2SA625 Todos los transistores

 

2SA625 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SA625
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.7 W
   Tensión colector-base (Vcb): 100 V
   Tensión colector-emisor (Vce): 60 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 0.5 A
   Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 50 MHz
   Ganancia de corriente contínua (hfe): 60
   Paquete / Cubierta: TO5
 

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2SA625 Datasheet (PDF)

 9.1. Size:145K  jmnic
 2sa626.pdf pdf_icon

2SA625

JMnic Product Specification Silicon PNP Power Transistors 2SA626 DESCRIPTION With TO-3 package Wide area of safe operation High current capability:IC=-6A APPLICATIONS For audio frequency output applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER

 9.2. Size:145K  jmnic
 2sa627.pdf pdf_icon

2SA625

JMnic Product Specification Silicon PNP Power Transistors 2SA627 DESCRIPTION With TO-3 package Wide area of safe operation High current capability:IC=-7A APPLICATIONS For audio frequency output applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER

 9.3. Size:212K  inchange semiconductor
 2sa626.pdf pdf_icon

2SA625

isc Silicon PNP Power Transistors 2SA626DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -70V(Min.)(BR)CEOLow Collector Saturation Voltage-: V = -1.5V(Max.)@ I = -5ACE(sat) CGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency power amplifier and low speed switchingSuitable f

 9.4. Size:215K  inchange semiconductor
 2sa627.pdf pdf_icon

2SA625

isc Silicon PNP Power Transistors 2SA627DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min.)(BR)CEOLow Collector Saturation Voltage-: V = -1.5V(Max.)@ I = -5ACE(sat) CGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency power amplifier and low speed switchingSuitable f

MOSTRAR MÁS

Otros transistores... 2SA617K , 2SA618 , 2SA618K , 2SA620 , 2SA621 , 2SA622 , 2SA623 , 2SA624 , MJE340 , 2SA626 , 2SA627 , 2SA628 , 2SA628A , 2SA629 , 2SA631 , 2SA633 , 2SA634 .

History: BD233 | STN690A | ECG32 | KF124 | 2SA669 | MJE6043T | 2SC4689

 

 
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