MMBTSS8050J . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MMBTSS8050 NPN Silicon General Purpose Transistors Features SOT23 High current capacity in compact package IC = 1.5A. Epitaxial planar type Pb-Free package is available Mechanical data Epoxy UL94-V0 rated flame retardant (B) (C) Case Molded plastic, SOT-23 (A) Terminals Solder plated, solderable per MIL-STD-750, Method 2026 0.063 (1.60) 0.027 (0.67)

MMBTSC4098W NPN Silicon Epitaxial Planar Transistor for AM/FM amplifier and local oscillator of FM/VHF tuner applications. O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 25 V Emitter Base Voltage VEBO 5 V Collector Current IC 50 mA Power Dissipation Ptot 200 mW O Junction Temperature Tj 150 C

MMBTSC1815 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups O, Y, G and L, according to its DC current gain. As complementary type the PNP transistor MMBTSA1015 is recommended. TO-236 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO

MMBTSA1504 PNP Silicon Epitaxial Planar Transistor For switching and general purpose applications. The transistor is subdivided into three groups O, Y and G, according to its DC current gain. TO-236 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO 50 V Collector Emitter Voltage -VCEO 50 V Emitter Base Voltage -VEBO

MMBTSA733 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups R, O, Y, P and L, according to its DC current gain. As complementary type the NPN transistor MMBTSC945 is recommended. TO-236 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO

MMBTSC1623 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain SOT-23 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 50 V Emitter Base Voltage VEBO 5 V

MMBTSC3356 NPN Silicon Epitaxial Planar Transistor for microwave low noise amplifier at VHF, UHF and CATV band The transistor is subdivided into three groups, Q, R and S, according to its DC current gain. SOT-23 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO 20 V Collector Emitter Voltage VCEO 12 V Emitter Base V

MMBTSC945 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups R, O, Y, P and L, according to its DC current gain. As complementary type the PNP transistor MMBTSA733 is recommended. TO-236 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO

MMBTSA812 PNP Silicon Epitaxial Planar Transistor for audio frequency, general purpose amplifier. The transistor is subdivided into four groups O, Y, G and L, according to its DC current gain. 1.Base 2.Emitter 3.Collector SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage -VCBO 60 V Collector Emitter Voltage -VCEO 5

MMBTSC1623 NPN Transistor Features SOT-23 High DC Current gain. High voltage 1.Base 2.Emitter 3.Collector Marking Code L4 L4. L5 L5. L6 L6. L7 L7. Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage V 60 V CBO Collector Emitter Voltage V 50 V CEO Emitter Base V

MMBTSC945 NPN Transistor SOT-23 Features (TO-236) Excellent hFE Linearity Low noise 1.Base 2.Emitter 3.Collector Marking CR Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage V 60 V CBO Collector Emitter Voltage V 50 V CEO Emitter Base Voltage V 5 V EBO Collector Curr

MMBTSC3875 NPN Transistor Features For Switching and AF Amplifier Applications. SOT-23 As Complementary Type of the PNP Transistor (TO-236) MMBTSA1504 is Recommended. 1.Base 2.Emitter 3.Collector Marking MMBTSC3875O ALO MMBTSC3875Y ALY MMBTSC3875G ALG MMBTSC3875L ALL Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter

MMBTSC2412 TRANSISTOR (NPN) FEATURES SOT-23 Low Cob ,Cob = 2.0 pF (Typ). 1 BASE 2 EMITTER 3 COLLECTOR MARKING BR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 7 V IC Collector Current -Continuous 150 mA PC Collector Power Dissipa

NPN Silicon Epitaxial Planar Transistor The transistor is subdivided into three groups Q, R and S according to its DC current gain. O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 50 V Emitter Base Voltage VEBO 7 V Collector Current IC 150 mA Power Dissipation Ptot 200 mW O Junction Temperature Tj

MMBTSC3356 NPN Silicon Epitaxial Planar Transistor for microwave low noise amplifier at VHF, UHF and CATV band The transistor is subdivided into three groups, Q, R and S, according to its DC current gain. 1.Base 2.Emitter 3.Collector HFE MARKING SOT-23 Plastic Package Q R23 R R24 S R25 O Absolute Maximum Ratings (T = 25 C) a Parameter Symbol Value Unit Collector Base Voltage VCB

MMBTSC2712 NPN Silicon Epitaxial Planar Transistor for audio frequency general purpose amplifier applications. The transistor is subdivided into four groups O, Y, G and L, according to its DC current gain. Features High voltage and high current VCEO=50V, IC=150mA(max) 1.Base 2.Emitter 3.Collector High hFE hFE=70 700 SOT-23 Plastic Package Low noise NF=1dB(typ.), 10dB

PNP Silicon Epitaxial Planar Transistor The transistor is subdivided into three groups Q, R and S according to its DC current gain. O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO 60 V Collector Emitter Voltage -VCEO 50 V Emitter Base Voltage -VEBO 6 V Collector Current -IC 150 mA Power Dissipation Ptot 200 mW O Junction Temperatur

MMBTS8550 PNP Silicon Tr ansistors Features Collector current IC=0.5A SOT23 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit Collector Base Voltage -40 VCBO V VCEO -25 V Collector Emitter Voltage (B) (C) -5 (A) Emitter Base Voltage VEBO V A Collector Current Continuous IC -0.5 0.063 (1.60) 0.027 (0.67) 0.047 (1.20) 0.013 (0.