2SA129 Todos los transistores

 

2SA129 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SA129
   Material: Ge
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.17 W
   Tensión colector-base (Vcb): 40 V
   Tensión emisor-base (Veb): 2 V
   Corriente del colector DC máxima (Ic): 0.5 A
   Temperatura operativa máxima (Tj): 75 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 10 MHz
   Capacitancia de salida (Cc): 20 pF
   Ganancia de corriente contínua (hfe): 60
   Paquete / Cubierta: TO44

 Búsqueda de reemplazo de transistor bipolar 2SA129

 

2SA129 Datasheet (PDF)

 0.1. Size:203K  toshiba
2sa1298.pdf

2SA129
2SA129

2SA1298 TOSHIBA Transistor Silicon PNP Epitaxial (PCT process) 2SA1298 Low Frequency Power Amplifier Application Unit: mm Power Switching Applications High DC current gain: hFE = 100~320 Low saturation voltage: V = -0.4 V (max) CE (sat)(I = -500 mA, I = -20 mA) C B Suitable for driver stage of small motor Complementary to 2SC3265 Small package Max

 0.2. Size:229K  toshiba
2sa1293.pdf

2SA129
2SA129

 0.3. Size:219K  toshiba
2sa1296.pdf

2SA129
2SA129

2SA1296 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1296 Power Amplifier Applications Unit: mm Power Switching Applications Low saturation voltage: VCE (sat) = -0.5 V (max) @I = -2 A C Complementary to 2SC3266. Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO -20 VCollector-emitter voltage VCEO

 0.4. Size:227K  toshiba
2sa1297.pdf

2SA129
2SA129

2SA1297 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1297 Power Amplifier Applications Unit: mm Power Switching Applications Low saturation voltage: VCE (sat) = -0.5 V (max) @I = -2 A C Complementary to 2SC3267. Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO -20 VCollector-emitter voltage VCEO

 0.5. Size:189K  toshiba
2sa1298o 2sa1298y.pdf

2SA129
2SA129

2SA1298 TOSHIBA Transistor Silicon PNP Epitaxial (PCT process) 2SA1298 Low Frequency Power Amplifier Application Unit: mmPower Switching Applications High DC current gain: hFE = 100 to 320 Low saturation voltage: VCE (sat) = -0.4 V (max) (IC = -500 mA, IB = -20 mA) Suitable for driver stage of small motor Complementary to 2SC3265 Small package Absolu

 0.6. Size:40K  sanyo
2sa1291.pdf

2SA129
2SA129

Ordering number:ENN1201DPNP/NPN Epitaxial Planar Silicon Transistors2SA1291/2SC325560V/10A High-Speed Switching ApplicationsApplications Package Dimensions Various inductance lamp drivers for electricalunit:mmequipment.2010C Inverters, converters (strobo, flash, fluorescent lamp[2SA1291/2SC3255]lighting circuit).10.24.5 Power amp (high power car stereo, moto

 0.7. Size:40K  sanyo
2sa1290.pdf

2SA129
2SA129

Ordering number:ENN1200DPNP/NPN Epitaxial Planar Silicon Transistors2SA1290/2SC325460V/7A High-Speed Switching ApplicationsApplications Package Dimensions Various inductance lamp drivers for electricalunit:mmequipment.2010C Inverters, converters (strobo, flash, fluorescent lamp[2SA1290/2SC3254]lighting circuit).10.24.53.65.1 Power amp (high power car ste

 0.8. Size:44K  sanyo
2sa1292.pdf

2SA129
2SA129

Ordering number:ENN2370APNP/NPN Epitaxial Planar Silicon Transistors2SA1292/2SC325660V/15A High-Speed Switching ApplicationsApplications Package Dimensions Various inductance, lamp drivers for electricalunit:mmequipment.2022A Inverters, converters (strobo, flash, fluorescent lamp[2SA1292/2SC3256]lighting circuit).15.63.2 Power amp (high-power care stereo, mo

 0.9. Size:319K  mcc
2sa1298-o.pdf

2SA129
2SA129

MCC2SA1298-OTM Micro Commercial Components20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SA1298-YPhone: (818) 701-4933Fax: (818) 701-4939Features Power switching application Low frequency power amplifier application PNP General Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Purpose Amplifier Lead Free Fin

 0.10. Size:319K  mcc
2sa1298-y.pdf

2SA129
2SA129

MCC2SA1298-OTM Micro Commercial Components20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SA1298-YPhone: (818) 701-4933Fax: (818) 701-4939Features Power switching application Low frequency power amplifier application PNP General Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Purpose Amplifier Lead Free Fin

 0.11. Size:458K  mcc
2sa1298.pdf

2SA129
2SA129

2SA1298Features Power Switching Application Low Frequency Power Amplifier Application Halogen Free. Green Device (Note 1)PNP General Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability RatingPurpose Amplifier Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings @ 25C Unless

 0.12. Size:78K  secos
2sa1298.pdf

2SA129

2SA1298 -0.8A , -35V PNP Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES Low Frequency Power Amplifier Application A Power Switching Applications L33Top View C BCLASSIFICATION OF hFE (1) 11 2Product-Rank 2SA1298-O 2SA1298-Y 2K ERange 100~20

 0.13. Size:103K  secos
2sa1296.pdf

2SA129

2SA1296 -2 A, -20 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES Low Saturation VoltageVCE(sat) High DC Current Gain G HEmitter Collector Base JCLASSIFICATION OF hFE(1) A DProduct-Rank 2SA1296-Y 2SA1296-GR MillimeterREF.B Min. Max.

 0.14. Size:160K  jmnic
2sa1291.pdf

2SA129
2SA129

JMnic Product Specification Silicon PNP Power Transistors 2SA1291 DESCRIPTION With TO-220 package Low collector saturation voltage. Short switching time. Complement to type 2SC3255 APPLICATIONS Various inductance lamp drivers for electrical equipment. Inverters, converters Power amplifier High-speed switching PINNING PIN DESCRIPTION1 Emitter Colle

 0.15. Size:197K  jmnic
2sa1290.pdf

2SA129
2SA129

JMnic Product Specification Silicon PNP Power Transistors 2SA1290 DESCRIPTION With TO-220 package Short switching time Low collector saturation voltage Complement to type 2SC3254 APPLICATIONS Various inductance lamp drivers for electrical equipment Inverters,converters Power amplifier Switching regulator ,driver PINNING PIN DESCRIPTION1 Emitter Co

 0.16. Size:193K  jmnic
2sa1294.pdf

2SA129
2SA129

JMnic Product Specification Silicon PNP Power Transistors 2SA1294 DESCRIPTION With TO-3PN package Complement to type 2SC3263 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol3 EmitterAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UNIT

 0.17. Size:264K  jmnic
2sa1293.pdf

2SA129
2SA129

JMnic Product Specification Silicon PNP Power Transistors 2SA1293 DESCRIPTION With TO-220 package Complement to type 2SC3258 Low collector saturation voltage High speed switching time APPLICATIONS High current switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Bas

 0.18. Size:160K  jmnic
2sa1292.pdf

2SA129
2SA129

JMnic Product Specification Silicon PNP Power Transistors 2SA1292 DESCRIPTION With TO-3PN package Low saturation voltage. Fast switching time. Complement to type 2SC3256 APPLICATIONS Various inductance, lamp drivers for electrical equipment. Inverters, converters Power amplifier High-speed switching PINNING PIN DESCRIPTION1 Base Collector;connecte

 0.19. Size:203K  jmnic
2sa1295.pdf

2SA129
2SA129

JMnic Product Specification Silicon PNP Power Transistors 2SA1295 DESCRIPTION With MT-200 package Complement to type 2SC3264 APPLICATIONS Audio and general purpose applications PINNING (see Fig.2) PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAM

 0.20. Size:28K  sanken-ele
2sa1294.pdf

2SA129

LAPT 2SA1294Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3263)Application : Audio and General Purpose(Ta=25C) Absolute maximum ratings (Ta=25C) Electrical Characteristics External Dimensions MT-100(TO3P)Symbol Ratings Unit Symbol Conditions Ratings Unit0.24.80.415.60.1VCBO 230 V ICBO VCB=230V 100max A 9.6 2.0VCEO 230 V IEBO VEB=

 0.21. Size:28K  sanken-ele
2sa1295.pdf

2SA129

LAPT 2SA1295Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3264)Application : Audio and General(Ta=25C) Absolute maximum ratings (Ta=25C) Electrical Characteristics External Dimensions MT-200Symbol Ratings Unit Symbol Conditions Ratings Unit0.26.00.336.4VCBO 230 V ICBO VCB=230V 100max A0.224.42.1VCEO V IEBO VEB=5V 100max

