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2SA1329O . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SA1329O
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 40 W
   Tensión colector-base (Vcb): 80 V
   Tensión colector-emisor (Vce): 80 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 12 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 50 MHz
   Ganancia de corriente contínua (hfe): 70
   Paquete / Cubierta: TO220
 

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2SA1329O Datasheet (PDF)

 7.1. Size:130K  toshiba
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2SA1329O

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 7.2. Size:209K  jmnic
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2SA1329O

JMnic Product Specification Silicon PNP Power Transistors 2SA1329 DESCRIPTION With TO-220 package Complement to type 2SC3346 Low collector saturation voltage High speed switching time APPLICATIONS High current switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Bas

 7.3. Size:216K  inchange semiconductor
 2sa1329.pdf pdf_icon

2SA1329O

isc Silicon PNP Power Transistor 2SA1329DESCRIPTIONLow Collector Saturation Voltage:V = -0.4(V)(Max)@I = -6ACE(sat) CHigh Switching SpeedComplement to Type 2SC3346Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU

MOSTRAR MÁS

Otros transistores... 2SA1326 , 2SA1327 , 2SA1327O , 2SA1327Y , 2SA1328 , 2SA1328O , 2SA1328Y , 2SA1329 , 13009 , 2SA1329Y , 2SA133 , 2SA1330 , 2SA1331 , 2SA1331O4 , 2SA1331O5 , 2SA1331O6 , 2SA1332 .

 

 
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