2SA1325 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SA1325
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 2
W
Tensión colector-base (Vcb): 120
V
Corriente del colector DC máxima (Ic): 1.1
A
Temperatura operativa máxima (Tj): 125
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 100
MHz
Ganancia de corriente contínua (hfe): 60
Paquete / Cubierta:
TO39
Búsqueda de reemplazo de 2SA1325
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Selección ⓘ de transistores por parámetros
2SA1325 datasheet
8.1. Size:130K toshiba
2sa1329.pdf 

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer ... See More ⇒
8.4. Size:128K toshiba
2sa1328.pdf 

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer ... See More ⇒
8.5. Size:287K toshiba
2sa1320.pdf 

2SA1320 TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process) 2SA1320 High Voltage Switching Applications Unit mm Color TV Chroma Output Applications High voltage VCEO = -250 V Low C 1.8 pF (max) re Complementary to 2SC3333 Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO -250 V Collector-emi... See More ⇒
8.6. Size:48K panasonic
2sa1323 e.pdf 

Transistor 2SA1323 Silicon PNP epitaxial planer type For high-frequency amplification Unit mm Complementary to 2SC3314 4.0 0.2 Features Allowing supply with the radial taping. High transition frequency fT. Optimum for high-density mounting. Absolute Maximum Ratings (Ta=25 C) marking 1 2 3 Parameter Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitte... See More ⇒
8.7. Size:44K panasonic
2sa1323.pdf 

Transistor 2SA1323 Silicon PNP epitaxial planer type For high-frequency amplification Unit mm Complementary to 2SC3314 4.0 0.2 Features Allowing supply with the radial taping. High transition frequency fT. Optimum for high-density mounting. Absolute Maximum Ratings (Ta=25 C) marking 1 2 3 Parameter Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitte... See More ⇒
8.8. Size:209K jmnic
2sa1329.pdf 

JMnic Product Specification Silicon PNP Power Transistors 2SA1329 DESCRIPTION With TO-220 package Complement to type 2SC3346 Low collector saturation voltage High speed switching time APPLICATIONS High current switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Bas... See More ⇒
8.9. Size:202K jmnic
2sa1327.pdf 

JMnic Product Specification Silicon PNP Power Transistors 2SA1327 DESCRIPTION With TO-220Fa package Low collector saturation voltage High current capacity APPLICATIONS Strobe flash applications Audio power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT ... See More ⇒
8.10. Size:208K jmnic
2sa1328.pdf 

JMnic Product Specification Silicon PNP Power Transistors 2SA1328 DESCRIPTION With TO-220 package Complement to type 2SC3345 Low collector saturation voltage High speed switching time APPLICATIONS High current switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Bas... See More ⇒
8.11. Size:216K inchange semiconductor
2sa1329.pdf 

isc Silicon PNP Power Transistor 2SA1329 DESCRIPTION Low Collector Saturation Voltage V = -0.4(V)(Max)@I = -6A CE(sat) C High Switching Speed Complement to Type 2SC3346 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALU... See More ⇒
8.12. Size:218K inchange semiconductor
2sa1327.pdf 

isc Silicon PNP Power Transistor 2SA1327 DESCRIPTION Low Collector Saturation Voltage- V = -0.5V(Max.)@I = -8A CE(sat) C High DC Current Gain- hFE= 70(Min.)@ I = -8A C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Strobe flash applications. Audio power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB... See More ⇒
8.13. Size:215K inchange semiconductor
2sa1328.pdf 

isc Silicon PNP Power Transistor 2SA1328 DESCRIPTION Low Collector Saturation Voltage V = -0.4(V)(Max)@I = -6A CE(sat) C High Switching Speed Complement to Type 2SC3345 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALU... See More ⇒
Otros transistores... 2SA1319T
, 2SA1319U
, 2SA132
, 2SA1320
, 2SA1321
, 2SA1322
, 2SA1323
, 2SA1324
, TIP41
, 2SA1326
, 2SA1327
, 2SA1327O
, 2SA1327Y
, 2SA1328
, 2SA1328O
, 2SA1328Y
, 2SA1329
.