2SA1482 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SA1483 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1483 High Frequency Amplifier Applications Unit: mm Video Amplifier Applications High Speed SwitcHing Applications High transition frequency: fT = 200 MHz (typ.) Low collector output capacitance: C = 3.5 pF (typ.) ob Complementary to 2SC3803 Maximum Ratings (Ta = 25C) Characteristics Sym

Ordering number:EN2254PNP/NPN Epitaxial Planar Silicon Transistors2SA1480/2SC3790High-Definiton CRT DisplayVideo Output ApplicationsFeatures Package Dimensions High breakdown voltage (VCEO 300V).unit:mm Small reverse transfer capacitance and excellent high2042Afrequency characteristic[2SA1480/2SC3790]: Cre=1.8pF (NPN), 2.3pF (PNP). Adoption of MBIT process.

Ordering number:EN829HPNP/NPN Epitaxial Planar Silicon Transistors2SA1481/2SC2960High-Speed Switching ApplicationsFeatures Package Dimensions Fast switching speed.unit:mm High breakdown voltage.2033[2SA1481/2SC2960]B : BaseC : Collector( ) : 2SA1481E : EmitterSpecificationsSANYO : SPAAbsolute Maximum Ratings at Ta = 25CParameter Symbol Conditions Rating

Transistor2SA1487Silicon PNP epitaxial planer typeFor video amplifierUnit: mm5.9 0.2 4.9 0.2FeaturesHigh transition frequency fT.Small collector output capacitance Cob.0.7 0.12.54 0.15Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to base voltage VCBO 85 V+0.2 +0.2Collector to emitter voltage VCEO 85 V0.450.1 0.450.1

Transistor2SA1487Silicon PNP epitaxial planer typeFor video amplifierUnit: mm5.9 0.2 4.9 0.2FeaturesHigh transition frequency fT.Small collector output capacitance Cob.0.7 0.12.54 0.15Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to base voltage VCBO 85 V+0.2 +0.2Collector to emitter voltage VCEO 85 V0.450.1 0.450.1

2SA1485Silicon PNP EpitaxialApplicationLow frequency amplifierOutlineTO-92 (1)1. Emitter2. Collector3. Base3212SA1485Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 200 VCollector to emitter voltage VCEO 200 VEmitter to base voltage VEBO 5 VCollector current IC 100 mACollector power dissipation PC 200

2SA1484Silicon PNP EpitaxialApplicationLow frequency amplifierOutlineMPAK311. Emitter2. Base23. Collector2SA1484Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 90 VCollector to emitter voltage VCEO 90 VEmitter to base voltage VEBO 5 VCollector current IC 100 mACollector power dissipation PC 150 mWJu

JMnic Product Specification Silicon PNP Power Transistors 2SA1488 2SA1488A DESCRIPTION With TO-220F package Complement to type 2SC3851/3851A APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol 3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT2SA1488 -60

JMnic Product Specification Silicon PNP Power Transistors 2SA1489 DESCRIPTION With TO-3PN package Complement to type 2SC3853 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UNIT

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

2SA1488/1488ASilicon PNP Epitaxial Planar Transistor (Complement to type 2SC3851/A)Application : Audio and General PurposeExternal Dimensions FM20 (TO220F) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Ratings RatingsSymbol Unit Symbol Conditions Unit0.24.20.210.12SA1488 2SA1488A 2SA1488 2SA1488Ac0.52.8VCBO 60 80 V 100max 10

SMD Type TransistorsPNP Transistors2SA1483 Features1.70 0.1 High transition frequency Low collector output capacitance Complementary to 2SC38030.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -45 V Emitter - Base Voltage

SMD Type orSMD Type TransistICsPNP Transistors2SA1484SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=-90V1 2+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector to base voltage VCBO -90

2SA1480(3CA1480) PNP /SILICON PNP TRANSISTOR : Purpose: High-definition CRT display video output applications. : Features: High breakdown voltage, small reverse transfer capacitance and excellent high frequency characteristic. /Absolu

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1488 2SA1488A DESCRIPTION With TO-220F package Complement to type 2SC3851/3851A APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol 3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE

isc Silicon PNP Power Transistor 2SA1486DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOWith TO-126 packageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifiers applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltag

isc Silicon PNP Power Transistor 2SA1488ADESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEODC Current Gain-: h = 40(Min)@ I = -1AFE CComplement to Type 2SC3851AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)a

isc Silicon PNP Power Transistor 2SA1489DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -80V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC3853Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Coll

isc Silicon PNP Power Transistor 2SA1488DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEODC Current Gain-: h = 40(Min)@ I = -1AFE CComplement to Type 2SC3851Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)a