2SA1386AY . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SA1386AY
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 130 W
Tensión colector-base (Vcb): 180 V
Tensión colector-emisor (Vce): 180 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 15 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 40 MHz
Capacitancia de salida (Cc): 500 pF
Ganancia de corriente contínua (hfe): 90
Paquete / Cubierta: TO3P
Búsqueda de reemplazo de transistor bipolar 2SA1386AY
2SA1386AY Datasheet (PDF)
2sa1386 2sa1386a.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1386 2SA1386A DESCRIPTION With TO-3PN package Complement to type 2SC3519/3519A APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITI
2sa1386 2sa1386a.pdf
isc Silicon PNP Power Transistors 2SA1386/ADESCRIPTIONCollector-Emitter Breakdown Voltage-V = -160V(Min)-2SA1386(BR)CEO= -180V(Min)-2SA1386AGood Linearity of hFEComplement to Type 2SC3519/AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =
2sa1386.pdf
LAPT 2SA1386/1386ASilicon PNP Epitaxial Planar Transistor (Complement to type 2SC3519/A)Application : Audio and General PurposeExternal Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Ratings RatingsSymbol Unit Symbol Conditions Unit0.24.80.415.62SA1386 2SA1386A 2SA1386 2SA1386A0.19.6 2.0VCBO 160 180 V 1
2sa1386b.pdf
RoHS 2SA1386B Series RoHS SEMICONDUCTORNell High Power ProductsSilicon PNP Epitaxial Planar Transistor(Complement to type 2SC3519B)-15A/-160V,-180V/130W15.60.44.80.29.62.00.13.20,1TO-3P(B)23+0.2+0.20.651.05-0.1-0.1FEATURES5.450.1 5.450.11.4 Recommend for 105W high Fiderity audio frequency B C E amplifier output stageC Complem
2sa1386b-a.pdf
RoHS 2SA1386B Series RoHS SEMICONDUCTORNell High Power ProductsSilicon PNP Epitaxial Planar Transistor(Complement to type 2SC3519B)-15A/-160V,-180V/130W15.60.44.80.29.62.00.13.20,1TO-3P(B)23+0.2+0.20.651.05-0.1-0.1FEATURES5.450.1 5.450.11.4 Recommend for 105W high Fiderity audio frequency B C E amplifier output stageC Complem
2sa1386.pdf
isc Silicon PNP Power Transistor 2SA1386DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = -160V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC3519Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT
2sa1386 a.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2SA1386/A DESCRIPTION Collector-Emitter Breakdown Voltage- V(BR)CEO= -160V(Min)-2SA1386 = -180V(Min)-2SA1386A Good Linearity of hFE Complement to Type 2SC3519/A APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALU
Otros transistores... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050