2SA1482 Todos los transistores

 8.1. Size:178K  toshiba
 2sa1483.pdf

2SA1483 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1483 High Frequency Amplifier Applications Unit mm Video Amplifier Applications High Speed SwitcHing Applications High transition frequency fT = 200 MHz (typ.) Low collector output capacitance C = 3.5 pF (typ.) ob Complementary to 2SC3803 Maximum Ratings (Ta = 25 C) Characteristics Sym

 8.2. Size:175K  sanyo
 2sa1480 2sc3790.pdf

Ordering number EN2254 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1480/2SC3790 High-Definiton CRT Display Video Output Applications Features Package Dimensions High breakdown voltage (VCEO 300V). unit mm Small reverse transfer capacitance and excellent high 2042A frequency characteristic [2SA1480/2SC3790] Cre=1.8pF (NPN), 2.3pF (PNP). Adoption of MBIT process.

 8.3. Size:223K  sanyo
 2sa1481 2sc2960.pdf

Ordering number EN829H PNP/NPN Epitaxial Planar Silicon Transistors 2SA1481/2SC2960 High-Speed Switching Applications Features Package Dimensions Fast switching speed. unit mm High breakdown voltage. 2033 [2SA1481/2SC2960] B Base C Collector ( ) 2SA1481 E Emitter Specifications SANYO SPA Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Conditions Rating

 8.4. Size:174K  nec
 2sa1486.pdf

 8.5. Size:38K  panasonic
 2sa1487 e.pdf

Transistor 2SA1487 Silicon PNP epitaxial planer type For video amplifier Unit mm 5.9 0.2 4.9 0.2 Features High transition frequency fT. Small collector output capacitance Cob. 0.7 0.1 2.54 0.15 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 85 V +0.2 +0.2 Collector to emitter voltage VCEO 85 V 0.45 0.1 0.45 0.1

 8.6. Size:45K  panasonic
 2sa1487.pdf

Transistor 2SA1487 Silicon PNP epitaxial planer type For video amplifier Unit mm 5.9 0.2 4.9 0.2 Features High transition frequency fT. Small collector output capacitance Cob. 0.7 0.1 2.54 0.15 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 85 V +0.2 +0.2 Collector to emitter voltage VCEO 85 V 0.45 0.1 0.45 0.1

 8.7. Size:28K  hitachi
 2sa1485.pdf

2SA1485 Silicon PNP Epitaxial Application Low frequency amplifier Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SA1485 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 200 V Collector to emitter voltage VCEO 200 V Emitter to base voltage VEBO 5 V Collector current IC 100 mA Collector power dissipation PC 200

 8.8. Size:36K  hitachi
 2sa1484.pdf

2SA1484 Silicon PNP Epitaxial Application Low frequency amplifier Outline MPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SA1484 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 90 V Collector to emitter voltage VCEO 90 V Emitter to base voltage VEBO 5 V Collector current IC 100 mA Collector power dissipation PC 150 mW Ju

 8.9. Size:186K  jmnic
 2sa1488 2sa1488a.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA1488 2SA1488A DESCRIPTION With TO-220F package Complement to type 2SC3851/3851A APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2SA1488 -60

 8.10. Size:149K  jmnic
 2sa1489.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA1489 DESCRIPTION With TO-3PN package Complement to type 2SC3853 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT

 8.11. Size:200K  sanken-ele
 2sa1489.pdf

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 8.12. Size:28K  sanken-ele
 2sa1488.pdf

2SA1488/1488A Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3851/A) Application Audio and General Purpose External Dimensions FM20 (TO220F) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Ratings Ratings Symbol Unit Symbol Conditions Unit 0.2 4.2 0.2 10.1 2SA1488 2SA1488A 2SA1488 2SA1488A c0.5 2.8 VCBO 60 80 V 100max 10

 8.13. Size:894K  kexin
 2sa1483.pdf

SMD Type Transistors PNP Transistors 2SA1483 Features 1.70 0.1 High transition frequency Low collector output capacitance Complementary to 2SC3803 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -45 V Emitter - Base Voltage

 8.14. Size:859K  kexin
 2sa1484.pdf

SMD Type or SMD Type TransistICs PNP Transistors 2SA1484 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=-90V 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO -90

 8.15. Size:278K  lzg
 2sa1480 3ca1480.pdf

2SA1480(3CA1480) PNP /SILICON PNP TRANSISTOR Purpose High-definition CRT display video output applications. Features High breakdown voltage, small reverse transfer capacitance and excellent high frequency characteristic. /Absolu

 8.16. Size:191K  inchange semiconductor
 2sa1488 2sa1488a.pdf

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1488 2SA1488A DESCRIPTION With TO-220F package Complement to type 2SC3851/3851A APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE

 8.17. Size:195K  inchange semiconductor
 2sa1486.pdf

isc Silicon PNP Power Transistor 2SA1486 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO With TO-126 package Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifiers applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltag

 8.18. Size:208K  inchange semiconductor
 2sa1488a.pdf

isc Silicon PNP Power Transistor 2SA1488A DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO DC Current Gain- h = 40(Min)@ I = -1A FE C Complement to Type 2SC3851A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a

 8.19. Size:216K  inchange semiconductor
 2sa1489.pdf

isc Silicon PNP Power Transistor 2SA1489 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC3853 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Coll

 8.20. Size:211K  inchange semiconductor
 2sa1488.pdf

isc Silicon PNP Power Transistor 2SA1488 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60V(Min) (BR)CEO DC Current Gain- h = 40(Min)@ I = -1A FE C Complement to Type 2SC3851 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a