2SA1411. Equivalente. Reemplazo. Todos los transistores. Hoja de especificaciones. Principales características

2SA1411 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SA1411

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.25 W

Tensión colector-base (Vcb): 25 V

Corriente del colector DC máxima (Ic): 0.15 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 90

Encapsulados: TO236

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2SA1411 datasheet

..1. Size:27K no
2sa1411.pdf pdf_icon

..2. Size:535K kexin
2sa1411.pdf pdf_icon

SMD Type or SMD Type TransistICs PNP Transistors 2SA1411 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Very high DC current gain hFE=500 to 1600. High VEBO Voltage VEBO=-10V 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -25 V Collector-emitte

8.1. Size:113K sanyo
2sa1418.pdf pdf_icon

8.2. Size:102K sanyo
2sa1416 2sc3646.pdf pdf_icon

Ordering number EN2005B 2SA1416 / 2SC3646 SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA1416 / 2SC3646 High-Voltage Switching Applications Features Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity. Fast switching speed. Ultrasmall size making it easy to provide high-density, small-sized hybrid IC

8.3. Size:126K sanyo
2sa1417.pdf pdf_icon

8.4. Size:57K sanyo
2sa1417 2sc3647.pdf pdf_icon

Ordering number EN2006C 2SA1417 / 2SC3647 SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors High-Voltage Switching 2SA1417 / 2SC3647 Applications Features Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity. Ultrasmall size making it easy to provide high-density small-sized hybrid ICs. Specifications ( ) 2S

8.5. Size:127K sanyo
2sa1419.pdf pdf_icon

8.6. Size:96K sanyo
2sa1418 2sc3648.pdf pdf_icon

Ordering number EN1788B 2SA1418 / 2SC3648 SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors High-Voltage Switching, 2SA1418 / 2SC3648 Preriver Applications Applications Color TV audio output, inverter. Features Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity. Fast switching speed. Ultrasmall siz

8.7. Size:116K sanyo
2sa1415.pdf pdf_icon

Ordering number EN1720A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1415/2SC3645 High-Voltage Switching, Predriver Applications Features Package Dimensions Adoption of FBET process. unit mm High breakdown voltage (VCEO=160V). 2038 Excellent linearity of hFE and small Cob. [2SA1415/2SC3645] Fast switching speed. Very small size marking it easy to provide high

8.8. Size:305K sanyo
2sa1419 2sc3649.pdf pdf_icon

Ordering number EN2007B 2SA1419 / 2SC3649 SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA1419 / 2SC3649 High-Voltage Switching Applications Features Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity. Ultrasmall size making it easy to provide high-density, small-sized hybrid IC s. Specifications ( )

8.9. Size:124K sanyo
2sa1416.pdf pdf_icon

8.10. Size:271K nec
2sa1413-z 2sa1413.pdf pdf_icon

8.11. Size:233K nec
2sa1412-z 2sa1412.pdf pdf_icon

8.12. Size:155K onsemi
2sa1416 2sc3646.pdf pdf_icon

DATA SHEET www.onsemi.com Bipolar Transistor ELECTRICAL CONNECTION 2 2 ( )100 V, ( )1 A, Low VCE(sat), (PNP)NPN Single PCP 1 Base 1 1 2 Collector 3 Emitter 2SA1416, 2SC3646 3 3 2SA1416 2SC3646 Features Adoption of FBET and MBIT Processes High Breakdown Voltage and Large Current Capacity Fast Switching Speed 1 2 Ultrasmall Size Making it Easy to Provi

8.13. Size:217K onsemi
2sa1418s 2sc3648s 2sc3648t.pdf pdf_icon

Ordering number EN1788C 2SA1418/2SC3648 Bipolar Transistor http //onsemi.com ( ) ( ) ( ) ( ) 160V, 0.7A, Low VCE sat , PNP NPN Single PCP Applicaitons Color TV audio output, inverter Features Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Fast switching speed Ultrasmall size making it easy to provide high-density, small-

8.14. Size:224K onsemi
2sa1416s 2sa1416t 2sc3646s 2sc3646t.pdf pdf_icon

Ordering number EN2005C 2SA1416/2SC3646 Bipolar Transistor http //onsemi.com ( ) ) ( ), ( 100V, ( 1A, Low VCE sat PNP)NPN Single PCP Features Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Fast switching speed Ultrasmall size making it easy to provide high-density, small-sized hybrid IC s Specifications ( ) 2SA1416 Absol

8.15. Size:158K onsemi
2sa1417 2sc3647.pdf pdf_icon

DATA SHEET www.onsemi.com Bipolar Transistor 1 2 (-)100 V, (-)2 A, Low VCE(sat), 3 SOT-89-3 (PNP) NPN Single PCP CASE 419AU 2SA1417, 2SC3647 ELECTRICAL CONNECTION Features 2 2 Adoption of FBET, MBIT Processes 1 Base High Breakdown Voltage and Large Current Capacity 1 1 2 Collector Ultrasmall Size Making it Easy to Provide High-density Small-sized 3 Emitter

8.16. Size:213K onsemi
2sa1417s 2sa1417t 2sc3647s 2sc3647t.pdf pdf_icon

Ordering number EN2006D 2SA1417/2SC3647 Bipolar Transistor http //onsemi.com (-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single PCP Features Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Fast switching speed Ultrasmall size making it easy to provide high-density small-sized hybrid ICs Specifications ( ) 2SA1417 Absolute Maximum Rati

8.17. Size:343K onsemi
2sa1418 2sc3648.pdf pdf_icon

8.18. Size:220K onsemi
2sa1419s 2sa1419s-td-h 2sa1419t 2sa1419t-td-h 2sc3649s 2sc3649s-td-h 2sc3649t 2sc3649t-td-h.pdf pdf_icon

Ordering number EN2007C 2SA1419/2SC3649 Bipolar Transistor http //onsemi.com ( ) ( ) ( ) ( ) 160V, 1.5A, Low VCE sat , PNP NPN Single PCP Features Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Ultrasmall size making it easy to provide high-density, small-sized hybrid IC s Specifications ( ) 2SA1419 Absolute Maximum Ratings at

8.19. Size:356K onsemi
2sa1419 2sc3649.pdf pdf_icon

8.20. Size:40K kexin
2sa1412-z.pdf pdf_icon

SMD Type Transistors PNP Silicon Transistor 2SA1412-Z TO-252 Unit mm +0.15 +0.1 6.50-0.15 2.30-0.1 +0.2 +0.8 5.30-0.2 0.50-0.7 Features High Voltage VCEO=-400V High speed tr 0.7 s 0.127 +0.1 max 0.80-0.1 +0.1 2.3 0.60-0.1 1 Base +0.15 4.60-0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to Base Voltage VCBO -400 V Co

8.21. Size:1360K kexin
2sa1413-z.pdf pdf_icon

SMD Type Transistors PNP Transistors 2SA1413-Z TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Features High Voltage VCEO=-600V 0.127 High Speed tf 1us +0.1 0.80-0.1 max Complement to 2SC3632-Z + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4.60 -0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol

8.22. Size:1516K kexin
2sa1418.pdf pdf_icon

SMD Type Transistors PNP Transistors 2SA1418 1.70 0.1 Features Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity Fast Switching Speed 0.42 0.1 0.46 0.1 Complementary to 2SC3648 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -180 Collector - Emitter Voltage VCEO -16

8.23. Size:1526K kexin
2sa1417.pdf pdf_icon

SMD Type Transistors PNP Transistors 2SA1417 1.70 0.1 Features Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity Complementary to 2SC3647 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -120 Collector - Emitter Voltage VCEO -100 V Emitter -

8.24. Size:1548K kexin
2sa1419.pdf pdf_icon

SMD Type Transistors PNP Transistors 2SA1419 1.70 0.1 Features Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity Complementary to 2SC3649 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -180 Collector - Emitter Voltage VCEO -160 V Emitter -

8.25. Size:1328K kexin
2sa1415.pdf pdf_icon

SMD Type Transistors PNP Transistors 2SA1415 1.70 0.1 Features Adoption of FBET Process High Breakdown Voltage (VCEO = 160V) Excellent Linearlity of hFE and Small Cob 0.42 0.1 0.46 0.1 Fast Switching Speed Complementary to 2SC3645 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -180 Collector - Em

8.26. Size:1559K kexin
2sa1416.pdf pdf_icon

SMD Type Transistors PNP Transistors 2SA1416 1.70 0.1 Features Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity 0.42 0.1 0.46 0.1 Fast Switching Time Complementary to 2SC3646 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -120 Collector - Emitter Voltage VCEO -100

8.27. Size:198K inchange semiconductor
2sa1412-z.pdf pdf_icon

isc Silicon NPN Power Transistor 2SA1412-Z DESCRIPTION With TO-252(DPAK) packaging Excellent linearity of h FE Low collector-to-emitter saturation voltage Fast switching speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Relay drivers High-speed inverters Converters High current switching applications ABSOLUTE MA

8.28. Size:195K inchange semiconductor
2sa1413-z.pdf pdf_icon

isc Silicon PNP Power Transistor 2SA1413-Z DESCRIPTION With TO-252(DPAK) packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR

Otros transistores... 2SA1407E , 2SA1407F , 2SA1408 , 2SA1408O , 2SA1408R , 2SA1409 , 2SA141 , 2SA1410 , BD139 , 2SA1412 , 2SA1413 , 2SA1415 , 2SA1415R , 2SA1415S , 2SA1415T , 2SA1416 , 2SA1416R .