MMBT5551-H . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Jingdao Microelectronics co.LTD MMBT5551MMBT5551SOT-23NPN TRANSISTOR3FEATURES Complementary to MMBT5401 Ideal for Medium Power Amplification and Switching 1MAXIMUM RATINGS (Ta=25 unless otherwise noted)2SymbolParameter Value Unit1.BASECollectorBase Voltage VCBO 180 V2.EMITTERCollectorEmitter V

MMBT5551TRANSISTOR(NPN)SOT-23 Plastic-Encapsulate TransistorsSOT-23 Features Complementary to MMBT5401 300mW; Power Dissipation of 300mW High Stability and High ReliabilityMechanical Data SOT-23 Small Outline Plastic Package UL Epoxy UL: 94V-0 Mounting Position: AnyMarking: G1Maximum Ratings & Thermal Characteristics (Ratings at 25 ambient temperature unl

www.msksemi.comMMBT5551-MSSemiconductor CompianceSemiconductor CompianceTRANSISTOR (NPN)FEATURES Complementary to MMBT5401-MS Ideal for Medium Power Amplification and Switching1. BASE2. EMITTERMARKING: G1SOT23 3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Volt

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBT5550LT1/DMMBT5550LT1High Voltage Transistors*MMBT5551LT1COLLECTORNPN Silicon3*Motorola Preferred Device1BASE23EMITTERMAXIMUM RATINGS1Rating Symbol Value Unit2CollectorEmitter Voltage VCEO 140 VdcCollectorBase Voltage VCBO 160 VdcCASE 31808, STYLE 6SOT23 (TO236AB)Emitter

June 20092N5551 / MMBT5551NPN General Purpose AmplifierFeatures This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Suffix -C means Center Collector in 2N5551 (1. Emitter 2. Collector 3. Base) Suffix -Y means hFE 180~240 in 2N5551 (Test condition : IC = 10mA, VCE = 5.0V) 2N5551 MMBT555132TO-92SOT-23

MMBT5551 160V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data BVCEO > 160V Case: SOT-23 Case Material: Molded Plastic, Green molding compound. Ideal for Low Power Amplification and Switching UL Flammability Classification Rating 94V-0 Complementary PNP Type Available (MMBT5401) Moisture Sensitivity: Level 1 per J-STD-020 Totally

MCCMicro Commercial ComponentsTMMMBT555120736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939FeaturesNPN Plastic Halogen free available upon request by adding suffix "-HF" Collector Current: ICM=0.6AEncapsulate Collector-Base Voltage: V(BR)CBO=180V Operating And Storage Temperatures 55OC to 150OC

MMBT5550L, MMBT5551LHigh Voltage TransistorsNPN SiliconFeatures S Prefix for Automotive and Other Applications Requiring Uniquewww.onsemi.comSite and Control Change Requirements; AEC-Q101 Qualified andPPAP CapableCOLLECTOR3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASEMAXIMUM RATINGSRating Symbol Value Unit2EMITTERCollector

MMBT5551M3NPN High VoltageTransistorThe MMBT5551M3 device is a spin-off of our popular SOT-23three-leaded device. It is designed for general purpose high voltageapplications and is housed in the SOT-723 surface mount package.www.onsemi.comThis device is ideal for low-power surface mount applications whereboard space is at a premium.COLLECTORFeatures3 Reduces Board Spa

March March 201882N5551 / MMBT5551NPN General-Purpose AmplifierDescriptionThis device is designed for general-purpose high-voltageamplifiers and gas discharge display drivers. 2N5551 MMBT555132TO-92SOT-231Marking: 3S1. Base 2. Emitter 3. CollectorOrdering Information(1)Part Number Top Mark Package Packing Method2N5551TA 5551 TO-92 3L Ammo2N5551TFR 5551 TO-92 3L

MMBT5550LT1G,MMBT5551LT1GHigh Voltage TransistorsNPN Siliconhttp://onsemi.comFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant3MAXIMUM RATINGS 1BASERating Symbol Value UnitCollector-Emitter Voltage VCEO Vdc2MMBT5550 140EMITTERMMBT5551160Collector-Base Voltage VCBO VdcMARKINGMMBT5550 1603DIAGRAMMMBT555118

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

MMBT5550L, MMBT5551L,SMMBT5551LHigh Voltage TransistorsNPN Siliconhttp://onsemi.comFeatures AEC-Q101 Qualified and PPAP CapableCOLLECTOR S Prefix for Automotive and Other Applications Requiring Unique3Site and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1BASECompliant2MAXIMUM RATINGSEMITTERRating Symbol Va

UNISONIC TECHNOLOGIES CO., LTD MMBT5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR 3 DESCRIPTION The UTC MMBT5551 is a high voltage fast-switching NPN 1power transistor. It is characterized with high breakdown voltage, 2high current gain and high switching speed. SOT-23(JEDEC TO-236) FEATURES * High Collector-Emitter Voltage: VCEO=160V * High c

