2SA208H Datasheet. Equivalente

 8.1. Size:83K  renesas
 2sa2081.pdf

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

 8.2. Size:85K  renesas
 2sa2080.pdf

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

 8.3. Size:97K  rohm
 2sa2089s.pdf

2SA2089S Transistors Medium power transistor (-60V, -0.5A) 2SA2089S External dimensions (Unit mm) Features 1) High speed switching. SPT 4.0 2.0 (Tf Typ. 60ns at IC = -500mA) (SC-72) 2) Low saturation voltage, typically (Typ. -150mV at IC = -100mA, IB = -10mA) 0.45 3) Strong discharge power for inductive load and 2.5 0.5 0.45 capacitance load. 5.0 (1) Emitt

 8.4. Size:96K  rohm
 2sa2086s.pdf

2SA2086S Transistors Medium power transistor (-30V, -1A) 2SA2086S External dimensions (Unit mm) Features 1) High speed switching. (Tf Typ. 20ns at IC = -1A) 4.0 2.0 SPT 2) Low saturation voltage, typically (Typ. -150mV at IC = -1.0A, IB = -100mA) 3) Strong discharge power for inductive load and 0.45 capacitance load. 2.5 0.5 0.45 4) Complements the 2SC5874S 5

 8.5. Size:1274K  rohm
 2sa2088fra.pdf

AEC-Q101 Qualified Medium power transistor ( 60V, 0.5A) 2SA2088FRA Features Dimensions (Unit mm) 1) High speed switching. (Tf Typ. 60ns at IC = 500mA) UMT3 2) Low saturation voltage, typically 150mV at IC = 100mA, IB = 10mA) (Typ. 2.0 0.9 3) Strong discharge power for inductive load and capacitance load. 0.3 0.2 0.7 4) Complements the 2SC5876 2S

 8.6. Size:1535K  rohm
 2sa2088.pdf

2SA2088 Datasheet Medium power transistor (-60V, -0.5A) lOutline l Parameter Value UMT3 VCEO -60V IC -0.5A SOT-323 SC-70 lFeatures l 1)High speed switching. lInner circuit l (Tf Typ. 60ns at IC=-500mA) 2)Low saturation voltage, typically (Typ. -150mV at IC=-100mA, IB=-10mA) 3)Strong discharge pow

 8.7. Size:96K  rohm
 2sa2087.pdf

2SA2087 Transistors Power transistor (-30V, -2A) 2SA2087 External dimensions (Unit mm) Features 1) High speed switching. (Tf Typ. 20ns at IC = -2A) ATV 2.5 6.8 2) Low saturation voltage, typically (Typ. -200mV at IC = -1.0A, IB = -100mA) 3) Strong discharge power for inductive load and 0.65Max. capacitance load. 0.5 (1) (2) (3) 4) Complements the 2SC5875 2

 8.8. Size:75K  panasonic
 2sa2084.pdf

Transistors 2SA2084 Silicon PNP epitaxial planar type Unit mm For general amplification 0.40+0.10 0.05 0.16+0.10 0.06 3 Features High collector-emitter voltage (Base open) VCEO Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing 1 2 (0.95) (0.95) Absolute Maximum Ratings Ta = 25 C 1.9 0.1 2.90+0.20