2SA1656 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SA1656
Material: Si
Polaridad de transistor: Pre-Biased-PNP
Resistencia de Entrada Base R1 = 4.7 kOhm
Resistencia Base-Emisor R2 = 4.7 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.3 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 200 typ MHz
Capacitancia de salida (Cc): 5.5 pF
Ganancia de corriente contínua (hFE): 30
Encapsulados: SPA
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2SA1656 datasheet
8.2. Size:161K nec
2sa1652.pdf 
DATA SHEET SILICON POWER TRANSISTOR 2SA1652 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1652 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT mm) speed switching and features a very low collector-to-emitter saturation. This transistor is ideal for use in switching power supplies, DC/DC converters, motor drivers, solenoid drivers, and ot
8.3. Size:148K nec
2sa1650.pdf
DATA SHEET SILICON POWER TRANSISTOR 2SA1650 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1650 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT mm) speed switching and features a very low collector-to-emitter saturation. This transistor is ideal for use in switching power supplies, DC/DC converters, motor drivers, solenoid drivers, and other low-
8.5. Size:151K jmnic
2sa1658.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1658 DESCRIPTION With TO-220F package Complement to type 2SC4369 Good linearity of hFE APPLICATIONS For general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE
8.6. Size:175K jmnic
2sa1651.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1651 DESCRIPTION With TO-220Fa package Fast switching speed Low collector saturation voltage APPLICATIONS For use in switching power supplies,DC-DC converters,motor drivers,solenoid drivers, and other low-voltage power supply devices, as well as for high current switching PINNING PIN DESCRIPTION 1 Em
8.7. Size:155K jmnic
2sa1659 2sa1659a.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1659 2SA1659A DESCRIPTION With TO-220F package Complement to type 2SC4370/4370A High transition frequency fT APPLICATIONS High voltage applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER C
8.8. Size:214K inchange semiconductor
2sa1658.pdf
isc Silicon PNP Power Transistor 2SA1658 DESCRIPTION Collector-Emitter Breakdown Voltage V = -30V(Min) CEO Complement to Type 2SC4369 Full-mold package that does not require an insulating board or bushing when mounting. Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose applications. ABSOLUTE MAXIMUM
8.9. Size:210K inchange semiconductor
2sa1657.pdf
isc Silicon PNP Power Transistor 2SA1657 DESCRIPTION Collector-Emitter Breakdown Voltage V = -150V(Min) CEO Complement to Type 2SC4368 Full-mold package that does not require an insulating board or bushing when mounting. Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV, monitor vertical output applications ABSO
8.10. Size:196K inchange semiconductor
2sa1659.pdf
INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1659 DESCRIPTION High Collector-Emitter Breakdown Voltage V = -160V(Min) CEO Complement to Type 2SC4370 Full-mold package that does not require an insulating board or bushing when mounting. Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage appl
8.11. Size:213K inchange semiconductor
2sa1651.pdf
isc Silicon PNP Power Transistor 2SA1651 DESCRIPTION Collector-Emitter Breakdown Voltage V = -100V(Min) CEO Fast switching speed Low collector saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV, monitor vertical output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN
8.12. Size:115K inchange semiconductor
2sa1659 2sa1659a.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1659 2SA1659A DESCRIPTION With TO-220F package Complement to type 2SC4370/4370A High transition frequency fT APPLICATIONS High voltage applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) SY
Otros transistores... 2SA1649, 2SA165, 2SA1650, 2SA1651, 2SA1652, 2SA1653, 2SA1654, 2SA1655, 2SC5200, 2SA1657, 2SA1658, 2SA1659, 2SA166, 2SA1660, 2SA1661, 2SA1662, 2SA1663
