2SA169 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Ordering number:EN2973PNP Epitaxial Planar Silicon Transistors2SA1699High-Voltage Driver ApplicationsFeatures Package Dimensions High breakdown voltage.unit:mm Adoption of MBIT process.2003A Excellent hFE linearity.[2SA1699]JEDEC : TO-92 B : BaseEIAJ : SC-43 C : CollectorSANYO : NP E : EmitterSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter

Ordering number:EN3018PNP/NPN Epitaxial Planar Silicon Transistors2SA1697/2SC4474High-Definition CRT Display,Video Output ApplicationsApplications Package Dimensions High-definition CRT display video output, wide-bandunit:mmamplifier.2041[2SA1697/2SC4474]Features High fT : fT=300MHz. High breakdown voltage : VCEO=200V min. Small reverse transfer capacitan

Ordering number:EN3017PNP/NPN Epitaxial Planar Silicon Transistors2SA1696/2SC4473High-Definition CRT Display,Video Output ApplicationsApplications Package Dimensions High-definition CRT display video output, wide-bandunit:mmamplifier.2041[2SA1696/2SC4473]Features High fT : fT=500MHz. High breakdown voltage : VCEO=120V min. Small reverse transfer capacitan

UNISONIC TECHNOLOGIES CO., LTD 2SA1693 Preliminary PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC 2SA1693 is a silicon PNP epitaxial planar transistor, it uses UTCs advanced technology to provide the customers with high DC current gain and high collector-base breakdown voltage, etc. The UTC 2SA1693 is suitable for audio and ge

UNISONIC TECHNOLOGIES CO., LTD 2SA1694 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC 2SA1694 is a silicon PNP epitaxial planar transistor, it uses UTCs advanced technology to provide the customers withhigh DC current gain and high collector-base breakdown voltage, etc. The UTC 2SA1694 is suitable for audio and general purpo

JMnic Product Specification Silicon PNP Power Transistors 2SA1693 DESCRIPTION With TO-3PN package Complement to type 2SC4466 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UNIT

JMnic Product Specification Silicon PNP Power Transistors 2SA1695 DESCRIPTION With TO-3PN package Complement to type 2SC4468 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UNIT

JMnic Product Specification Silicon PNP Power Transistors 2SA1694 DESCRIPTION With TO-3PN package Complement to type 2SC4467 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UNIT

2SA1693Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4466)Application : Audio and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions MT-100(TO3P)Symbol Ratings Unit Symbol Conditions Ratings Unit0.24.80.415.6VCBO 80 V ICBO VCB=80V 10max A 0.19.6 2.0IEBOVCEO 80 V VEB=6V

2SA1695Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4468)Application : Audio and General PurposeExternal Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol Ratings Unit Symbol Conditions Ratings Unit0.24.80.415.6VCBO 140 V ICBO VCB=140V 10max A0.19.6 2.0VCEO 140 V IEBO VEB=6V

2SA1694Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4467)Application : Audio and General PurposeExternal Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)RatingsSymbol Ratings Unit Symbol Conditions Unit0.24.80.415.6VCBO 120 V ICBO VCB=120V 10max A 0.19.6 2.010maxVCEO 120 V IEBO

isc Silicon PNP Power Transistor 2SA1693DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = -80V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC4466Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU

INCHANGE Semiconductor Product Specification Silicon PNP Power Transistor 2SA1695 DESCRIPTION High Collector-Emitter Breakdown Voltage- V(BR)CEO= -140V(Min) Good Linearity of hFE Complement to Type 2SC4468 APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage -140

isc Silicon PNP Power Transistor 2SA1694DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = -120V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC4467Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL