2SA1303O Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SA1303O
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 125 W
Tensión colector-base (Vcb): 150 V
Tensión colector-emisor (Vce): 150 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 14 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 50 MHz
Capacitancia de salida (Cc): 400 pF
Ganancia de corriente contínua (hFE): 50
Encapsulados: TO3P
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2SA1303O datasheet
2sa1303.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1303 DESCRIPTION With TO-3PN package Complement to type 2SC3284 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT
2sa1303.pdf
LAPT 2SA1303 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3284) Application Audio and General Purpose (Ta=25 C) External Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25 C) Electrical Characteristics Symbol Ratings Unit Symbol Conditions Ratings Unit 0.2 4.8 0.4 15.6 0.1 9.6 2.0 VCBO 150 V ICBO VCB= 150V 100max A VCEO 150 V IEBO VEB
2sa1303.pdf
isc Silicon PNP Power Transistor 2SA1303 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -150V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC3284 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL
Otros transistores... 2SA1300Y , 2SA1301 , 2SA1301O , 2SA1301R , 2SA1302 , 2SA1302O , 2SA1302R , 2SA1303 , 2SD313 , 2SA1303P , 2SA1303Y , 2SA1304 , 2SA1305 , 2SA1306 , 2SA1306A , 2SA1306AO , 2SA1306AY .
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