2SA609SP Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SA609SP

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.2 W

Tensión colector-base (Vcb): 30 V

Tensión colector-emisor (Vce): 15 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 125 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 90 MHz

Capacitancia de salida (Cc): 14 pF

Ganancia de corriente contínua (hFE): 50

Encapsulados: SPA

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2SA609SP datasheet

 9.1. Size:69K  1
2sa606 2sa607 2sc959 2sc960.pdf pdf_icon

2SA609SP

 9.2. Size:260K  1
2sa608spa 2sa608np 2sa608knp.pdf pdf_icon

2SA609SP

 9.3. Size:36K  sanyo
2sa608n 2sc536n.pdf pdf_icon

2SA609SP

Ordering number ENN6324A 2SA608N / 2SC536N PNP / NPN Epitaxial Planar Silicon Transistors 2SA608N / 2SC536N Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Capable of being used in the low frequency to high unit mm frequency range. 2205 [2SA608N / 2SC536N] 4.5 Features 3.7 3.5 Large current capacity and wide ASO. 0.5 0.45 0.44 1

 9.4. Size:40K  sanyo
2sa608 2sc536n.pdf pdf_icon

2SA609SP

Ordering number ENN6324 PNP/NPN Epitaxial Planar Silicon Transistors 2SA608N/2SC536N Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Capable of being used in the low frequency to high unit mm frequency range. 2164 [2SA608N/2SC536N] 4.5 Features 3.7 3.5 Large current capacity and wide ASO. 0.45 0.5 1.27 0.45 0.44 1 2 3 1 Emitter

Otros transistores... 2SA607S, 2SA608, 2SA608K, 2SA608KNP, 2SA608NP, 2SA608SPA, 2SA609, 2SA609NP, BD140, 2SA61, 2SA610, 2SA611, 2SA612, 2SA613, 2SA614, 2SA615, 2SA616