2SA659
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SA659
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.3
W
Tensión colector-base (Vcb): 50
V
Tensión colector-emisor (Vce): 50
V
Tensión emisor-base (Veb): 4
V
Corriente del colector DC máxima (Ic): 0.2
A
Temperatura operativa máxima (Tj): 125
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 45
MHz
Ganancia de corriente contínua (hfe): 80
Paquete / Cubierta:
TO92
Búsqueda de reemplazo de transistor bipolar 2SA659
2SA659
Datasheet (PDF)
9.1. Size:145K jmnic
2sa658.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SA658 DESCRIPTION With TO-3 package Wide area of safe operation Complement to type 2SC521 APPLICATIONS For audio frequency and power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL
9.2. Size:145K jmnic
2sa656.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA656 DESCRIPTION With TO-3 package Wide area of safe operation Complement to type 2SC519 APPLICATIONS For audio frequency and power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL
9.3. Size:145K jmnic
2sa657.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA657 DESCRIPTION With TO-3 package Wide area of safe operation Complement to type 2SC520 APPLICATIONS For audio frequency and power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL
9.4. Size:189K inchange semiconductor
2sa658.pdf
isc Silicon PNP Power Transistor 2SA658DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -50V(Min.)(BR)CEOComplement to Type 2SC521Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Power switching applications.DC-DC converter applications.Regulator applications.ABSOLUTE MAXIMUM RAT
9.5. Size:189K inchange semiconductor
2sa651.pdf
isc Silicon PNP Power Transistor 2SA651DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -150V(Min.)(BR)CEOWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltag
9.6. Size:189K inchange semiconductor
2sa650.pdf
isc Silicon PNP Power Transistor 2SA650DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -150V(Min.)(BR)CEOWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltag
9.7. Size:187K inchange semiconductor
2sa656.pdf
isc Silicon PNP Power Transistor 2SA656DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -110V(Min.)(BR)CEOComplement to Type 2SC519Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Power switching applications.DC-DC converter applications.Regulator applications.ABSOLUTE MAXIMUM RA
9.8. Size:190K inchange semiconductor
2sa652.pdf
isc Silicon PNP Power Transistor 2SA652DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min.)(BR)CEOContunuous Collector Current I = -1ACPower DissipationP = 15W @T = 25C CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier color TV verticaldeflection output appli
9.9. Size:189K inchange semiconductor
2sa653.pdf
isc Silicon PNP Power Transistor 2SA653DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min.)(BR)CEOContunuous Collector Current I = -1ACPower Dissipation P = 15W @T = 25C CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier color TV verticaldeflection output appl
9.10. Size:189K inchange semiconductor
2sa657.pdf
isc Silicon PNP Power Transistor 2SA657DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min.)(BR)CEOComplement to Type 2SC520Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Power switching applications.DC-DC converter applications.Regulator applications.ABSOLUTE MAXIMUM RAT
Otros transistores... 2SA653
, 2SA653A
, 2SA656
, 2SA656A
, 2SA657
, 2SA657A
, 2SA658
, 2SA658A
, MPSA42
, 2SA659NP
, 2SA66
, 2SA661
, 2SA663
, 2SA666
, 2SA666A
, 2SA668
, 2SA669
.
