2SA675 Todos los transistores

 

2SA675 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SA675
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.25 W
   Tensión colector-base (Vcb): 80 V
   Tensión colector-emisor (Vce): 80 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 125 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 50 MHz
   Capacitancia de salida (Cc): 10 pF
   Ganancia de corriente contínua (hfe): 120
   Paquete / Cubierta: TO92

 Búsqueda de reemplazo de transistor bipolar 2SA675

 

2SA675 Datasheet (PDF)

 ..1. Size:89K  nec
2sa675.pdf

2SA675
2SA675

DATA SHEETSILICON TRANSISTOR2SA675PNP SILICON EPITAXIAL TRANSISTORFOR DRIVING FLUORESCENT INDICATOR PANNELThe 2SA675 is a resin sealed mold transistor and is ideal for PACKAGE DRAWING (UNIT: mm)dynamic drivers of counting indicator pannel such as fluorescentindicator pannel due to high voltage. High voltageVCBO > -80 V, VCER > -80 V Excellent linearity for current of D

 9.1. Size:98K  renesas
r07ds0430ej 2sa673ak-1.pdf

2SA675
2SA675

Preliminary Datasheet R07DS0430EJ04002SA673A(K) (Previous: REJ03G0627-0300)Rev.4.00Silicon PNP Epitaxial Jun 07, 2011Application Low frequency amplifier Medium speed switching Outline RENESAS Package code: PRSS0003DA-A(Package name: TO-92 (1))1. Emitter2. Collector3. Base321Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings UnitCollect

 9.2. Size:82K  renesas
r07ds0429ej 2sa673 673a-1.pdf

2SA675
2SA675

Preliminary Datasheet R07DS0429EJ03002SA673, 2SA673A (Previous: REJ03G0626-0200)Rev.3.00Silicon PNP Epitaxial Jun 07, 2011Application Low frequency amplifier Complementary pair with 2SC1213 and 2SC1213A Outline RENESAS Package code: PRSS0003DA-A(Package name: TO-92 (1))1. Emitter2. Collector3. Base321Absolute Maximum Ratings (Ta = 25C) Item S

 9.3. Size:31K  hitachi
2sa673.pdf

2SA675
2SA675

2SA673, 2SA673ASilicon PNP EpitaxialApplication Low frequency amplifier Complementary pair with 2SC1213 and 2SC1213AOutlineTO-92 (1)1. Emitter2. Collector3. Base3212SA673, 2SA673AAbsolute Maximum Ratings (Ta = 25C)Item Symbol 2SA673 2SA673A UnitCollector to base voltage VCBO 35 50 VCollector to emitter voltage VCEO 35 50 VEmitter to base

 9.4. Size:116K  mospec
2sa671.pdf

2SA675
2SA675

AAA

 9.5. Size:354K  secos
2sa673-2sa673a.pdf

2SA675
2SA675

2SA673, 2SA673A PNP General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free FEATURES TO-92 Low frequency amplifier G H Complementary pair with 2SC1213 and 2SC1213A 1Emitter 1112Collector 222 3Base 333J CLASSIFICATION OF hFE(1) A DProduct-Rank 2SA673-B 2SA673-C 2SA673-D Mil

 9.6. Size:428K  jiangsu
2sa673a.pdf

2SA675
2SA675

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO 92 2SA673A TRANSISTOR (PNP) 1. EMITTER FEATURES 2. COLLECTOR Low Frequency Amplifier 3. BASE Complementary Pair with 2SC1213A MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50

 9.7. Size:185K  jmnic
2sa679 2sa680.pdf

2SA675
2SA675

JMnic Product Specification Silicon PNP Power Transistors 2SA679 2SA680 DESCRIPTION With TO-3 package Complement to type 2SC1079/1080 High power dissipation APPLICATIONS For audio power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMET

 9.8. Size:159K  jmnic
2sa671.pdf

2SA675
2SA675

JMnic Product Specification Silicon PNP Power Transistors 2SA671 DESCRIPTION With TO-220 package Complement to type 2SC1061 Low collector saturation voltage Note:type 2SA670 with short pin APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified o

 9.9. Size:108K  inchange semiconductor
2sa670.pdf

2SA675
2SA675

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA670 DESCRIPTION With TO-220 package Low collector saturation voltage APPLICATIONS Inverters;converters Power amplification Switching regulator ,driver PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 BaseAb

 9.10. Size:199K  inchange semiconductor
2sa679.pdf

2SA675
2SA675

isc Silicon PNP Power Transistor 2SB679DESCRIPTIONHigh Power Dissipation-: PC= 100W(Max.)@T =25CCollector-Emitter Breakdown Voltage-: V = -120V(Min.)(BR)CEOComplement to Type 2SC1079Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)

 9.11. Size:205K  inchange semiconductor
2sa671.pdf

2SA675
2SA675

isc Silicon PNP Power Transistor 2SA671DESCRIPTIONLow Collector Saturation Voltage-: V = -1.0V(Max)@ I = -2.0ACE(SUS) CDC Current Gain: h = 35-320@ I = -0.5AFE CComplement to Type 2SC1061Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in low frequency power amplifierapplications.ABSOLUTE MAXIMUM

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
Back to Top

 


2SA675
  2SA675
  2SA675
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: GN1A3Q | D965-KEHE | 2SD662B | 2SD661A | 2SC3080 | S9018L | S9012J | 2SA73L | 2SA73H | 2SA1015H | WT955 | TS13005CK | TP5001P3 | SS8550W-L | SS8550W-J | SS8550W-H | SS8550E | SS8550D | SS8550C | SS8050E | SS8050D

 

 

 
Back to Top