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MMBTA92-L . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MMBTA92-L
   Código: 2D
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.3 W
   Tensión colector-base (Vcb): 300 V
   Tensión colector-emisor (Vce): 300 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.2 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 50 MHz
   Ganancia de corriente contínua (hfe): 80
   Paquete / Cubierta: SOT23

 Búsqueda de reemplazo de transistor bipolar MMBTA92-L

 

MMBTA92-L Datasheet (PDF)

 ..1. Size:532K  cn yfw
mmbta92 mmbta92-l.pdf

MMBTA92-L
MMBTA92-L

MMBTA92 SOT-23 PNP Transistors32 1.Base Features2.Emitter1 3.Collector High voltage transistor Low collector-emitter saturation voltage Simplified outline(SOT-23) Complementary to MMBTA42 (NPN) Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -300 Collector - Emitter Voltage VCEO -300 V Emitter

 6.1. Size:591K  panjit
mmbta92-au.pdf

MMBTA92-L
MMBTA92-L

MMBTA92-AUPNP HIGH VOLTAGE TRANSISTORSOT-23 Unit : inch(mm) VOLTAGE 300 Volt POWER 250 mWattFEATURES PNP silicon, planar design High voltage (max. 300V) Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standard AEC-Q101 qualifiedMECHANICAL DATA Case: SOT-23, Plastic Terminals: Solderable per MIL-STD-750, Method 2026

 6.2. Size:150K  comchip
mmbta92-g.pdf

MMBTA92-L
MMBTA92-L

General Purpose TransistorMMBTA92-G (PNP)RoHS DeviceFeaturesSOT-230.119(3.00) -High voltage transistor.0.110(2.80)30.056(1.40)0.047(1.20)Diagram:1 20.079(2.00)Collector0.071(1.80)30.006(0.15)0.003(0.08)10.041(1.05) 0.100(2.550)Base0.035(0.90) 0.089(2.250)20.004(0.10) maxEmitter0.020(0.50)0.020(0.50) 0.012(0.30)0.012(0.30) Dimensions in

 6.3. Size:3925K  msksemi
mmbta92-ms.pdf

MMBTA92-L
MMBTA92-L

www.msksemi.comMMBTA92-MSSemiconductor CompianceSemiconductor Compiance TRANSISTOR (PNP) FEATURES High voltage transistor 1. BASE2. EMITTERSOT23 MARKING:2D3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -5 V IC Collecto

Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: 2N1634 | 2N1866 | 2N1681

 

 
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History: 2N1634 | 2N1866 | 2N1681

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