S8550J . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: S8550J
Código: 2TY
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.3 W
Tensión colector-base (Vcb): 40 V
Tensión colector-emisor (Vce): 25 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 150 MHz
Ganancia de corriente contínua (hfe): 300
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de transistor bipolar S8550J
S8550J Datasheet (PDF)
s8550l s8550h s8550j.pdf
RUMW UMW S8550SOT-23 Plastic-Encapsulate TransistorsSOT-23 S8550 TRANSISTOR (PNP) 1. BASE FEATURES 2. EMITTER Complimentary to S8050 3. COLLECTOR Collector current: IC=0.5A MARKING : 2TY MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Volta
s8550l s8550h s8550j.pdf
S8550 TRANSISTOR(PNP) SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features S8050 ; Complementary to S8050 300mW; Power Dissipation of 300mW High Stability and High Reliability Mechanical Data : SOT-23 SOT-23 Small Outline Plastic Package
s8550l s8550h s8550j.pdf
S8550 Features Complimentary to S8050 Collector current: IC=-0.5A SOT-23 AMARKING: 2TYDim Min MaxCA0.37 0.51B C B1.20 1.40C2.30 2.50TOP VIEWB ED0.89 1.03DEGE0.45 0.60G1.78 2.05H H2.80 3.00J0.013 0.10KK0.903 1.10JMAXIMUM RATINGS (Ta=25 unless otherwise noted)L0.45 0.61M
ss8550l ss8550h ss8550j.pdf
RUMW UMW SS8550SOT-23 Plastic-Encapsulate TransistorsSS8550 TRANSISTOR (PNP) SOT-23 FEATURES High Collector Current Complementary to SS8050 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage -40 V CBOV Collector-Emitter Voltage -25 V CEOV Emitter-Base Voltage -5 V EB
ss8550 ss8550l ss8550h ss8550j.pdf
SS8550 SOT-23 PNP Transistors321.BaseFeatures2.EmitterCollector Current: IC=-1.5A1 3.Collector Simplified outline(SOT-23)Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector-Base Voltage VCBO -40 VCollector-Emitter Voltage VCEO -25 VEmitter-Base Voltage VEBO -5 VCollector Current -Continuous IC -1.5 ACollector Power Dissipation PC 0.3 WJunc
ss8550l ss8550h ss8550j.pdf
SS8550 TRANSISTOR (PNP) SOT 23 FEATURES High Collector Current Complementary to SS8050 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER V Collector-Base Voltage -40 V CBO3. COLLECTOR V Collector-Emitter Voltage -25 V CEOV Emitter-Base Voltage -5 V EBOIC Collector Current -1.5 A P Collector Power Diss
ss8550l ss8550h ss8550j.pdf
SS8550 TRANSISTOR(PNP) SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features SS8050 ; Complementary to SS8050 300mW; Power Dissipation of 300mW High Stability and High Reliability Mechanical Data : SOT-23 SOT-23 Small Outline Plastic Package
mmbts8550l mmbts8550h mmbts8550j.pdf
MMBTS8550PNP Silicon Tr ansistors Features Collector current: IC=0.5A SOT23MAXIMUM RATINGS (Ta=25 unless otherwise noted) SymbolParameter Value UnitCollectorBase Voltage -40 VCBO VVCEO -25 VCollectorEmitter Voltage(B)(C)-5 (A)EmitterBase Voltage VEBO VACollector Current Continuous IC-0.50.063 (1.60)0.027 (0.67)0.047 (1.20) 0.013 (0.
ss8550l ss8550h ss8550j.pdf
SS8550 Features Complimentary to SS8050 Collector current: IC= -1.5A SOT-23 AMARKING: Y2Dim Min MaxCA0.37 0.51B C B1.20 1.40C2.30 2.50TOP VIEWB ED0.89 1.03DEGE0.45 0.60G1.78 2.05H H2.80 3.00J0.013 0.10KK0.903 1.10JL0.45 0.61M0.085 0.180MAXIMUM RATINGS (Ta=25 unless othe
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