2SA1366 Todos los transistores

 ..1. Size:495K  no
 2n3904 2n3906 2n5401 2n5551 2sa1271 2sa1273 2sa1275 2sa1276 2sa1366 2sa1657 2sa1658 2sb1366 2sb988 2sc3190 2sc3191 2sc3192.pdf

 ..2. Size:649K  kexin
 2sa1366.pdf

SMD Type Transistors PNP Transistors 2SA1366 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=-400mA Collector Emitter Voltage VCEO=-50V 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 Complementary to 2SC3441 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collecto

 8.1. Size:186K  toshiba
 2sa1362.pdf

2SA1362 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1362 Low Frequency Power Amplifier Applications Unit mm Power Switching Applications High DC current gain hFE = 120 400 Low saturation voltage VCE (sat) = -0.2 V (max) (IC = -400 mA, IB = -8 mA) Suitable for driver stage of small motor Small package Absolute Maximum Ratings (Ta = 25

 8.2. Size:130K  toshiba
 2sa1360.pdf

2SA1360 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1360 Audio Frequency Amplifier Applications Unit mm Complementary to 2SC3423 Small collector output capacitance Cob = 2.5 pF (typ.) High transition frequency fT = 200 MHz (typ.) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -150 V Colle

 8.3. Size:185K  toshiba
 2sa1362y 2sa1362gr.pdf

2SA1362 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1362 Low Frequency Power Amplifier Applications Unit mm Power Switching Applications High DC current gain hFE = 120 to 400 Low saturation voltage VCE (sat) = -0.2 V (max) (IC = -400 mA, IB = -8 mA) Suitable for driver stage of small motor Small package Absolute Maximum Ratings (Ta = 2

 8.4. Size:31K  toshiba
 2sa1361.pdf

 8.5. Size:62K  nec
 2sa1367 2sa1376a.pdf

 8.6. Size:71K  isahaya
 2sa1364.pdf

 8.7. Size:69K  isahaya
 2sa1368.pdf

 8.8. Size:125K  isahaya
 2sa1365.pdf

ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with

 8.9. Size:148K  isahaya
 2sa1369.pdf

ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble

 8.10. Size:109K  jmnic
 2sa1360.pdf

Product Specification www.jmnic.com Silicon PNP Power Transistors 2SA1360 DESCRIPTION With TO-126 package Complement to type 2SC3423 High transition frequency APPLICATIONS Audio frequency amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VAL

 8.11. Size:1081K  lrc
 l2sa1365flt1g.pdf

LESHAN RADIO COMPANY, LTD. General Purpose Transistor DESCRIPTION L2SA1365*LT1G is a mini package silicon PNP epitaxial transistor, L2SA1365*LT1G designed with high collector current and small VCE(sat). . S-L2SA1365*LT1G FEATURE Small collector to emitter saturation voltage. VCE(sat)=-0.2V typ 3 Excellent linearity of DC forward current gain. Super mini package

 8.12. Size:928K  kexin
 2sa1362.pdf

SMD Type or SMD Type TransistICs PNP Transistors 2SA1362 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Suitable for driver stage of small motor. Small package. 1 2 +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -15 V Collector-emitter voltage VCEO

 8.13. Size:1228K  kexin
 2sa1364.pdf

SMD Type Transistors PNP Transistors 2SA1364 1.70 0.1 Features High Voltage VCEO = -60V High Collector Current (IC = -1A) High Collector Dissipation PC = 500mW 0.42 0.1 Small Package For Mounting 0.46 0.1 Complementary to 2SC3444 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -60 V Collector-Emitter Voltag

 8.14. Size:1243K  kexin
 2sa1363.pdf

SMD Type Transistors PNP Transistors 2SA1363 Features 1.70 0.1 High hFE hFE = 150 to 800 High Collector Current (IC = -2A) High Collector Dissipation PC = 500mW Small Package For Mounting 0.42 0.1 0.46 0.1 Complementary to 2SC3443 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -20 V Collector-Emitter Vo

 8.15. Size:1225K  kexin
 2sa1368.pdf

SMD Type Transistors PNP Transistors 2SA1368 Features 1.70 0.1 High Voltage VCEO = -100V High Collector Current (ICM = -800mA) High Collector Dissipation PC = 500mW Small Package For Mounting 0.42 0.1 0.46 0.1 Complementary to 2SC3438 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -100 V Collector-Emitter

 8.16. Size:784K  kexin
 2sa1365.pdf

SMD Type or SMD Type TransistICs PNP Transistors 2SA1365 SOT-23 Unit mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 Features Low collector to emitter saturation voltage. Excellent linearity nof DC forward current gain. 1 2 +0.1 +0.05 0.95 -0.1 Super mini package for easy mounting. 0.1-0.01 +0.1 1.9 -0.1 High collector current. High gain band width product. 1.Base Complementary t

 8.17. Size:1243K  kexin
 2sa1369.pdf

SMD Type Transistors PNP Transistors 2SA1369 1.70 0.1 Features High Collector Current (ICM = -3A, IC = -1.5A) High Collector Dissipation PC = 500mW Small Package For Mounting 0.42 0.1 0.46 0.1 Complementary to 2SC3439 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -30 V Collector-Emitter Voltage VCEO -20 V

 8.18. Size:589K  cn shikues
 2sa1362y 2sa1362g.pdf

 8.19. Size:216K  inchange semiconductor
 2sa1360.pdf

isc Silicon PNP Power Transistor 2SA1360 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -150V (Min) (BR)CEO Complement to Type 2SC3423 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-Base Volta