2SA1286
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SA1286
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.9
W
Tensión colector-base (Vcb): 30
V
Tensión colector-emisor (Vce): 20
V
Tensión emisor-base (Veb): 6
V
Corriente del colector DC máxima (Ic): 1.5
A
Temperatura operativa máxima (Tj): 125
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 90
MHz
Capacitancia de salida (Cc): 40
pF
Ganancia de corriente contínua (hfe): 800
Paquete / Cubierta:
TO92
Búsqueda de reemplazo de transistor bipolar 2SA1286
2SA1286
Datasheet (PDF)
..1. Size:143K isahaya
2sa1286.pdf 
ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
8.1. Size:40K sanyo
2sa1289.pdf
Ordering number:ENN1199DPNP/NPN Epitaxial Planar Silicon Transistors2SA1289/2SC325360V/5A High-Speed Switching ApplicationsApplications Package Dimensions Various inductance lamp drivers for electricalunit:mmequipment.2010C Inverters, converters (strobo, flash, fluorescent lamp[2SA1289/2SC3253]lighting circuit).10.24.53.65.1 Power amp (high power car ste
8.2. Size:68K isahaya
2sa1283.pdf
http://www.idc-com.co.jp 854-0065 6-41
8.3. Size:159K isahaya
2sa1282.pdf
ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
8.4. Size:162K isahaya
2sa1285.pdf
ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
8.5. Size:144K isahaya
2sa1287.pdf
ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
8.6. Size:146K jmnic
2sa1280.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1280 DESCRIPTION With TO-220F package High breakdown voltage High power dissipation APPLICATIONS For use in low frequency power amplifier Color TV vertical deflection output PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol3 EmitterAbsolute maximum ratings (Ta=
8.7. Size:195K jmnic
2sa1289.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1289 DESCRIPTION With TO-220 package Complement to type 2SC3253 Low saturation voltage Short switching time APPLICATIONS Various inductance lamp drivers for electrical equipment Inverters;converters Power amplification Switching regulator ,driver PINNING PIN DESCRIPTION1 Emitter Collecto
8.8. Size:158K jmnic
2sa1288.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1288 DESCRIPTION With TO-220 package Low collector saturation voltage Short switching time APPLICATIONS Various inductance lamp drivers for electrical equipment Inverters;converters Power amplification Switching regulator ,driver PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2
8.9. Size:166K inchange semiconductor
2sa1283.pdf
isc Silicon PNP Transistor 2SA1283DESCRIPTIONHigh Voltage and High CurrentVceo=-60V(Min.Excellent hFE LinearityLow NoiseMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency general purpose amplifier ApplicationsDriver stage amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER V
8.10. Size:174K inchange semiconductor
2sa1280.pdf
isc Silicon PNP Power Transistor 2SA1280DESCRIPTIONCollector-Emitter Breakdown Voltage: V = -150V(Min)(BR)CEOGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -15
8.11. Size:219K inchange semiconductor
2sa1289.pdf
isc Silicon PNP Power Transistor 2SA1289DESCRIPTIONLow Collector Saturation Voltage-: V = -0.4V(Max.)@I = -2.5ACE(sat) CFast Switching SpeedComplement to Type 2SC3253Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSVarious inductance lamp drivers for electrical equipment.Inverters, converters(strobo, flash, fluorescen
8.12. Size:194K inchange semiconductor
2sa1288.pdf
isc Silicon PNP Power Transistor 2SA1288DESCRIPTIONLow Collector Saturation VoltageLarge Current CapabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifiersSwitching regulatorABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -80 VCBOV Collector-Emitter Voltage -
Otros transistores... 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
, B772
, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.
