2SA1450R Todos los transistores

 

2SA1450R . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SA1450R
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.6 W
   Tensión colector-base (Vcb): 100 V
   Tensión colector-emisor (Vce): 80 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 120 MHz
   Capacitancia de salida (Cc): 7 pF
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: TO92

 Búsqueda de reemplazo de transistor bipolar 2SA1450R

 

2SA1450R Datasheet (PDF)

 7.1. Size:127K  sanyo
2sa1450 2sc3708.pdf

2SA1450R
2SA1450R

Ordering number:EN2217APNP/NPN Epitaxial Planar Silicon Transistor2SA1450/2SC3708Low-Frequency Driver ApplicationsFeatures Package Dimensions Adoption of FBET process.unit:mm AF amp, AF power amp.2003A High breakdown voltage : VCEO>80V[2SA1450/2SC3708]JEDEC : TO-92 B : Base( ) : 2SA1450 EIAJ : SC-43 C : CollectorSANYO : NP E : EmitterSpecificationsAbsolute

 8.1. Size:148K  toshiba
2sa1452a.pdf

2SA1450R
2SA1450R

2SA1452A TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1452A High-Speed, High-Current Switching Applications Unit: mm Low collector saturation voltage: VCE (sat) = -0.4 V (max) (IC = -6 A) High-speed switching: tstg = 1.0 s (typ.) Complementary to 2SC3710A Absolute Maximum Ratings (Tc = 25C) Characteristics Symbol Rating UnitCollector-base vo

 8.2. Size:148K  toshiba
2sa1451a.pdf

2SA1450R
2SA1450R

2SA1451A TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1451A High-Speed, High-Current Switching Applications Unit: mm Low collector saturation voltage : VCE (sat) = -0.4 V (max) (IC = -6 A) High-speed switching: tstg = 1.0 s (typ.) Complementary to 2SC3709A Absolute Maximum Ratings (Tc = 25C) Characteristics Symbol Rating UnitCollector-base

 8.3. Size:218K  toshiba
2sa1451.pdf

2SA1450R
2SA1450R

 8.4. Size:220K  toshiba
2sa1452.pdf

2SA1450R
2SA1450R

 8.5. Size:189K  nec
2sa1458.pdf

2SA1450R
2SA1450R

 8.6. Size:304K  nec
2sa1459.pdf

2SA1450R
2SA1450R

 8.7. Size:218K  rohm
2sa1455.pdf

2SA1450R
2SA1450R

 8.8. Size:212K  jmnic
2sa1451.pdf

2SA1450R
2SA1450R

JMnic Product Specification Silicon PNP Power Transistors 2SA1451 DESCRIPTION With TO-220Fa package Low collector saturation voltage High speed switching time Complement to type 2SC3709 APPLICATIONS High current switching applications PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE U

 8.9. Size:213K  jmnic
2sa1452.pdf

2SA1450R
2SA1450R

JMnic Product Specification Silicon PNP Power Transistors 2SA1452 DESCRIPTION With TO-220Fa package Low collector saturation voltage High speed switching time Complement to type 2SC3710 APPLICATIONS High current switching applications PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE U

 8.10. Size:176K  cn sptech
2sa1452o 2sa1452y.pdf

2SA1450R
2SA1450R

SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor 2SA1452DESCRIPTIONLow Collector Saturation Voltage-: V = -0.4V(Max)@I = -6ACE(sat) CGood Linearity of hFEHigh Switching SpeedComplement to Type 2SC3710APPLICATIONSDesigned for high current switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Vol

 8.11. Size:196K  cn sptech
2sa1232r 2sa1452q 2sa1452p.pdf

2SA1450R
2SA1450R

SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor 2SA1232DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -130V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC3012APPLICATIONSFor audio frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -130 VCBOV Collector-

 8.12. Size:213K  inchange semiconductor
2sa1451a.pdf

2SA1450R
2SA1450R

isc Silicon PNP Power Transistor 2SA1451ADESCRIPTIONLow Collector Saturation Voltage-: V = -0.4V(Max)@I = -6ACE(sat) CGood Linearity of hFEHigh Switching SpeedComplement to Type 2SC3709AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching applicationsABSOLUTE MAXIMUM RATINGS(T =25

 8.13. Size:202K  inchange semiconductor
2sa1451.pdf

2SA1450R
2SA1450R

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1451 DESCRIPTION With TO-220Fa package Low collector saturation voltage High speed switching time Complement to type 2SC3709 APPLICATIONS High current switching applications PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER C

 8.14. Size:191K  inchange semiconductor
2sa1452.pdf

2SA1450R
2SA1450R

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA1452DESCRIPTIONLow Collector Saturation Voltage-: V = -0.4V(Max)@I = -6ACE(sat) CGood Linearity of hFEHigh Switching SpeedComplement to Type 2SC3710Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching applicationsABSOLUTE M

Otros transistores... 2SA144 , 2SA1440 , 2SA1441 , 2SA1442 , 2SA1443 , 2SA1444 , 2SA145 , 2SA1450 , NJW0281G , 2SA1450S , 2SA1450T , 2SA1451 , 2SA1451O , 2SA1451Y , 2SA1452 , 2SA1452O , 2SA1452Y .

 

 
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