2SA501 Todos los transistores

 

2SA501 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SA501
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.75 W
   Tensión colector-base (Vcb): 40 V
   Tensión colector-emisor (Vce): 30 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.2 A
   Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 100 MHz
   Ganancia de corriente contínua (hfe): 35
   Paquete / Cubierta: TO5

 Búsqueda de reemplazo de transistor bipolar 2SA501

 

2SA501 Datasheet (PDF)

 9.1. Size:756K  1
 2sa509.pdf

2SA501 2SA501

 9.2. Size:94K  toshiba
 2sa496 2sa505.pdf

2SA501 2SA501

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 9.3. Size:306K  vishay
 vs-fa72sa50lc.pdf

2SA501 2SA501

VS-FA72SA50LCwww.vishay.comVishay SemiconductorsPower MOSFET, 72 AFEATURES Fully isolated package Easy to use and parallel Low on-resistance Dynamic dV/dt rating Fully avalanche rated Simple drive requirements Low gate charge deviceSOT-227 Low drain to case capacitance Low internal inductance UL approved file E78996 Designed for

 9.4. Size:214K  inchange semiconductor
 2sa505.pdf

2SA501 2SA501

isc Silicon PNP Power Transistor 2SA505DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -50V (Min.)(BR)CEOCollector-Emitter Saturation Voltage-V = -0.8V (Max.)@ I = -500mACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for medium power amplifier applications.ABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBO

Otros transistores... 2SA499O , 2SA499R , 2SA499Y , 2SA50 , 2SA500 , 2SA500O , 2SA500R , 2SA500Y , 2SD669 , 2SA502 , 2SA503 , 2SA503G , 2SA503O , 2SA503Y , 2SA504 , 2SA504G , 2SA504O .

 

 
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