2SD882-E Todos los transistores

 

2SD882-E . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SD882-E
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.5 W
   Tensión colector-base (Vcb): 40 V
   Tensión colector-emisor (Vce): 30 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 3 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 50 MHz
   Ganancia de corriente contínua (hfe): 200
   Paquete / Cubierta: SOT89

 Búsqueda de reemplazo de transistor bipolar 2SD882-E

 

2SD882-E Datasheet (PDF)

 ..1. Size:564K  cn evvo
2sd882-r 2sd882-q 2sd882-p 2sd882-e.pdf

2SD882-E 2SD882-E

D882NPN Transistors Features3 NPN transistor High current output up to 3A2 Low Saturation Voltage Complement to 2SB772 1.Base12.Collector3.Emitter Simplified outline(SOT-89)Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector to Base Voltage VCBO 40 VCollector to Emitter Voltage VCEO 30 VEmitter to Base Voltage VEBO 6 VCollector

 7.1. Size:305K  mcc
2sd882-gr-r-o-y.pdf

2SD882-E 2SD882-E

2SD882-RMCCMicro Commercial ComponentsTM2SD882-O20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SD882-YPhone: (818) 701-49332SD882-GRFax: (818) 701-4939Features Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates NPN SiliconRoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability ratingPlastic-Encapsulat

 7.2. Size:52K  kexin
2sd882-252.pdf

2SD882-E

TransistorsSMD Type TransistorsNPN Silicon Power Transistor2SD882TO-252 Features Unit: mm6.50+0.15 2.30+0.1-0.15 -0.1 Collector Power Dissipation: PC=1.25W+0.85.30+0.2 0.50-0.7-0.2 Collector Current: IC=3A0.1270.80+0.1 max-0.121 32.3 0.60+0.1-0.11 Base+0.154.60-0.152 Collector3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating

 7.3. Size:5243K  msksemi
2sd882-ms.pdf

2SD882-E 2SD882-E

www.msksemi.com2SD882-MSSemiconductor CompianceSemiconductor Compiance1. BASE TRANSISTOR (NPN) 2. COLLETOR FEATURES Power dissipation 3. EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 3 A PC C

Otros transistores... MMBT5551Q , MMBTA06Q , S8050-H , S8050-L , S9013L , S9015H , S9015L , 2SA812H , BC549 , 2SC1623-L4 , 2SC2412Q , 2SC2412R , 2SC2412S , 2SC3356-SC1-R-R , 2SC3356-SD3-R-R , 2SC3356-SF3-R-R , 2SC3356-T93-R-K .

 

 
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