MMBT5551W NPN Silicon Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product SOT-323 A suffix of -C specifies halogen & lead-free FEATURE AL Ideal for Medium Power Amplification and Switching 33 Also Available in Lead Free Version Top View C B Complementary to MMBT5401W 11 22K EDCollector H JF G3 MARKING: K4N Mi

MMBT5551NPN SiliconElek t ronische Bauelemente General Purpose TransistorRoHS Compliant ProductA suffix of "-C" specifies halogen & lead-free SOT-23Dim Min MaxAL A 2.800 3.040B 1.200 1.4003 FEATURESC 0.890 1.110STop ViewB1 2D 0.370 0.500G 1.780 2.040 Power dissipation V GH 0.013 0.100o PCM: 0.3 W (Tamb=25 C) J 0.085 0.177CK 0.450 0.600 Collect

www.jscj-elec.com AD-MMBT5551 series JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. AD-MMBT5551 Series Plastic-Encapsulated Transistor AD-MMBT5551 series Transistor (NPN) FEATURES Complementary to AD-MMBT5401 series Ideal for medium power amplification and switching AEC-Q101 qualified MARKING G1 = Device code G1 EQUIVALENT CIRCUIT 3 1 2 Versio

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-23 Plastic-Encapsulate Transistors MMBT5551 TRANSISTOR (NPN) SOT23 FEATURES Complementary to MMBT5401 Ideal for Medium Power Amplification and Switching 1. BASE MARKING: G1 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value UnitVCBO Collector-Base Voltage

Zowie Technology CorporationHigh Voltage TransistorsLead free productHalogen-free typeFEATURE We declare that the material of product compliance with RoHS requirements.3COLLECTOR3MMBT5550GH11BASEMMBT5551GH 22SOT-23EMITTERMAXIMUM RATINGSRating Symbol Value UnitCollectorEmitter Voltage V CEO 140 VdcCollectorBase Voltage V CBO 160 VdcEmitterB

MMBT5551TRANSISTOR(NPN)SOT23 FEATURES Complementary to MMBT5401 Ideal for Medium Power Amplification and Switching 1. BASE MARKING: G1 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value UnitVCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 6 V IC Collector Current 6

Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GM5551MAXIMUM RATINGSMAXIMUM RATINGS MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector Emitter VoltageVCEO 160 Vdc-

MMBT5551 Transistor(NPN)SOT-231. BASE 2. EMITTER 3. COLLECTOR Features Complementary to MMBT5401 Ideal for medium power amplification and switching MARKING: G1 MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Parameter Value UnitsVCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Ba

FM120-M MMBT5551DW1T1WILLASTHRUDUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTORFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low prFEATUREofile surface mounted appli

FM120-M WILLASTHRUMMBT5551WT1FM1200-M 1.0A SURFACE MOUNT SCHOTTKYDUAL NPN SMALL SIGNAL SURFACE BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductMOUNT TRANSISTORPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in

Shenzhen Tuofeng Semiconductor Technology Co., Ltd. SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT5551LT1 TRANSISTOR (NPN) 1. BASE 2. EMITTER FEATURES 3. COLLECTOR Power dissipation 2. 4 PCM: 0.3 W (Tamb=25) 1. 3 Collector current ICM: 0.6 A Collector-base voltage V(BR)CBO: 180 V Operating and storage junction temperature range Unit: mm TJ, T

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors MMBT5551 TRANSISTOR (NPN) FEATURES Complimentary to MMBT5401 MARKING:G1 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-B

MMBT5551 Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features , MMBT5401 High voltage, complementary pair with MMBT5401. / Applications General purpose high voltage amplifier. / Eq

MMBT5551T(BR3DG5551T) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-89 NPN Silicon NPN transistor in a SOT-89 Plastic Package. / Features , MMBT5401T(BR3CG5401T)High voltage, complementary pair with MMBT5401T(BR3CG5401T). / Applications General purpose high voltag

MMBT5551 NPN Silicon Epitaxial Planar Transistors for high voltage amplifier applications. TO-236 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO 180 V Collector Emitter Voltage VCEO 160 VEmitter Base Voltage VEBO 6 VCollector Current IC 600 mAPower Dissipation Ptot 350 mWOJunction Temperature Tj 150 C O

SMD Type TransistorsSMD TypeNPN Transistors(KMBT5551)MMBT5551SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13FeaturesHigh Voltage TransistorsPb-Free Packages are Available1 2+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO 180 VCollector-emitter volt

MMBT5551NPN HIGH VOLTAGE TRANSISTOR160 Volts POWER 250 mWattsVOLTAGEFEATURES0.120(3.04)0.110(2.80) NPN Silicon, planar design Collector-emitter voltage VCE = 160V Collector current IC = 600mA Lead free in compliance with EU RoHS 2.0 0.056(1.40) Green molding compound as per IEC 61249 standard0.047(1.20)0.079(2.00) 0.008(0.20)MECHANICAL DATA0.070(1.

