2SA1537D Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SA1537D
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 10 W
Tensión colector-base (Vcb): 80 V
Tensión colector-emisor (Vce): 70 V
Tensión emisor-base (Veb): 3 V
Corriente del colector DC máxima (Ic): 0.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 700 MHz
Capacitancia de salida (Cc): 5.4 pF
Ganancia de corriente contínua (hFE): 60
Encapsulados: TO126
Búsqueda de reemplazo de 2SA1537D
- Selecciónⓘ de transistores por parámetros
2SA1537D datasheet
7.1. Size:41K sanyo
2sa1537 2sc3952.pdf 
Ordering number ENN2436C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1537/2SC3952 High-Definition CRT Display Video Output Applications Applications Package Dimensions High-definition CRT display video output, wide-band unit mm amplifier. 2042B [2SA1537/2SC3952] 8.0 Features 4.0 3.3 1.0 1.0 High fT fT=700MHz. High breakdown voltage VCEO=70Vmin. 3.0 Sma
8.1. Size:41K sanyo
2sa1539 2sc3954.pdf
Ordering number ENN2438B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1539/2SC3954 High-Definition CRT Display Video Output Applications Package Dimensions Applications High-definition CRT display video output, wide-band unit mm amplifier. 2042B [2SA1539/SC3954] 8.0 Features 4.0 3.3 1.0 1.0 High fT fT=500MHz. High breakdown voltage VCEO=120Vmin. 3.0 Sm
8.2. Size:40K sanyo
2sa1538 2sc3953.pdf
Ordering number ENN2437B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1538/2SC3953 High-Definition CRT Display Video Output Applications Package Dimensions Applications High-definition CRT display video output, wide-band unit mm amplifier. 2042B [2SA1538/2SC3953] 8.0 Features 4.0 3.3 1.0 1.0 High fT fT=400MHz. High breakdown voltage VCEO=120Vmin. 3.0 S
8.3. Size:41K sanyo
2sa1536 2sc3951.pdf
Ordering number ENN2435B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1536/2SC3951 High-Definition CRT Display Video Output Applications Applications Package Dimensions High definition CRT display video output, wide-band unit mm amplifier. 2042B [2SA1536/2SC3951] 8.0 Features 4.0 3.3 1.0 1.0 High fT fT=600MHz. High breakdown voltage VCEO=70Vmin. 3.0 Sma
8.4. Size:37K panasonic
2sa1532.pdf
Transistor 2SA1532 Silicon PNP epitaxial planer type For high-frequency amplification Unit mm Complementary to 2SC3930 2.1 0.1 0.425 1.25 0.1 0.425 Features High transition frequency fT. 1 S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 3 packing. 2 Absolute Maximum Ratings (Ta=25 C) Parameter Sym
8.5. Size:51K panasonic
2sa1533 e.pdf
Transistor 2SA1533 Silicon PNP epitaxial planer type For low-frequency driver amplification Unit mm Complementary to 2SC3939 5.0 0.2 4.0 0.2 Features High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier. 0.7 0.1 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.15 +0.15 Collector to base v
8.6. Size:47K panasonic
2sa1534.pdf
Transistor 2SA1534, 2SA1534A Silicon PNP epitaxial planer type For low-frequency power amplification and driver amplification Unit mm Complementary to 2SC3940 and 2SC3940A 5.0 0.2 4.0 0.2 Features Complementary pair with 2SC3940 and 2SC3940A. Allowing supply with the radial taping and automatic insertion possible. 0.7 0.1 Absolute Maximum Ratings (Ta=25 C) Parameter Symbo
8.7. Size:46K panasonic
2sa1535.pdf
Power Transistors 2SA1535, 2SA1535A Silicon PNP epitaxial planar type For low-frequency driver and high power amplification Unit mm Complementary to 2SC3944 and 2SC3944A 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features Satisfactory foward current transfer ratio hFE vs. collector cur- rent IC characteristics 3.1 0.1 High transition frequency fT Makes up a complementary pair w
8.8. Size:47K panasonic
2sa1533.pdf
Transistor 2SA1533 Silicon PNP epitaxial planer type For low-frequency driver amplification Unit mm Complementary to 2SC3939 5.0 0.2 4.0 0.2 Features High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier. 0.7 0.1 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.15 +0.15 Collector to base v
8.9. Size:41K panasonic
2sa1532 e.pdf
Transistor 2SA1532 Silicon PNP epitaxial planer type For high-frequency amplification Unit mm Complementary to 2SC3930 2.1 0.1 0.425 1.25 0.1 0.425 Features High transition frequency fT. 1 S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 3 packing. 2 Absolute Maximum Ratings (Ta=25 C) Parameter Sym
8.10. Size:55K panasonic
2sa1531 e.pdf
Transistor 2SA1531, 2SA1531A Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Unit mm Complementary to 2SC3929 and 2SC3929A Features 2.1 0.1 Low noise voltage NV. 0.425 1.25 0.1 0.425 High foward current transfer ratio hFE. S-Mini type package, allowing downsizing of the equipment and 1 automatic insertion through the tape packing and the magaz
8.11. Size:50K panasonic
2sa1531.pdf
Transistor 2SA1531, 2SA1531A Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Unit mm Complementary to 2SC3929 and 2SC3929A Features 2.1 0.1 Low noise voltage NV. 0.425 1.25 0.1 0.425 High foward current transfer ratio hFE. S-Mini type package, allowing downsizing of the equipment and 1 automatic insertion through the tape packing and the magaz
8.12. Size:51K panasonic
2sa1534 e.pdf
Transistor 2SA1534, 2SA1534A Silicon PNP epitaxial planer type For low-frequency power amplification and driver amplification Unit mm Complementary to 2SC3940 and 2SC3940A 5.0 0.2 4.0 0.2 Features Complementary pair with 2SC3940 and 2SC3940A. Allowing supply with the radial taping and automatic insertion possible. 0.7 0.1 Absolute Maximum Ratings (Ta=25 C) Parameter Symbo
8.13. Size:92K isahaya
2sa1530a.pdf
ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with
8.14. Size:226K jmnic
2sa1535 2sa1535a.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1535 2SA1535A DESCRIPTION With TO-220Fa package Complement to type 2SC3944/3944A Optimum for the driver-stage of a 60W to 100W output amplifier APPLICATIONS For low-frequency driver and high power amplification PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 )
8.15. Size:914K kexin
2sa1532.pdf
SMD Type Transistors PNP Transistors 2SA1532 Features High transition frequency fT. Complementary to 2SC3930 1.Base 2.Emitter 3.Colletor Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -30 Collector - Emitter Voltage VCEO -20 V Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -30 mA Collector Po
8.16. Size:1065K kexin
2sa1531a.pdf
SMD Type Transistors PNP Transistors 2SA1531A Features Low noise voltage NV. High foward current transfer ratio hFE. Complementary to 2SC3929A 1 Base 2 Emitter 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -55 Collector - Emitter Voltage VCEO -55 V Emitter - Base Voltage VEBO -5 Collector Curr
8.17. Size:739K kexin
2sa1530a.pdf
SMD Type Transistors PNP Transistors 2SA1530A SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=-150mA 1 2 Collector Emitter Voltage VCEO=-50V +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Co
8.18. Size:143K inchange semiconductor
2sa1535 a.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2SA1535/A DESCRIPTION Collector-Emitter Breakdown Voltage- V(BR)CEO= -150V(Min) -2SA1535 = -180V(Min) -2SA1535A Good Linearity of hFE Complement to Type 2SC3944/A APPLICATIONS Designed for low-frequency driver and high power amplifi- cation, is optimum for the driver-stage of a 60W
8.19. Size:218K inchange semiconductor
2sa1535 2sa1535a.pdf
isc Silicon PNP Power Transistors 2SA1535/A DESCRIPTION Collector-Emitter Breakdown Voltage- V = -150V(Min) -2SA1535 (BR)CEO = -180V(Min) -2SA1535A Good Linearity of h FE Complement to Type 2SC3944/A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low-frequency driver and high power amplifi- cation, is optimum
Otros transistores... 2SA1535A
, 2SA1536
, 2SA1536C
, 2SA1536D
, 2SA1536E
, 2SA1536F
, 2SA1537
, 2SA1537C
, 2N2222A
, 2SA1537E
, 2SA1537F
, 2SA1538
, 2SA1538C
, 2SA1538D
, 2SA1538E
, 2SA1538F
, 2SA1539
.
History: 2SA12
| 2SA1538C
| 2SC1004A
| 2SA1537F
| 2SB1119U
| 2N5142
| 2SB965
