2SA1450T Todos los transistores

 7.1. Size:127K  sanyo
 2sa1450 2sc3708.pdf

Ordering number EN2217A PNP/NPN Epitaxial Planar Silicon Transistor 2SA1450/2SC3708 Low-Frequency Driver Applications Features Package Dimensions Adoption of FBET process. unit mm AF amp, AF power amp. 2003A High breakdown voltage VCEO>80V [2SA1450/2SC3708] JEDEC TO-92 B Base ( ) 2SA1450 EIAJ SC-43 C Collector SANYO NP E Emitter Specifications Absolute

 8.1. Size:148K  toshiba
 2sa1452a.pdf

2SA1452A TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1452A High-Speed, High-Current Switching Applications Unit mm Low collector saturation voltage VCE (sat) = -0.4 V (max) (IC = -6 A) High-speed switching tstg = 1.0 s (typ.) Complementary to 2SC3710A Absolute Maximum Ratings (Tc = 25 C) Characteristics Symbol Rating Unit Collector-base vo

 8.2. Size:148K  toshiba
 2sa1451a.pdf

2SA1451A TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1451A High-Speed, High-Current Switching Applications Unit mm Low collector saturation voltage VCE (sat) = -0.4 V (max) (IC = -6 A) High-speed switching tstg = 1.0 s (typ.) Complementary to 2SC3709A Absolute Maximum Ratings (Tc = 25 C) Characteristics Symbol Rating Unit Collector-base

 8.3. Size:218K  toshiba
 2sa1451.pdf

 8.4. Size:220K  toshiba
 2sa1452.pdf

 8.5. Size:189K  nec
 2sa1458.pdf

 8.6. Size:304K  nec
 2sa1459.pdf

 8.7. Size:218K  rohm
 2sa1455.pdf

 8.8. Size:212K  jmnic
 2sa1451.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA1451 DESCRIPTION With TO-220Fa package Low collector saturation voltage High speed switching time Complement to type 2SC3709 APPLICATIONS High current switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE U

 8.9. Size:213K  jmnic
 2sa1452.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA1452 DESCRIPTION With TO-220Fa package Low collector saturation voltage High speed switching time Complement to type 2SC3710 APPLICATIONS High current switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE U

 8.10. Size:176K  cn sptech
 2sa1452o 2sa1452y.pdf

SPTECH Product Specification SPTECH Silicon PNP Power Transistor 2SA1452 DESCRIPTION Low Collector Saturation Voltage- V = -0.4V(Max)@I = -6A CE(sat) C Good Linearity of h FE High Switching Speed Complement to Type 2SC3710 APPLICATIONS Designed for high current switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Vol

 8.11. Size:196K  cn sptech
 2sa1232r 2sa1452q 2sa1452p.pdf

SPTECH Product Specification SPTECH Silicon PNP Power Transistor 2SA1232 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -130V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC3012 APPLICATIONS For audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -130 V CBO V Collector-

 8.12. Size:213K  inchange semiconductor
 2sa1451a.pdf

 8.13. Size:202K  inchange semiconductor
 2sa1451.pdf

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1451 DESCRIPTION With TO-220Fa package Low collector saturation voltage High speed switching time Complement to type 2SC3709 APPLICATIONS High current switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER C

 8.14. Size:191K  inchange semiconductor
 2sa1452.pdf

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1452 DESCRIPTION Low Collector Saturation Voltage- V = -0.4V(Max)@I = -6A CE(sat) C Good Linearity of h FE High Switching Speed Complement to Type 2SC3710 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current switching applications ABSOLUTE M