Product specification NPN General Purpose Transistor MMBT5551 FEATURES Pb Epitaxial planar die construction. Lead-free Complementary PNP type available (MMBT5401). Also available in lead free version. MSL 1 APPLICATIONS Ideal for medium power amplification and switching. SOT-23 ORDERING INFORMATION Type No. Marking Package Code MMBT5551 G

MMBT5551NPN General Purpose Transistor FEATURES Epitaxial planar die construction. Complementary PNP type available (MMBT5401). Also available in lead free version. APPLICATIONS Ideal for medium power amplification and switching SOT-23MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol Parameter Value UNITVCBO collector-base voltage 180 V VCEO collecto

RUMW UMW MMBT5551SOT-23 Plastic-Encapsulate TransistorsMMBT5551 TRANSISTOR (NPN) SOT23 FEATURES Complementary to MMBT5401 Ideal for Medium Power Amplification and Switching 1. BASE MARKING: G1 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value UnitVCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage

MMBT5551SOT-23 Features(TO-236) For Switching and Amplifier Applications. Silicon Epitaxial Chip 1 Base 2. Emitter 3. Collector Absolute Maximum Ratings (T =25 oC, unless otherwise noted)AParameter Symbol Value Unit Collector Base Voltage V 180 V CBO Collector Emitter Voltage V 160 V CEO Emitter Base Voltage V 6 V EBO Collector Current I 600 mA C Powe

MMBT5550 / MMBT5551High Voltage TransistorsNPN SiliconPackage outlineFeatures High collector-emitterbreakdien voltage.SOT-23(BV = 140V~ 160V@I =1mA)CEO C This device is designed for general purpose high voltageamplifiers and gas discharge display driving. Epitaxial planar die construction. Lead-free parts for green partner, exceeds environmentalstandards of

MMBT5551Transistors SOT-23 Plastic-Encapsulate Transistors(NPN) RHOS SOT-23 FeaturesComplementary to MMBT5401 Epitaxial planar die construction Power Dissipation of 300mW 1. BASE MARKING: G12. EMITTER 3. COLLECTOR Maximum Ratings (Ratings at 25 ambient temperature unless otherwise specified.) Parameters Symbol Value Unit Collector-Base Voltage VCBO

MMBT5551High Voltage TransistorsNPN SiliconFEATURES Complementary to MMBT5401SOT-23 Ideal for Medium Power Amplification and SwitchingMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 6 V IC Collector Current 600 mA PC Collector Power Dissipatio

SOT-23 Plastic-Encapsulate Transistors Formosa MSMMBT5551 TRANSISTOR (NPN) FEATURES SOT-23 Complementary to MMBT5401 Ideal for medium power amplification and switching 1. BASE 2. EMITTER 3. COLLECTOR - MARKING: G1 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V

MMBT5551 HD-ST0.44SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( NP N )Features SOT- 23 Complementary to MMBT5401 Ideal for Medium Power Amplification and Switching Marking: G1Symbol Parameter Value Unit VCBO Collector-Base Voltage 180 V V Collector-Emitter Voltage 160 V CCEOV Emitter-Base Voltage 6 V EBOI Collector Current 600 mA CP Coll

MMBT5551NPN General Purpose TransistorFEATURES Epitaxial planar die construction. Complementary PNP type available (MMBT5401). Also available in lead free version. APPLICATIONS Ideal for medium power amplification and switching. SOT-23 MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol Parameter Value UNIT VCBO collector-base voltage 180 V VCEO collec

MMBT5551TRANSISTOR(NPN)FEATURES Complementary to MMBT5401 Ideal for Medium Power Amplification and Switching SOT-23 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Symbol Parameter Value UnitVCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 6 V IC Collector Current 600 mA PC Collector Power Dissipation 300 mW R

MMBT5551GENERAL PURPOSE TRANSISTORS NPN Silicon FEATURES NPN Silicon Epitaxial planar Transistor For Switching And Amplifier Applications Collector Current IC=600mA C MECHANICAL DATA E Available in SOT-23 Package SolderabilityMIL-STD-202, Method 208 Full RoHS Compliance B ORDERING INFORMATION PART NUMBER PACKAGE SHIPPING MARKING CODE G1

MMBT5551DW Descriptions Doublesilicon NPN transistor in a SOT-363 Plastic Package. Features High voltage, complementary pair with MMBT5401DW. Applications General purpose high voltage amplifier. Equivalent Circuit PinningPIN 14Emitter PIN 25Base PIN 36Collector hFE Classifications & Marking See Marking Instructions. REV.081 of 6MMBT55

