2SA1356Y. Equivalente. Reemplazo. Todos los transistores. Hoja de especificaciones. Principales características

2SA1356Y Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SA1356Y

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 5 W

Tensión colector-base (Vcb): 40 V

Tensión colector-emisor (Vce): 40 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.8 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 110 MHz

Capacitancia de salida (Cc): 20 pF

Ganancia de corriente contínua (hFE): 120

Encapsulados: TO126

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2SA1356Y datasheet

7.1. Size:177K toshiba
2sa1356.pdf pdf_icon

8.1. Size:179K toshiba
2sa1359.pdf pdf_icon

8.2. Size:176K toshiba
2sa1357.pdf pdf_icon

8.3. Size:178K toshiba
2sa1358.pdf pdf_icon

8.4. Size:150K sanyo
2sa1353 2sc3417.pdf pdf_icon

Ordering number EN1390D PNP/NPN Epitaxial Planar Silicon Transistors 2SA1353/2SC3417 Ultrahigh-Definition CRT Display Video Output Applications Applications Package Dimensions Ultrahigh-definition CRT display. unit mm Color TV chroma output, high-voltage driver appli- 2009B cations. [2SA1353/2SC3417] Features High breakdown voltage VCEO 300V. Excellent high fr

8.5. Size:149K sanyo
2sa1352 2sc3416.pdf pdf_icon

Ordering number EN1411C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1352/2SC3416 Ultrahigh-Definition CRT Display Video Output Applications Applications Package Dimensions Color TV chroma output, high-voltage driver unit mm applicatons. 2009B [2SA1352/2SC3416] Features High breakdown voltage VCEO 200V. Small reverse transfer capacitance and excellent high freq

8.6. Size:24K hitachi
2sa1350.pdf pdf_icon

2SA1350 Silicon PNP Epitaxial Application Low frequency low noise amplifier HF amplefier Outline SPAK 1. Emitter 1 2 2. Collector 3 3. Base 2SA1350 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 40 V Collector to emitter voltage VCEO 30 V Emitter to base voltage VEBO 5 V Collector current IC 100 mA Collector

8.7. Size:148K jmnic
2sa1355.pdf pdf_icon

JMnic Product Specification Silicon PNP Power Transistors 2SA1355 DESCRIPTION With TO-220 package Low collector saturation voltage. Short switching time. APPLICATIONS Various inductance lamp drivers for electrical equipment. Inverters, converters Power amplifier High-speed switching PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mountin

8.8. Size:200K jmnic
2sa1359.pdf pdf_icon

JMnic Product Specification Silicon PNP Power Transistors 2SA1359 DESCRIPTION With TO-126 package Complement to type 2SC3422 Good linearity of hFE APPLICATIONS Audio frequency amplifier Low speed switching Suitable for output stage of 5W car radio and car stereo PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolu

8.9. Size:251K lzg
2sa1357 3ca1357.pdf pdf_icon

2SA1357(3CA1357) PNP /SILICON PNP TRANSISTOR , Purpose Strobe flash applications, audio power amplifier applications. I V C CE(sat) Features High I ,low V . C CE(sat) /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -35 V CBO

8.10. Size:249K lzg
2sa1359 3ca1359.pdf pdf_icon

8.11. Size:213K inchange semiconductor
2sa1352.pdf pdf_icon

isc Silicon PNP Power Transistor 2SA1352 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -200V (Min) (BR)CEO Complement to Type 2SC3416 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV chroma output, high-voltage driver applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT

8.12. Size:190K inchange semiconductor
2sa1355.pdf pdf_icon

isc Silicon PNP Power Transistor 2SA1355 DESCRIPTION TO-220 package High DC Current Gain Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS This type of power transistor is developed for high-speed switching and features a high h at low V ,which is FE CE(sat) ideal for use as a driver in DC/DC converters an

8.13. Size:222K inchange semiconductor
2sa1358-z.pdf pdf_icon

isc Silicon PNP Power Transistor 2SA1358-Z DESCRIPTION With TO-252(DPAK) packaging Excellent linearity of h FE Low collector-to-emitter saturation voltage Fast switching speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB

8.14. Size:196K inchange semiconductor
2sa1359.pdf pdf_icon

isc Silicon PNP Power Transistor 2SA1359 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -40V (Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC3422 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25

8.15. Size:211K inchange semiconductor
2sa1357.pdf pdf_icon

isc Silicon PNP Power Transistor 2SA1357 DESCRIPTION High Collector Current-I = -5.0A C DC Current Gain- h = 70(Min)@I = -4A FE C Low Saturation Voltage V = -1.0V(Max)@I = -4A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Strobe flash applications. Audio power amplifier applications. ABSOLUTE MAXIMUM RATI

8.16. Size:196K inchange semiconductor
2sa1358.pdf pdf_icon

isc Silicon PNP Power Transistor 2SA1358 DESCRIPTION High Collector-Emitter Breakdown Voltage V = -120V(Min) (BR)CEO Complement to Type 2SC3421 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collecto

Otros transistores... 2SA1353C , 2SA1353D , 2SA1353E , 2SA1353F , 2SA1354 , 2SA1355 , 2SA1356 , 2SA1356O , BC549 , 2SA1357 , 2SA1357O , 2SA1357Y , 2SA1358 , 2SA1358O , 2SA1358Y , 2SA1359 , 2SA1359O .