2SA562Y . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA562 DESCRIPTION Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation. Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-speed switching and Amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a

2SA562TM TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA562TM Audio Frequency Low Power Amplifier Applications Unit mm Driver Stage Amplifier Applications Switching Applications Excellent hFE linearity hFE (2) = 25 (min) at V = -6 V, I = -400 mA CE C 1 watt amplifier application. Complementary to 2SC1959. Maximum Ratings (Ta = = 25 C) =

MCC TM Micro Commercial Components 2SA562-O 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SA562-Y Phone (818) 701-4933 Fax (818) 701-4939 Features Excellent hFE) Linearlity Epoxy meets UL 94 V-0 flammability rating PNP Silicon Moisure Sensitivity Level 1 Lead Free Finish/RoHS Compliant ("P" Suffix designates Transistors RoHS Compliant. See o

MCC TM Micro Commercial Components 2SA562-O 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SA562-Y Phone (818) 701-4933 Fax (818) 701-4939 Features Excellent hFE) Linearlity Epoxy meets UL 94 V-0 flammability rating PNP Silicon Moisure Sensitivity Level 1 Lead Free Finish/RoHS Compliant ("P" Suffix designates Transistors RoHS Compliant. See o

2SA562 -0.5A, -35V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES Excellent hFE Linearity Millimeter REF. Min. Max. CLASSIFICATION OF hFE A 4.40 4.70 B 4.30 4.70 C 12.70 - Product-Rank 2SA562-O 2SA562-Y D 3.30 3.81 E 0.36 0.56 F 0.36 0.51 Range 70 140 120 240

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 2SA562 TRANSISTOR (PNP) 1. EMITTER FEATURES Excellent hFE inearlity 2. COLLECTOR 3. BASE Equivalent Circuit A562=Device code Solid dot=Green molding compound device, Z if none,the normal device Z=Rank of hFE 1 XXX=Code

2SA562(PNP) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Excellent hFE linearlity Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -500 m