MMBT5401-H . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMBT5401-H
Código: 2L
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.3 W
Tensión colector-base (Vcb): 160 V
Tensión colector-emisor (Vce): 150 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.6 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 100 MHz
Ganancia de corriente contínua (hfe): 200
Paquete / Cubierta: SOT23
- Selección de transistores por parámetros
MMBT5401-H Datasheet (PDF)
mmbt5401-l mmbt5401-h.pdf

Jingdao Microelectronics co.LTD MMBT5401MMBT5401SOT-23PNP TRANSISTOR3FEATURES Complementary to MMBT5551 Ideal for Medium Power Amplification and Switching 1MAXIMUM RATINGS (Ta=25 unless otherwise noted)2SymbolParameter Value Unit1.BASECollectorBase Voltage VCBO -160 V2.EMITTER3.COLLECTORCollec
mmbt5401 mmbt5401-l mmbt5401-h.pdf

MMBT5401 SOT-23 PNP Transistors321.BaseFeatures 2.Emitter1 3.Collector High Voltage TransistorsPb-Free Packages are Available Simplified outline(SOT-23)Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector-base voltage VCBO -160 VCollector-emitter voltage VCEO -150 VEmitter-base voltage VEBO -5 VCollector current-continuous IC -0.6 ACollector P
mmbt5401-haf.pdf

MMBT5401-HAF PNP Silicon Epitaxial Planar Transistor Features Halogen and Antimony Free(HAF), RoHS compliant 1. Base 2. Emitter 3. Collector TO-236 Plastic Package Applications For high voltage amplifier applications Absolute Maximum Ratings (T = 25 ) aParameter Symbol Value Unit Collector Base Voltage -V 160 V CBOCollector Emitter Voltage -V 150 V CEOEmitt
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: MPQ2369 | SGSIF444 | 3DD13003J8D | 3DD13003F1D | PN4142 | ZXT13N15DE6 | ZXT12P12DX
History: MPQ2369 | SGSIF444 | 3DD13003J8D | 3DD13003F1D | PN4142 | ZXT13N15DE6 | ZXT12P12DX



Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
c945 transistor | irf640n | 2n3904 | bc547 datasheet | k3797 mosfet | bs170 datasheet | tip41c | irfp460