2SA1586G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SA1586 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1586 Audio Frequency General Purpose Amplifier Applications Unit: mmHigh voltage and high current: VCEO = -50 V, IC = -150 mA (max) Excellent hFE linearity: hFE (IC = -0.1 mA)/ hFE (IC = -2 mA) = 0.95 (typ.) High hFE: hFE = 70~400 Low noise: NF = 1dB (typ.), 10dB (max) Complementary to 2

2SA1586Bipolar Transistors Silicon PNP Epitaxial Type2SA15861. Applications Low-Frequency Amplifiers Audio Frequency General Purpose Amplifier Applications2. Features(1) AEC-Q101 qualified (Please see the orderable part number list)(2) High voltage: VCEO = -50 V(3) High collector current: IC = -150 mA (max)(4) High hFE: hFE = 70 to 400(5) Excellent hFE linearity: hFE

2SA1586 -0.15 A, -50 V PNP Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-323FEATURES High DC Current Gain High Voltage and High Current AL Complementary to 2SC4116 33 Small Package Top View C B11 22K EAPPLICATIONS General Purpose Amplifi

2SA1 58 6TRANSISTOR(PNP)FEATURES SOT323 High DC Current Gain High Voltage and High Current. Complementary to 2SC4116 Small Package APPLICATIONS General Purpose Amplification. 1. BASE 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Unit VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter

SMD Type TransistorsPNP Transistors2SA1586 Features High DC Current Gain High Voltage and High Current. Complementary to 2SC4116 Small Package1.Base2.Emitter3.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage VCEO -50 V Emitter - Base Voltage VEBO -5 Collec