Integrated inOVP&OCP productsprovider MMBT5551 TRANSISTOR (NPN)FEATURES SOT-23 Complementary to MMBT5401 Ideal for medium power amplification and switching 1BASE 2EMITTER 3COLLECTOR MARKING: G1 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emi

MMBT5551 SOT-23 NPN Transistors321.Base2.EmitterFeatures1 3.CollectorHigh Voltage Transistors Simplified outline(SOT-23)Pb-Free Packages are AvailableAbsolute Maximum Ratings Ta = 25 Parameter Symbol Rating UnitCollector-base voltage VCBO 180 VCollector-emitter voltage VCEO 160 VEmitter-base voltage VEBO 6 VCollector current-continuous IC 0.6 ACollector Powe

MMBT5551 SOT-23 Plastic-Encapsulate Transistors MMBT5551 TRANSISTOR (NPN) FEATURES Complimentary to MMBT5401 MARKING:G1 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage - 180 V VCEO Collector-Emitter Voltage -

MMBT5551 TRANSISTOR(NPN) SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features MMBT5401 ; Complementary to MMBT5401 300mW; Power Dissipation of 300mW High Stability and High Reliability Mechanical Data : SOT-23 SOT-23 Small Outline Plastic Pack

MMBT5551MMBT5551AO3400SI2305MMBT5551 TRANSISTOR (NPN) FEATURES Complementary to MMBT5401 SOT-23 Ideal for medium power amplification and switching 1BASE MARKING: G1 2EMITTER 3COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 180 VVCEO Collector-Emitter Voltage 160 VVEBO Emitter-Base Volt

RoHS COMPLIANT MMBT5551Q NPN General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating and halogen free Moisture Sensitivity Level 1 High Voltage Transistors NPN Silicon Part no. with suffix Q means AEC-Q101 qualified Applications Linear amplification Mechanical Data : SOT-23 Case Terminals: Tin plated leads, solder

RoHS COMPLIANT MMBT5551 NPN General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating Moisure Sensitivity Level 1 Marking:G1 Maximum Rantings (Ta=25) Item Symbol Unit Conditions Value Collector-Emitter Voltage* VCEO V IC=1.0mAdc, IB=0 160 Collector-Base Voltage VCBO V IC=100uAdc, IE=0 180 Emitter-Base Voltage VEBO V IE=10uAdc, IC=0 6.0

MMBT5551 MMBT5551 SOT-23 Plastic-Encapsulate Transistors(NPN) General description SOT-23 Plastic-Encapsulate Transistors(NPN) FEATURES Complementary to MMBT5401 Power Dissipation of 300mW High Stability and High Reliability SOT-23 Small Outline Plastic Package Epoxy UL: 94V-0 DEVICE MARKING CODE: Device Type Device Marking MMBT5551 G1 . Maximum Ra

MMBT5551 TRANSISTOR (NPN) FEATURES SOT-23 Complementary to MMBT5401 Ideal for medium power amplification and switching 1BASE 2EMITTER 3COLLECTOR MARKING: G1 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 6 V IC Collector Curren

MMBT5551T TRANSISTOR (NPN)FEATURESComplementary to MMBT5401Ideal for medium power amplification and switchingMARKING: G1MAXIMUM RATINGS (T =25 unless otherwise noted)ASymbol Parameter Value UnitsVCBO Collector-Base Voltage180 VVCEO Collector-Emitter Voltage 160 VVEBO Emitter-Base Voltage6 VI Collector Current -Continuous 0.6 ACP Collector Power Dissipation 200

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTDMMBT5551FEATURES NPN High Voltage TransistorMAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Emitter VoltageV 160 VdcCEO-Collector Base VoltageV 180 VdcCBO-Emitter

MMBT5551NPN GENERAL PURPOSE SWITCHING TRANSISTOR160Volts POWER 300mWattsVOLTAGEFEATURESNPN epitaxial silicon, planar design. Collector-emitter voltage VCE=160V.Collector current IC=0.6A.ansition frequency fT>100MHz @ TrIC=10mAdc, VCE=6Vdc, f=100MHz.In compliance with ER RoHS 2002/95/EC directives.MECHANICAL DATACase: SOT-23, Plastic3Terminals: S

MMBT5551BIPOLAR TRANSISTOR (NPN)FEATURES Complementary to MMBT5401 Ideal for medium power amplification and switching Surface Mount deviceSOT-23MECHANICAL DATA Case: SOT-23 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0Weight: 0.008 grams (approximate)MAXIMUM RATINGS (T = 25C unless otherwise noted)AParameter Symb

NPN MMBT5551MMBT5551 TRANSISTOR (NPN) FEATURES SOT-23 Complementary to MMBT5401 Ideal for medium power amplification and switching 1BASE 2EMITTER 3COLLECTOR MARKING: G1 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter