2SA1417S . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SA1417S
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.5 W
Tensión colector-base (Vcb): 120 V
Tensión colector-emisor (Vce): 100 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 120 MHz
Capacitancia de salida (Cc): 25 pF
Ganancia de corriente contínua (hfe): 140
Paquete / Cubierta: SOT89
Búsqueda de reemplazo de transistor bipolar 2SA1417S
2SA1417S Datasheet (PDF)
2sa1417s 2sa1417t 2sc3647s 2sc3647t.pdf
Ordering number : EN2006D2SA1417/2SC3647Bipolar Transistorhttp://onsemi.com(-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single PCPFeatures Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Fast switching speed Ultrasmall size making it easy to provide high-density small-sized hybrid ICsSpecifications ( ) : 2SA1417Absolute Maximum Rati
2sa1417 2sc3647.pdf
Ordering number : EN2006C2SA1417 / 2SC3647SANYO SemiconductorsDATA SHEETPNP / NPN Epitaxial Planar Silicon TransistorsHigh-Voltage Switching2SA1417 / 2SC3647ApplicationsFeatures Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity. Ultrasmall size making it easy to provide high-density small-sized hybrid ICs.Specifications ( ) : 2S
2sa1417 2sc3647.pdf
DATA SHEETwww.onsemi.comBipolar Transistor12(-)100 V, (-)2 A, Low VCE(sat),3SOT-89-3(PNP) NPN Single PCPCASE 419AU2SA1417, 2SC3647ELECTRICAL CONNECTIONFeatures2 2 Adoption of FBET, MBIT Processes1 : Base High Breakdown Voltage and Large Current Capacity1 1 2 : Collector Ultrasmall Size Making it Easy to Provide High-density Small-sized3 : Emitter
2sa1417.pdf
SMD Type TransistorsPNP Transistors 2SA14171.70 0.1FeaturesAdoption of FBET, MBIT ProcessesHigh Breakdown Voltage and Large Current Capacity Complementary to 2SC36470.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -120 Collector - Emitter Voltage VCEO -100 V Emitter -
Otros transistores... 2SA1415S , 2SA1415T , 2SA1416 , 2SA1416R , 2SA1416S , 2SA1416T , 2SA1417 , 2SA1417R , TIP42C , 2SA1417T , 2SA1418 , 2SA1418R , 2SA1418S , 2SA1418T , 2SA1419 , 2SA1419R , 2SA1419S .
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050