2SA1496 Todos los transistores

 8.1. Size:88K  sanyo
 2sa1497 2sc3860.pdf

 8.2. Size:59K  panasonic
 2sa1499.pdf

Power Transistors 2SA1499 Silicon PNP epitaxial planar type For high-speed switching Unit mm 10.0 0.2 4.2 0.2 Features 5.5 0.2 2.7 0.2 High foward current transfer ratio hFE High-speed switching 3.1 0.1 High collector to base voltage VCBO Full-pack package which can be installed to the heat sink with one screw. 1.3 0.2 1.4 0.1 Absolute Maximum Ratings (TC=25 C

 8.3. Size:25K  wingshing
 2sa1491.pdf

2SA1491 PNP PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER SC-65 High Current Capability High Power Dissipation Complementary to 2SC3855 ABSOLUTE MAXIMUM RATING (Ta=25 C C) C C Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -200 V Collector-Emitter Voltage VCEO -140 V Emitter-Base voltage VEBO -6 V Collector Current (DC) IC -10 A Coll

 8.4. Size:25K  wingshing
 2sa1490.pdf

2SA1490 PNP PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER SC-65 High Current Capability High Power Dissipation Complementary to 2SC3854 ABSOLUTE MAXIMUM RATING (Ta=25 C C) C C Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -160 V Collector-Emitter Voltage VCEO -120 V Emitter-Base voltage VEBO -6 V Collector Current (DC) IC -8 A Colle

 8.5. Size:292K  jmnic
 2sa1491.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA1491 DESCRIPTION With TO-3PN package Complement to type 2SC3855 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT

 8.6. Size:150K  jmnic
 2sa1490.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA1490 DESCRIPTION With TO-3PN package Complement to type 2SC3854 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT

 8.7. Size:182K  jmnic
 2sa1492.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA1492 DESCRIPTION With TO-3PN package Complement to type 2SC3856 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT

 8.8. Size:250K  jmnic
 2sa1493.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA1493 DESCRIPTION With MT-200 package Complement to type 2SC3857 APPLICATIONS Audio and general purpose PINNING(see Fig.2) PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITI

 8.9. Size:221K  jmnic
 2sa1494.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA1494 DESCRIPTION With MT-200 package Complement to type 2SC3858 APPLICATIONS Audio and general purpose PINNING(see Fig.2) PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITI

 8.10. Size:28K  sanken-ele
 2sa1492.pdf

2SA1492 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3856) Application Audio and General Purpose External Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol Ratings Unit Symbol Conditions Ratings Unit 0.2 4.8 0.4 15.6 0.1 9.6 2.0 VCBO 180 V ICBO VCB= 180V 100max A VCEO 180 V IEBO VEB= 6

 8.11. Size:28K  sanken-ele
 2sa1493.pdf

2SA1493 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3857) Application Audio and General Purpose External Dimensions MT-200 Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol Ratings Unit Symbol Conditions Ratings Unit 0.2 6.0 0.3 36.4 VCBO 200 V ICBO VCB= 200V 100max A 0.2 24.4 2.1 0.1 2- 3.2 9 VCEO 200

 8.12. Size:28K  sanken-ele
 2sa1494.pdf

2SA1494 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3858) Application Audio and General Purpose External Dimensions MT-200 Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol Ratings Unit Symbol Conditions Ratings Unit 0.2 6.0 0.3 36.4 VCBO 200 V ICBO VCB= 200V 100max A 0.2 24.4 2.1 VCEO IEBO VEB= 6V 100max

 8.13. Size:1286K  cn sps
 2sa1492t4bl.pdf

2SA1492T4BL Silicon PNP Power Transistor DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -180V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC3856 APPLICATIONS For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -180 V CBO V Collector-Emitter Voltage -180 V CEO V Emitt

 8.14. Size:428K  cn sptech
 2sa1492o 2sa1492p 2sa1492y.pdf

SPTECH Product Specification SPTECH Silicon PNP Power Transistor 2SA1492 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -180V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC3856 APPLICATIONS For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -180 V CBO V Collector-Emit

 8.15. Size:219K  inchange semiconductor
 2sa1491.pdf

isc Silicon PNP Power Transistor 2SA1491 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -140V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC3855 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Col

 8.16. Size:217K  inchange semiconductor
 2sa1490.pdf

isc Silicon PNP Power Transistor 2SA1490 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC3854 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Col

 8.17. Size:220K  inchange semiconductor
 2sa1492.pdf

isc Silicon PNP Power Transistor 2SA1492 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -180V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC3856 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT

 8.18. Size:221K  inchange semiconductor
 2sa1493.pdf

isc Silicon PNP Power Transistor 2SA1493 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -200V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC3857 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Col

 8.19. Size:115K  inchange semiconductor
 2sa1494.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA1494 DESCRIPTION Collector-Emitter Breakdown Voltage- V(BR)CEO= -200V(Min) Good Linearity of hFE Complement to Type 2SC3858 APPLICATIONS For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V V