1.8 GHz Personal Communications Network (PCN) base stations applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. For ease of design, this transi

 0.1. Size:153K  motorola
 mrf6402rev7.pdf pdf_icon

MRF6402

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF6402/D The RF Line NPN Silicon MRF6402 RF Power Transistor The MRF6402 is designed for 1.8 GHz Personal Communications Network (PCN) base stations applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. For ease of design, this transi

 0.2. Size:120K  motorola
 mrf6402r.pdf pdf_icon

MRF6402

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF6402/D The RF Line NPN Silicon MRF6402 RF Power Transistor The MRF6402 is designed for 1.8 GHz Personal Communications Network (PCN) base stations applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. For ease of design, this transi

 8.1. Size:276K  motorola
 mrf6404rev2.pdf pdf_icon

MRF6402

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF6404/D The RF Line MRF6404 NPN Silicon MRF6404K RF Power Transistor The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to 30 W, 1.88 GHz 2.0 GHz. RF POWER TRANSISTOR Specified 26 Volts, 1.88 GHz Characteristics NPN SILICON

MOSTRAR MÁS

Otros transistores... MRF4427R2, MRF553, MRF557, MRF5583, MRF559, MRF5812, MRF5811LT1, MRF5943, 2N3904, MRF6404, MRF6404K, MRF6408, MRF6409, MRF653S, MRF837, MRF8372R1, MRF8372R2