2SA1302R . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SA1302R
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 150 W
Tensión colector-base (Vcb): 200 V
Tensión colector-emisor (Vce): 200 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 15 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 30 MHz
Capacitancia de salida (Cc): 470 pF
Ganancia de corriente contínua (hfe): 55
Paquete / Cubierta: TO3PL
Búsqueda de reemplazo de transistor bipolar 2SA1302R
2SA1302R Datasheet (PDF)
2sa1302.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1302 DESCRIPTION With TO-3PL package Complement to type 2SC3281 APPLICATIONS Power amplifier applications Recommended for 100W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PL) and symbol
2sa1302.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA1302 DESCRIPTION High Current Capability High Power Dissipation High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -200V(Min) Complement to Type 2SC3281 APPLICATIONS Power amplifier applications Recommend for 100W high fidelity audio frequency amplifier output stage applica
Otros transistores... 2SA1300BL , 2SA1300G , 2SA1300Y , 2SA1301 , 2SA1301O , 2SA1301R , 2SA1302 , 2SA1302O , BC558 , 2SA1303 , 2SA1303O , 2SA1303P , 2SA1303Y , 2SA1304 , 2SA1305 , 2SA1306 , 2SA1306A .
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Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050