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S8050J . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: S8050J
   Código: J3Y
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.3 W
   Tensión colector-base (Vcb): 40 V
   Tensión colector-emisor (Vce): 25 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 150 MHz
   Ganancia de corriente contínua (hfe): 300
   Paquete / Cubierta: SOT23

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S8050J Datasheet (PDF)

 ..1. Size:476K  cn yfw
s8050 s8050l s8050h s8050j.pdf

S8050J
S8050J

S8050 SOT-23 NPN Transistors32 1.Base2.Emitter1 3.Collector FeaturesCollector Current: IC=0.5A Simplified outline(SOT-23)Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating UnitCollector-Base Voltage VCBO 40 VCollector-Emitter Voltage VCEO 25 VEmitter-Base Voltage VEBO 5 VCollector Current -Continuous IC 0.5 ACollector Dissipation PC 0.3 WJunction Tempe

 ..2. Size:941K  cn zre
s8050l s8050h s8050j.pdf

S8050J
S8050J

S8050 TRANSISTOR(NPN) SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features S8550 ; Complementary to S8550 300mW; Power Dissipation of 300mW High Stability and High Reliability Mechanical Data : SOT-23 SOT-23 Small Outline Plastic Package

 ..3. Size:1221K  cn xch
s8050l s8050h s8050j.pdf

S8050J
S8050J

S8050 Features Complimentary to S8550 Collector Current: IC=0.5A SOT-23Marking Code:J3YADim Min MaxCA0.37 0.51B C B1.20 1.40C2.30 2.50TOP VIEWB ED0.89 1.03DEGE0.45 0.60G1.78 2.05H H2.80 3.00JMAXIMUM RATINGS (Ta=25 unless otherwise noted) 0.013 0.10KK0.903 1.10SymbolParameter

 0.1. Size:365K  umw-ic
ss8050l ss8050h ss8050j.pdf

S8050J
S8050J

RUMW UMW SS8050SOT-23 Plastic-Encapsulate TransistorsSOT-23 SS8050 TRANSISTOR (NPN) 1. BASE FEATURES 2. EMITTER Complimentary to SS8550 3. COLLECTOR MARKING: Y1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Conti

 0.2. Size:1170K  cn yongyutai
ss8050l ss8050h ss8050j.pdf

S8050J
S8050J

SS8050 TRANSISTOR (NPN) SOT-323 FEATURES Complimentary to SS8550 1. BASE 2. EMITTER MARKING: Y1 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 40 V CBOVCEO Collector-Emitter Voltage 25 V V Emitter-Base Voltage 5 V EBOI Collector Current 1.5 A CP Collector Power Dissipation 250 mW CR Therm

 0.3. Size:1002K  cn zre
ss8050l ss8050h ss8050j.pdf

S8050J
S8050J

SS8050 TRANSISTOR(NPN) SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features SS8550 ; Complementary to SS8550 300mW; Power Dissipation of 300mW High Stability and High Reliability Mechanical Data : SOT-23 SOT-23 Small Outline Plastic Package

 0.4. Size:1830K  cn shunye
mmbtss8050l mmbtss8050h mmbtss8050j.pdf

S8050J
S8050J

MMBTSS8050NPN Silicon General Purpose Transistors FeaturesSOT23 High current capacity in compact package IC = 1.5A. Epitaxial planar type Pb-Free package is availableMechanical data Epoxy:UL94-V0 rated flame retardant(B)(C) Case : Molded plastic, SOT-23(A) Terminals : Solder plated, solderable perMIL-STD-750, Method 20260.063 (1.60)0.027 (0.67)

 0.5. Size:1184K  cn xch
ss8050l ss8050h ss8050j.pdf

S8050J
S8050J

SS8050 Features Complimentary to SS8550 Collector Current: IC=1.5A SOT-23AMarking Code:Y 1Dim Min MaxCA0.37 0.51B C B1.20 1.40C2.30 2.50TOP VIEWB ED0.89 1.03DEGE0.45 0.60G1.78 2.05H H2.80 3.00 J0.013 0.10KMAXIMUM RATINGS (Ta=25 unless otherwise noted) K0.903 1.10JL0.45 0.61

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

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History: 2SC3264

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