2SA496Y Todos los transistores

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isc Silicon PNP Power Transistor 2SA496 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -30V (Min.) (BR)CEO Collector-Emitter Saturation Voltage- V = -0.8V (Max.)@ I = -500mA CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for medium power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY... See More ⇒

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JMnic Product Specification Silicon PNP Power Transistors 2SA490 DESCRIPTION With TO-220 package Complement to type 2SC790 APPLICATIONS For power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE... See More ⇒

isc Silicon PNP Power Transistor 2SA490 DESCRIPTION High Collector Current I = -3A C Collector-Emitter Breakdown Voltage V = -40V(Min) (BR)CEO Complement to Type 2SC790 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS 10 Watts output applications Power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO... See More ⇒