2SA1408 Todos los transistores

 ..1. Size:206K  toshiba
 2sa1408.pdf

 8.1. Size:108K  sanyo
 2sa1407 2sc3601.pdf

Ordering number EN1766C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1407/2SC3601 Ultrahigh-Definition CRT Display Video Output Applications Applications Package Dimensions Ultrahigh-definition CRT display. unit mm Video output. 2009B Color TV chroma output. [2SA1407/2SC3601] Wide-band amp. Features High fT fT typ=400MHz. High breakdown voltage VCEO

 8.2. Size:124K  sanyo
 2sa1405 2sc3599.pdf

Ordering number EN1764B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1405/2SC3599 Ultrahigh-Difinition CRT Display Video Output Applications Applications Package Dimensions Ultrahigh-definition CRT display. unit mm Video output. 2009B Color TV chroma output. [2SA1405/2SC3599] Wide-band amp. Features High fT fT typ=500MHz. High breakdown voltage VCEO

 8.3. Size:118K  sanyo
 2sa1402 2sc3596.pdf

Ordering number EN1761B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1402/2SC3596 Ultrahigh-Difinition CRT Display Video Output Applications Applications Package Dimensions Ultrahigh-definition CRT display. unit mm Video output. 2009B Color TV chroma output. [2SA1402/2SC3596] Wide-band amp. Features High fT fT typ=700MHz. Small reverse transfer capacit

 8.4. Size:119K  sanyo
 2sa1404 2sc3598.pdf

 8.5. Size:136K  sanyo
 2sa1406 2sc3600.pdf

Ordering number EN1765A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1406/2SC3600 Ultrahigh-Definition CRT Display Video Output Applications Applications Package Dimensions Ultrahigh-definition CRT display. unit mm Video output. 2009A Color TV chroma output. [2SA1406/2SC3600] Wide-band amp. Features High fT fT typ=400MHz. High breakdown voltage VCEO

 8.6. Size:118K  sanyo
 2sa1403 2sc3597.pdf

Ordering number EN1762B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1403/2SC3597 Ultrahigh-Difinition CRT Display Video Output Applications Applications Package Dimensions Ultrahig-definition CRT display. unit mm Video output. 2009B Color TV chroma output. [2SA1403/2SC3597] Wide-band amp. Features High fT fT typ=800MHz. Small reverse transfer capacit

 8.7. Size:215K  nec
 2sa1400-z 2sa1400.pdf

 8.8. Size:39K  kexin
 2sa1400-z.pdf

SMD Type Transistors Silicon Transistor 2SA1400-Z TO-252 Unit mm +0.15 +0.1 6.50-0.15 2.30-0.1 +0.2 +0.8 5.30-0.2 0.50-0.7 Features High Voltage VCEO=-400V High speed tr 1.0 s 0.127 +0.1 max 0.80-0.1 +0.1 2.3 0.60-0.1 1 Base +0.15 4.60-0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to Base Voltage VCBO -400 V Collec

 8.9. Size:200K  inchange semiconductor
 2sa1400z.pdf

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1400Z DESCRIPTION High Collector-Emitter Voltage - V = -400V(Min) CEO Complement to Type 2SC3588Z Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage switching ,especially in Hybrid integrated cricuits. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB