2SA501 Todos los transistores

 

2SA501 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SA501

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.75 W

Tensión colector-base (Vcb): 40 V

Tensión colector-emisor (Vce): 30 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.2 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 100 MHz

Ganancia de corriente contínua (hFE): 35

Encapsulados: TO5

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2SA501 datasheet

 9.1. Size:756K  1
 2sa509.pdf pdf_icon

2SA501

 9.2. Size:94K  toshiba
 2sa496 2sa505.pdf pdf_icon

2SA501

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 9.3. Size:306K  vishay
 vs-fa72sa50lc.pdf pdf_icon

2SA501

VS-FA72SA50LC www.vishay.com Vishay Semiconductors Power MOSFET, 72 A FEATURES Fully isolated package Easy to use and parallel Low on-resistance Dynamic dV/dt rating Fully avalanche rated Simple drive requirements Low gate charge device SOT-227 Low drain to case capacitance Low internal inductance UL approved file E78996 Designed for

 9.4. Size:214K  inchange semiconductor
 2sa505.pdf pdf_icon

2SA501

isc Silicon PNP Power Transistor 2SA505 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -50V (Min.) (BR)CEO Collector-Emitter Saturation Voltage- V = -0.8V (Max.)@ I = -500mA CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for medium power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBO

MOSTRAR MÁS

Otros transistores... 2SA499O , 2SA499R , 2SA499Y , 2SA50 , 2SA500 , 2SA500O , 2SA500R , 2SA500Y , NJW0281G , 2SA502 , 2SA503 , 2SA503G , 2SA503O , 2SA503Y , 2SA504 , 2SA504G , 2SA504O .

 

 

 


 
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