2SA1380D Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SA1380D
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1 W
Tensión colector-base (Vcb): 200 V
Tensión colector-emisor (Vce): 200 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 150 MHz
Ganancia de corriente contínua (hFE): 60
Encapsulados: TO126
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2SA1380D datasheet
7.1. Size:156K sanyo
2sa1380.pdf 
Ordering number EN1425C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1380/2SC3502 Ultrahigh-Definition CRT Display, Video Output Applications Features Package Dimensions High breakdown voltage VCEO 200V. unit mm Small reverse transfer capacitance and excellent 2009B high-frequnecy characteristics [2SA1380/2SC3502] Cre=1.2pF (NPN), 1.7pF (PNP), VCB=30V. Adoptio
8.2. Size:307K toshiba
2sa1384.pdf
2SA1384 TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process) 2SA1384 HIGH Voltage Control Applications Unit mm Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications High voltage VCBO = -300 V, V = -300 V CEO Low saturation voltage V = -0.5 V (max) CE (sat) Small collector output capacitance C = 6 pF (typ
8.4. Size:158K sanyo
2sa1381 2sc3503.pdf
Ordering number EN1426B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1381/2SC3503 High-Definition CRT Display, Video Output Applications Features Package Dimensions High breakdown voltage VCEO 300V. unit mm Small reverse transfer capacitance and excellent high 2009A frequency characteristic [2SA1381/2SC3503] Cre=1.8 pF (NPN), 2.3pF (PNP), VCB=30V. Adoption of
8.5. Size:157K fairchild semi
ksa1381 2sa1381.pdf
March 2008 2SA1381/KSA1381 PNP Epitaxial Silicon Transistor Applications Audio, Voltage Amplifier and Current Source CRT Display, Video Output General Purpose Amplifier Features High Voltage VCEO= -300V Low Reverse Transfer Capacitance Cre= 2.3pF at VCB = -30V TO-126 1 Excellent Gain Linearity for low THD 1. Emitter 2.Collector 3.Base High Frequenc
8.9. Size:155K jmnic
2sa1383.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1383 DESCRIPTION With TO-220 package Complement to type 2SC3514 High transition frequency APPLICATIONS Designed for use in audio frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base Abs
8.10. Size:216K jmnic
2sa1388.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1388 DESCRIPTION With TO-220Fa package Low collector saturation voltage High speed switching time Complementary to 2SC3540 APPLICATIONS High current switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNI
8.11. Size:160K jmnic
2sa1389.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1389 DESCRIPTION With MT-200 package Fast switching speed Excellent safe operating area APPLICATIONS High frequency power amplifiers Audio power amplifiers Switching regulators DC-DC converters PINNING(see Fig.2) PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplifi
8.12. Size:206K jmnic
2sa1387.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1387 DESCRIPTION With TO-220Fa package Low collector saturation voltage High speed switching time High DC current gain APPLICATIONS High current switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT V
8.13. Size:183K jmnic
2sa1386 2sa1386a.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1386 2SA1386A DESCRIPTION With TO-3PN package Complement to type 2SC3519/3519A APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITI
8.14. Size:28K sanken-ele
2sa1386.pdf
LAPT 2SA1386/1386A Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3519/A) Application Audio and General Purpose External Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Ratings Ratings Symbol Unit Symbol Conditions Unit 0.2 4.8 0.4 15.6 2SA1386 2SA1386A 2SA1386 2SA1386A 0.1 9.6 2.0 VCBO 160 180 V 1
8.15. Size:213K nell
2sa1386b.pdf
RoHS 2SA1386B Series RoHS SEMICONDUCTOR Nell High Power Products Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3519B) -15A/-160V,-180V/130W 15.6 0.4 4.8 0.2 9.6 2.0 0.1 3.2 0,1 TO-3P(B) 2 3 +0.2 +0.2 0.65 1.05 -0.1 -0.1 FEATURES 5.45 0.1 5.45 0.1 1.4 Recommend for 105W high Fiderity audio frequency B C E amplifier output stage C Complem
8.16. Size:213K nell
2sa1386b-a.pdf
RoHS 2SA1386B Series RoHS SEMICONDUCTOR Nell High Power Products Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3519B) -15A/-160V,-180V/130W 15.6 0.4 4.8 0.2 9.6 2.0 0.1 3.2 0,1 TO-3P(B) 2 3 +0.2 +0.2 0.65 1.05 -0.1 -0.1 FEATURES 5.45 0.1 5.45 0.1 1.4 Recommend for 105W high Fiderity audio frequency B C E amplifier output stage C Complem
8.17. Size:1535K kexin
2sa1385-z.pdf
SMD Type Transistors PNP Transistors 2SA1385-Z TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Features Low VCE(sat) VCE(sat)=-0.18 V TYP. Complement to 2SC3518-Z 0.127 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4.60 -0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base volta
8.18. Size:1306K kexin
2sa1384.pdf
SMD Type Transistors PNP Transistors 2SA1384 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=-0.1A Collector Emitter Voltage VCEO=-300V Complementary to 2SC3515 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -300 Collector - Emitter Voltage V
8.19. Size:195K inchange semiconductor
2sa1383.pdf
isc Silicon PNP Power Transistor 2SA1383 DESCRIPTION TO-220 package High Collector-Emitter Breakdown Voltage Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Adudio frequency power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -180 V CBO V Collecto
8.20. Size:217K inchange semiconductor
2sa1388.pdf
isc Silicon PNP Power Transistor 2SA1388 DESCRIPTION Low Collector Saturation Voltage- V = -0.4V(Max)@ I = -3A CE(sat) C High Switching Speed Complement to Type 2SC3540 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL
8.21. Size:218K inchange semiconductor
2sa1389.pdf
isc Silicon PNP Power Transistor 2SA1389 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -160V(Min) (BR)CEO High Speed Switching Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High frequency power amplifiers Audio power amplifiers Switching regulators DC-DC converters ABSOLUTE MAXIMUM
8.23. Size:220K inchange semiconductor
2sa1386.pdf
isc Silicon PNP Power Transistor 2SA1386 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -160V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC3519 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT
8.24. Size:146K inchange semiconductor
2sa1386 a.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2SA1386/A DESCRIPTION Collector-Emitter Breakdown Voltage- V(BR)CEO= -160V(Min)-2SA1386 = -180V(Min)-2SA1386A Good Linearity of hFE Complement to Type 2SC3519/A APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALU
8.25. Size:221K inchange semiconductor
2sa1386 2sa1386a.pdf
isc Silicon PNP Power Transistors 2SA1386/A DESCRIPTION Collector-Emitter Breakdown Voltage- V = -160V(Min)-2SA1386 (BR)CEO = -180V(Min)-2SA1386A Good Linearity of h FE Complement to Type 2SC3519/A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =
Otros transistores... 2SA1375
, 2SA1376
, 2SA1377
, 2SA1378
, 2SA1379
, 2SA138
, 2SA1380
, 2SA1380C
, BD140
, 2SA1380E
, 2SA1380F
, 2SA1381
, 2SA1381C
, 2SA1381D
, 2SA1381E
, 2SA1381F
, 2SA1382
.
History: 2SA1431
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