2SA169 Todos los transistores

 0.1. Size:72K  sanyo
 2sa1699.pdf

Ordering number EN2973 PNP Epitaxial Planar Silicon Transistors 2SA1699 High-Voltage Driver Applications Features Package Dimensions High breakdown voltage. unit mm Adoption of MBIT process. 2003A Excellent hFE linearity. [2SA1699] JEDEC TO-92 B Base EIAJ SC-43 C Collector SANYO NP E Emitter Specifications Absolute Maximum Ratings at Ta = 25 C Parameter

 0.2. Size:109K  sanyo
 2sa1697 2sc4474.pdf

Ordering number EN3018 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1697/2SC4474 High-Definition CRT Display, Video Output Applications Applications Package Dimensions High-definition CRT display video output, wide-band unit mm amplifier. 2041 [2SA1697/2SC4474] Features High fT fT=300MHz. High breakdown voltage VCEO=200V min. Small reverse transfer capacitan

 0.3. Size:122K  sanyo
 2sa1696 2sc4473.pdf

Ordering number EN3017 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1696/2SC4473 High-Definition CRT Display, Video Output Applications Applications Package Dimensions High-definition CRT display video output, wide-band unit mm amplifier. 2041 [2SA1696/2SC4473] Features High fT fT=500MHz. High breakdown voltage VCEO=120V min. Small reverse transfer capacitan

 0.4. Size:123K  utc
 2sa1693.pdf

UNISONIC TECHNOLOGIES CO., LTD 2SA1693 Preliminary PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC 2SA1693 is a silicon PNP epitaxial planar transistor, it uses UTC s advanced technology to provide the customers with high DC current gain and high collector-base breakdown voltage, etc. The UTC 2SA1693 is suitable for audio and ge

 0.5. Size:174K  utc
 2sa1694.pdf

UNISONIC TECHNOLOGIES CO., LTD 2SA1694 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC 2SA1694 is a silicon PNP epitaxial planar transistor, it uses UTC s advanced technology to provide the customers with high DC current gain and high collector-base breakdown voltage, etc. The UTC 2SA1694 is suitable for audio and general purpo

 0.6. Size:191K  jmnic
 2sa1693.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA1693 DESCRIPTION With TO-3PN package Complement to type 2SC4466 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT

 0.7. Size:183K  jmnic
 2sa1695.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA1695 DESCRIPTION With TO-3PN package Complement to type 2SC4468 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT

 0.8. Size:193K  jmnic
 2sa1694.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA1694 DESCRIPTION With TO-3PN package Complement to type 2SC4467 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT

 0.9. Size:27K  sanken-ele
 2sa1693.pdf

2SA1693 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4466) Application Audio and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions MT-100(TO3P) Symbol Ratings Unit Symbol Conditions Ratings Unit 0.2 4.8 0.4 15.6 VCBO 80 V ICBO VCB= 80V 10max A 0.1 9.6 2.0 IEBO VCEO 80 V VEB= 6V

 0.10. Size:28K  sanken-ele
 2sa1695.pdf

2SA1695 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4468) Application Audio and General Purpose External Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol Ratings Unit Symbol Conditions Ratings Unit 0.2 4.8 0.4 15.6 VCBO 140 V ICBO VCB= 140V 10max A 0.1 9.6 2.0 VCEO 140 V IEBO VEB= 6V

 0.11. Size:27K  sanken-ele
 2sa1694.pdf

2SA1694 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4467) Application Audio and General Purpose External Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Ratings Symbol Ratings Unit Symbol Conditions Unit 0.2 4.8 0.4 15.6 VCBO 120 V ICBO VCB= 120V 10max A 0.1 9.6 2.0 10max VCEO 120 V IEBO

 0.12. Size:222K  inchange semiconductor
 2sa1693.pdf

isc Silicon PNP Power Transistor 2SA1693 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC4466 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALU

 0.13. Size:103K  inchange semiconductor
 2sa1695.pdf

INCHANGE Semiconductor Product Specification Silicon PNP Power Transistor 2SA1695 DESCRIPTION High Collector-Emitter Breakdown Voltage- V(BR)CEO= -140V(Min) Good Linearity of hFE Complement to Type 2SC4468 APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -140

 0.14. Size:221K  inchange semiconductor
 2sa1694.pdf

isc Silicon PNP Power Transistor 2SA1694 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -120V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC4467 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL