2SA215 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SA2154CT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA2154CT General Purpose Amplifier Applications High voltage and high current : VCEO = -50V, IC = -100mA (max) Unit: mm0.60.05 Excellent hFE linearity 0.50.03 : hFE (IC = -0.1 mA) / hFE (IC = -2 mA)= 0.95 (typ.) High hFE : hFE = 120 to 400 Complementary to 2SC6026CT Absolute M

2SA2154MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA2154MFV General-Purpose Amplifier Applications Unit: mm1.2 0.05 High voltage and high current 0.80 0.05: VCEO = -50 V, IC = -150 mA (max) Excellent hFE linearity 1 : hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) 1 High hFE : hFE = 120~400 Complementary to 2SC6026MFV 3

2SA2154CT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA2154CT General Purpose Amplifier Applications High voltage and high current : V = -50V, I = -100mA (max) CEO C Unit: mm Excellent h linearity FE : h (I = -0.1 mA) / h (I = -2 mA)= 0.95 (typ.) FE C FE C High h h = 120 to 400 FE : FE Complementary to 2SC6026CT Absolute Maximum Ratings

2SA2154 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA2154 General-Purpose Amplifier Applications Unit: mm High voltage and high current : VCEO = -50 V, IC = -100 mA (max) Excellent hFE linearity : hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) High hFE : hFE = 120~400 1 Complementary to 2SC6026 32 0.80.050.10.051.00.05Ab

Ordering number : ENN8123 2SA2153PNP Epitaxial Planar Silicon Transistor2SA2153High-Current Switching ApplicationsApplications Voltage regulators, relay drivers, lamp drivers, electrical equipment.Features Adoption of MBIT process. Low saturation voltage. High current capacity and wide ASO.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Con

Ordering number : EN8123A2SA2153Bipolar Transistorhttp://onsemi.com-50V, -2A, Low VCE(sat), PNP Single PCPApplicaitons Voltage regulators, relay drivers, lamp drivers, electrical equipmentFeatures Adoption of MBIT process Low saturation voltage Large current capacity and wide ASOSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions R

2-1 TransistorsSpecifications List by Part NumberAbsolute Maximum RatingsICBO hFEVCBO VCEO Ic PcConditions ConditionsPart Number ApplicationsVCB VCE Ic(V) (V) (A) (W) ( A)min max(V) (V) (A)2SA1186 Audio, general-purpose 150 150 10 100 100 150 50 180 4 32SA1215 Audio, general-purpose 160 160 15 150 100 160 50 180 4 52SA1216

isc Silicon PNP Power Transistor 2SA2151DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = -200V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC6011Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

isc Silicon PNP Power Transistor 2SA2151ADESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = -230V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC6011AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER V