2SA1615 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

isc Silicon PNP Power Transistor 2SA1615DESCRIPTIONLarge current capacity:I = -10A I =-15AC(DC) C(pulse)High h and low saturation voltage:FEh = 200min (V =-2V,I =-0.5A)FE CE CV -0.25V (I =-4A,I =-0.05A)CE(sat) C B100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThe 2SA1615 is available for

DATA SHEETSILICON POWER TRANSISTORS2SA1615, 1615-ZPNP SILICON EPITAXIAL TRANSISTORFOR HIGH-SPEED SWITCHINGThe 2SA1615 and 1615-Z are available for the large current control in small dimension due to the low saturationand are ideal for high-efficiency DC/DC converters due to the fast switching speed.FEATURES Large current capacity:IC(DC): -10 A, IC(pulse): -15 A High hF

Production specification PNP Silicon Epitaxial Transistor for High-speed Switching 2SA1615 FEATURES Large current capacity: Pb IC(DC):-10A,IC(pulse):-15A. Lead-free High hFE and low collector saturation voltage:hFE=200MIN.(@VCE=-2V,IC=-0.5A) VCE(sat)-0.25V(@IC=-4A,IB=-0.05A) TO-251 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise speci

isc Silicon PNP Power Transistor 2SA1615-ZDESCRIPTIONLarge current capacity:I = -10A I =-15AC(DC) C(pulse)High h and low saturation voltage:FEh = 200min (V =-2V,I =-0.5A)FE CE CV -0.25V (I =-4A,I =-0.05A)CE(sat) C B100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThe 2SA1615 is available fo