2SA1329O Todos los transistores

 

2SA1329O Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SA1329O

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 40 W

Tensión colector-base (Vcb): 80 V

Tensión colector-emisor (Vce): 80 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 12 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 50 MHz

Ganancia de corriente contínua (hFE): 70

Encapsulados: TO220

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2SA1329O datasheet

 7.1. Size:130K  toshiba
 2sa1329.pdf pdf_icon

2SA1329O

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 7.2. Size:209K  jmnic
 2sa1329.pdf pdf_icon

2SA1329O

JMnic Product Specification Silicon PNP Power Transistors 2SA1329 DESCRIPTION With TO-220 package Complement to type 2SC3346 Low collector saturation voltage High speed switching time APPLICATIONS High current switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Bas

 7.3. Size:216K  inchange semiconductor
 2sa1329.pdf pdf_icon

2SA1329O

isc Silicon PNP Power Transistor 2SA1329 DESCRIPTION Low Collector Saturation Voltage V = -0.4(V)(Max)@I = -6A CE(sat) C High Switching Speed Complement to Type 2SC3346 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALU

MOSTRAR MÁS

Otros transistores... 2SA1326 , 2SA1327 , 2SA1327O , 2SA1327Y , 2SA1328 , 2SA1328O , 2SA1328Y , 2SA1329 , TIP3055 , 2SA1329Y , 2SA133 , 2SA1330 , 2SA1331 , 2SA1331O4 , 2SA1331O5 , 2SA1331O6 , 2SA1332 .

History: LMBT6517LT1G | 2SB1195 | 2SC3196 | 2SC319 | LMBT2222ADW1T1G | ZT2368

 

 

 

 

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