2SA1516 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

JMnic Product Specification Silicon PNP Power Transistors 2SA1516 DESCRIPTION With TO-3P(I) package Complement to type 2SC3907 High collector voltage APPLICATIONS Power amplifier applications Recommend for 80W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified o

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA1516DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -180V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC3907Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 80W high fidelity audio frequencyamplifier

Ordering number:ENN2159BPNP/NPN Epitaxial Planar Silicon Transistors2SA1518/2SC3912Switching Applications (With Bias Resistance)Application Package Dimensions Switching circuits, inverters circuits, inferfaceunit:mmcircuits, driver circuits.2018B[2SA1518/2SC3912]Features0.4 On-chip bias resistance : R1=10k , R2=10k . 0.163 Small-sized package : CP.0

Ordering number:ENN2160BPNP/NPN Epitaxial Planar Silicon Transistors2SA1519/2SC3913Switching Applications (with Bias Resistance)Applications Package Dimensions Switching circuits, inverter circuits, interface circuits,unit:mmdriver circuits.2018B[2SA1519/2SC3913]Features0.4 On-chip bias resistance : R1=4.7k , R2=4.7k . 0.163 Small-sized package : CP.

2SA1514K FRADatasheetHigh-voltage Amplifier Transistor(-120V,-50mA)AEC-Q101 QualifiedlOutlinel SOT-346 Parameter Value SC-59 VCEO-120VIC-50mASMT3lFeatures lInner circuitl l1)High breakdown voltage. (BVCEO=-120V)2)Complements the 2SC3906K FRAlApplicationlHIGH VOLTAGE AMPLIFIERlPackaging specificationslBasic

Medium Power Transistor (32V,1A) 2SB1132 / 2SA1515S / 2SB1237 Features Dimensions (Unit : mm) 1) Low VCE(sat). 2SB1132 2SA1515SVCE(sat) = 0.2V(Typ.) + +4 0.2 2 0.2- -4.5 +0.2 -0.1(IC / IB = 500mA / 50mA) 1.5 +0.2+1.6 0.1 -0.1-2) Compliments 2SD1664 / 2SD1858 (1) (2) (3) 0.45 +0.15 -0.050.4 +0.1Structure -0.05++ 0.5 0.10.

Medium Power Transistor (32V,1A) 2SA1515S / 2SB1237 Features Dimensions (Unit : mm) 1) Low VCE(sat). 2SA1515S 2SB1237+2.5 0.2VCE(sat) = 0.2V(Typ.) + + +-4 0.2 2 0.2 6.8 0.2- - -(IC / IB = 500mA / 50mA) 2) Compliments 2SD1858 Structure 0.45 +0.15 0.65Max. -0.05Epitaxial planar type +PNP silicon transistor 0.5 0.1-0.45 +0.152.5

2SA1579 / 2SA1514K / 2SA1038STransistorsHigh-voltage Amplifier Transistor(-120V, -50mA)2SA1579 / 2SA1514K / 2SA1038S External dimensions (Units : mm) Features1) High breakdown voltage. (BVCEO = -120V)2SA15792) Complements the 2SC4102 / 2SC3906K / 2SC2389S.1.252.1 Absolute maximum ratings (Ta=25C)Parameter Symbol Limits UnitCollector-base voltage VCBO -120 VCollec

Transistor2SA1512Silicon PNP epitaxial planer typeFor low-frequency output amplificationUnit: mmComplementary to 2SC17884.0 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).Optimum for low-voltage operation and for converters.Allowing supply with the radial taping.Optimum for high-density mounting.Absolute Maximum Ratings (Ta=25C) marking1 2 3Param

Transistor2SA1512Silicon PNP epitaxial planer typeFor low-frequency output amplificationUnit: mmComplementary to 2SC17884.0 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).Optimum for low-voltage operation and for converters.Allowing supply with the radial taping.Optimum for high-density mounting.Absolute Maximum Ratings (Ta=25C) marking1 2 3Param

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors TO 92S 2SA1515S TRANSISTOR (PNP) 1. EMITTER FEATURES 2. COLLECTOR General Purpose Switching Application 3. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -32 V VEBO Emitter-

JMnic Product Specification Silicon PNP Power Transistors 2SA1513 DESCRIPTION With TO-3PML package High current capability Low collector saturation voltage APPLICATIONS For high speed and high power switching applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 EmitterMaximum absolute ratings(Ta=25) S

SMD Type TransistorsPNP Transistors2SA1518SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=-500mA1 2 Collector Emitter Voltage VCEO=-50V+0.050.95+0.1-0.1 0.1 -0.011.9+0.1 Complementary to 2SC3912 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector

SMD Type TransistorsPNP Transistors2SA1510SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=-100mA1 2 Collector Emitter Voltage VCEO=-50V+0.1+0.050.95 -0.1 0.1-0.01+0.1 Complementary to 2SC3900 1.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collecto

SMD Type TransistorsPNP Transistors2SA1519SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=-500mA1 2 Collector Emitter Voltage VCEO=-50V+0.10.95-0.1 0.1+0.05-0.01 Complementary to 2SC39131.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector

SMD Type TransistorsPNP Transistors2SA1514KSOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features High Breakdown Voltage Lead Free/RoHS Compliant.1 2+0.1+0.050.95-0.1 0.1-0.01 Complementary to 2SC3906K+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -1

isc Silicon PNP Power Transistor 2SA1513DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOHigh Currrent CapacityLow Collector Saturation Voltage-: V = -0.5V(Max.)@ I = -12ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed and high power switchingapplications.ABSOL