 0.22. Size:296K  htsemi
2sa1298.pdf

2SA129

2SA1 298TRANSISTOR(PNP)SOT23 FEATURES Low Frequency Power Amplifier Application Power Swithing Applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER V Collector-Base Voltage -35 V CBO3. COLLECTOR V Collector-Emitter Voltage -30 V CEOV Emitter-Base Voltage -5 V EBOI Collector Current -800 mA C

 0.23. Size:1544K  jilin sino
2sc3264 2sa1295.pdf

2SA129
2SA129

Complementary NPN-PNP Power Bipolar Transistor R 2SC3264(NPN) 2SA1295(PNP) APPLICATIONS High fidelity audio amplifier and other linear applications FEATURES V =230V (min) High collector voltageV =230V (min) CEO CEONPN-PNP Complementary NPN-PNP

 0.24. Size:731K  jilin sino
2sa1295 2sc3264.pdf

2SA129
2SA129

Complementary NPN-PNP Power Bipolar Transistor R2SC3264(NPN) 2SA1295(PNP) APPLICATIONS High fidelity audio amplifier and other linear applications FEATURES V =230V (min) High collector voltageV =230V (min) CEO CEO NPN-PNP Complementary NPN-

 0.25. Size:1004K  kexin
2sa1298.pdf

2SA129
2SA129

SMD Type TransistorsPNP Transistors2SA1298SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=-0.8A1 2 Collector Emitter Voltage VCEO=-30V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.1 Low Frequency Power Amplifier Application Power Swithing Applications1.Base Complementary to 2SC32652.Emitter3.collecto

 0.26. Size:194K  cn sptech
2sa1290q 2sa1290r 2sa1290s.pdf

2SA129
2SA129

SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor 2SA1290DESCRIPTIONLow Collector Saturation Voltage-: V = -0.4V(Max.)@I = -3.5ACE(sat) CFast Switching SpeedComplement to Type 2SC3254APPLICATIONSVarious inductance lamp drivers for electrical equipment.Inverters, converters(strobo, flash, fluorescent lamp lightingcircuits).Power amplifier (high p

 0.27. Size:218K  inchange semiconductor
2sa1291.pdf

2SA129
2SA129

isc Silicon PNP Power Transistor 2SA1291DESCRIPTIONLow Collector Saturation Voltage-: V = -0.4V(Max.)@I = -5ACE(sat) CFast Switching SpeedComplement to Type 2SC3255Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSVarious inductance lamp drivers for electrical equipment.Inverters, converters(strobo, flash, fluorescent

 0.28. Size:218K  inchange semiconductor
2sa1290.pdf

2SA129
2SA129

isc Silicon PNP Power Transistor 2SA1290DESCRIPTIONLow Collector Saturation Voltage-: V = -0.4V(Max.)@I = -3.5ACE(sat) CFast Switching SpeedComplement to Type 2SC3254APPLICATIONSVarious inductance lamp drivers for electrical equipment.Inverters, converters(strobo, flash, fluorescent lamp lightingcircuits).Power amplifier (high power car stereo, motor controller

 0.29. Size:219K  inchange semiconductor
2sa1294.pdf

2SA129
2SA129

isc Silicon PNP Power Transistor 2SA1294DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = -230V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC3263Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

 0.30. Size:218K  inchange semiconductor
2sa1293.pdf

2SA129
2SA129

isc Silicon PNP Power Transistor 2SA1293DESCRIPTIONLow Collector Saturation Voltage-: V = -0.4V(Max.)@I = -3ACE(sat) CFast Switching SpeedComplement to Type 2SC3258Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

 0.31. Size:224K  inchange semiconductor
2sa1292.pdf

2SA129
2SA129

isc Silicon PNP Power Transistor 2SA1292DESCRIPTIONLow Collector Saturation Voltage-: V = -0.4V(Max.)@I = -7.5ACE(sat) CFast Switching SpeedComplement to Type 2SC3256Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSVarious inductance lamp drivers for electrical equipment.Inverters,converters(strobo,flash,fluorescent l

 0.32. Size:220K  inchange semiconductor
2sa1295.pdf

2SA129
2SA129

isc Silicon PNP Power Transistor 2SA1295DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = -230V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC3264Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VA

Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , BC327 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

 

 
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