2SA1493 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SA1493
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 150 W
Tensión colector-base (Vcb): 200 V
Tensión colector-emisor (Vce): 200 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 15 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 20 MHz
Capacitancia de salida (Cc): 400 pF
Ganancia de corriente contínua (hFE): 50
Encapsulados: MT200
Búsqueda de reemplazo de 2SA1493
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2SA1493 datasheet
..1. Size:250K jmnic
2sa1493.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SA1493 DESCRIPTION With MT-200 package Complement to type 2SC3857 APPLICATIONS Audio and general purpose PINNING(see Fig.2) PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITI
..2. Size:28K sanken-ele
2sa1493.pdf
2SA1493 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3857) Application Audio and General Purpose External Dimensions MT-200 Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol Ratings Unit Symbol Conditions Ratings Unit 0.2 6.0 0.3 36.4 VCBO 200 V ICBO VCB= 200V 100max A 0.2 24.4 2.1 0.1 2- 3.2 9 VCEO 200
..3. Size:221K inchange semiconductor
2sa1493.pdf
isc Silicon PNP Power Transistor 2SA1493 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -200V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC3857 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Col
8.2. Size:59K panasonic
2sa1499.pdf
Power Transistors 2SA1499 Silicon PNP epitaxial planar type For high-speed switching Unit mm 10.0 0.2 4.2 0.2 Features 5.5 0.2 2.7 0.2 High foward current transfer ratio hFE High-speed switching 3.1 0.1 High collector to base voltage VCBO Full-pack package which can be installed to the heat sink with one screw. 1.3 0.2 1.4 0.1 Absolute Maximum Ratings (TC=25 C
8.3. Size:25K wingshing
2sa1491.pdf
2SA1491 PNP PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER SC-65 High Current Capability High Power Dissipation Complementary to 2SC3855 ABSOLUTE MAXIMUM RATING (Ta=25 C C) C C Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -200 V Collector-Emitter Voltage VCEO -140 V Emitter-Base voltage VEBO -6 V Collector Current (DC) IC -10 A Coll
8.4. Size:25K wingshing
2sa1490.pdf
2SA1490 PNP PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER SC-65 High Current Capability High Power Dissipation Complementary to 2SC3854 ABSOLUTE MAXIMUM RATING (Ta=25 C C) C C Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -160 V Collector-Emitter Voltage VCEO -120 V Emitter-Base voltage VEBO -6 V Collector Current (DC) IC -8 A Colle
8.5. Size:292K jmnic
2sa1491.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1491 DESCRIPTION With TO-3PN package Complement to type 2SC3855 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT
8.6. Size:150K jmnic
2sa1490.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1490 DESCRIPTION With TO-3PN package Complement to type 2SC3854 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT
8.7. Size:182K jmnic
2sa1492.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1492 DESCRIPTION With TO-3PN package Complement to type 2SC3856 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT
8.8. Size:221K jmnic
2sa1494.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1494 DESCRIPTION With MT-200 package Complement to type 2SC3858 APPLICATIONS Audio and general purpose PINNING(see Fig.2) PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITI
8.9. Size:28K sanken-ele
2sa1492.pdf
2SA1492 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3856) Application Audio and General Purpose External Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol Ratings Unit Symbol Conditions Ratings Unit 0.2 4.8 0.4 15.6 0.1 9.6 2.0 VCBO 180 V ICBO VCB= 180V 100max A VCEO 180 V IEBO VEB= 6
8.10. Size:28K sanken-ele
2sa1494.pdf
2SA1494 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3858) Application Audio and General Purpose External Dimensions MT-200 Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol Ratings Unit Symbol Conditions Ratings Unit 0.2 6.0 0.3 36.4 VCBO 200 V ICBO VCB= 200V 100max A 0.2 24.4 2.1 VCEO IEBO VEB= 6V 100max
8.11. Size:1286K cn sps
2sa1492t4bl.pdf
2SA1492T4BL Silicon PNP Power Transistor DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -180V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC3856 APPLICATIONS For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -180 V CBO V Collector-Emitter Voltage -180 V CEO V Emitt
8.12. Size:428K cn sptech
2sa1492o 2sa1492p 2sa1492y.pdf
SPTECH Product Specification SPTECH Silicon PNP Power Transistor 2SA1492 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -180V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC3856 APPLICATIONS For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -180 V CBO V Collector-Emit
8.13. Size:219K inchange semiconductor
2sa1491.pdf
isc Silicon PNP Power Transistor 2SA1491 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -140V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC3855 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Col
8.14. Size:217K inchange semiconductor
2sa1490.pdf
isc Silicon PNP Power Transistor 2SA1490 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC3854 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Col
8.15. Size:220K inchange semiconductor
2sa1492.pdf
isc Silicon PNP Power Transistor 2SA1492 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -180V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC3856 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT
8.16. Size:115K inchange semiconductor
2sa1494.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA1494 DESCRIPTION Collector-Emitter Breakdown Voltage- V(BR)CEO= -200V(Min) Good Linearity of hFE Complement to Type 2SC3858 APPLICATIONS For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V V
Otros transistores... 2SA1489
, 2SA149
, 2SA1490
, 2SA1491
, 2SA1492
, 2SA1492O
, 2SA1492P
, 2SA1492Y
, A1013
, 2SA1493O
, 2SA1493P
, 2SA1493Y
, 2SA1494
, 2SA1494G
, 2SA1494P
, 2SA1494Y
, 2SA1495
.
History: 2SA1389
| 2SA1370C
| 2SA146
| 2SA1390
| 2SD2562
| 2SA1461
