2SA1318T . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SA1318 -0.2 A, -60 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES Large Current Capacity and Wide ASO G HAPPLICATIONS Emitter Capable of Being Used in The Low Frequency to High Collector Base Frequency Range JA DMillimeterREF.CLASSIF

2SA1314 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1314 Strobe Flash Applications Unit: mm Audio Power Applications High DC current gain and excellent linearity : h = 140 to 600 (V = -1 V, I = -0.5 A) FE (1) CE C: h = 60 (min), 120 (typ.), (V = 1 V, I = -4 A) FE (2) CE C Low saturation voltage : V = -0.5 V (max) (I = -2 A, I = -50 mA) CE

2SA1316 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1316 For Low Noise Audio Amplifier Applications and Unit: mm Recommended for the First Stages of MC Head Amplifiers Very low noise in the region of low signal source impedance equivalent input noise voltage: En = 0.6 nV/Hz1/2 (typ.) Low pulse noise. Low 1/f noise Low base spreading resistance

2SA1312 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1312 Audio Frequency Low Noise Amplifier Applications Unit: mm High voltage: VCEO = -120 V Excellent hFE linearity: hFE (IC = -0.1 mA)/ hFE (IC = -2 mA) h= 0.95 (typ.) High hFE: hFE = 200~700 Low noise: NF (2) = 0.2dB (typ.), 3dB (max) at f = 1 kHz Complementary to 2SC3324 Small

2SA1313 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1313 Audio Frequency Low Power Amplifier Applications Unit: mmDriver Stage Amplifier Applications Switching Applications Excellent hFE linearity: hFE (2) = 25 (min) at VCE = -6 V, IC = -400 mA High voltage: VCEO = -50 V (min) Complementary to 2SC3325 Small package Absolute Maximum Rat

2SA1312 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1312 Audio Frequency Low Noise Amplifier Applications Unit: mm High voltage: VCEO = -120 V Excellent hFE linearity: hFE (IC = -0.1 mA)/ hFE (IC = -2 mA) h= 0.95 (typ.) High hFE: hFE = 200 to 700 Low noise: NF (2) = 0.2dB (typ.), 3dB (max) at f = 1 kHz Complementary to 2SC3324 Sm

Ordering number:EN1334CPNP/NPN Epitaxial Planar Silicon Transistors2SA1319/2SC3332High-Voltage Switching ApplicationsFeatures Package Dimensions Hgih breakdown voltage.unit:mm Excellent hFE linearity.2003A Wide ASO and highly resistant to breakdown.[2SA1319/2SC3332] Adoption of MBIT process.Switching Test CircuitJEDEC : TO-92 B : Base(For PNP, the polarit

Transistor2SA1310Silicon PNP epitaxial planer typeFor low-frequency and low-noise amplificationUnit: mmComplementary to 2SC33124.0 0.2FeaturesAllowing supply with the radial taping.Low noise voltage NV.High foward current transfer ratio hFE.Optimum for high-density mounting.markingAbsolute Maximum Ratings (Ta=25C)1 2 3Parameter Symbol Ratings UnitCollector to

Transistor2SA1310Silicon PNP epitaxial planer typeFor low-frequency and low-noise amplificationUnit: mmComplementary to 2SC33124.0 0.2FeaturesAllowing supply with the radial taping.Low noise voltage NV.High foward current transfer ratio hFE.Optimum for high-density mounting.markingAbsolute Maximum Ratings (Ta=25C)1 2 3Parameter Symbol Ratings UnitCollector to

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate TransistorsSOT-23 2SA1313 TRANSISTOR (PNP)FEATURES Excellent hFE Linearity: hFE(2) =25(Min)at VCE =-6V,IC=- 400mA. High Voltage :VCEO=-50V(Min)1. BASE Complements to the 2SC3325.2. EMITTER3. COLLECTORMARKING : ACO,ACY MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Valu

2SA1313 SOT-23-3L Transistor(PNP)SOT-23-3L1. BASE 2. EMITTER 2.923. COLLECTOR 0.351.17Features Excellent hFE Linearity 2.80 1.60: hFE(2) =25(Min)at VCE =-6V,IC=- 400mA. High Voltage :VCEO=-50V(Min) 0.15 Complements the 2SC3325. 1.90MARKING : ACO,ACY Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter

SMD Type TransistorsPNP Transistors 2SA1314Features1.70 0.1Low Saturation Voltage: VCE(sat) = -0.5V (max) (IC = -2A, IB = -50mA)Small Flat Package0.42 0.10.46 0.1Complementary to 2SC29821.Base2.Collector3.EmitterAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -20 Collector - Emitter Voltage VCEO -10 V Emitter - Base

SMD Type TransistorsPNP Transistors2SA1312SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=-100mA1 2 Collector Emitter Voltage VCEO=-120V+0.050.95+0.1-0.1 0.1 -0.011.9+0.1 Complementary to 2SC3324 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collecto

SMD Type orSMD Type TransistICsPNP Transistors2SA1313SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13FeaturesHigh voltage: VCEO = -50 V (min)1 2Small package+0.1+0.050.95-0.1 0.1-0.01 Complementary to 2SC3325 +0.11.9-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -50 VCollector-e