2SA713S . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Transistor 2SA719, 2SA720 Silicon PNP epitaxial planer type For low-frequency power amplification and driver amplification Unit mm Complementary to 2SC1317 and 2SC1318 5.0 0.2 4.0 0.2 Features Complementary pair with 2SC1317 and 2SC1318. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collector to 2SA719 30 VCBO V +0.2 +0.2 base voltage 2SA720 60 0.45

2SA715 Silicon PNP Epitaxial Application Low frequency power amplifier complementary pair with 2SC1162 Outline TO-126 MOD 1. Emitter 2. Collector 3. Base 1 2 3 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Rating Unit Collector to base voltage VCBO 35 V Collector to emitter voltage VCEO 35 V Emitter to base voltage VEBO 5 V Collector current IC 2.5 A Collector

2SA719 -0.5 A, -30 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES For low-frequency power amplification and driver amplification. G H Emitter Collector Base CLASSIFICATION OF hFE J A D Product-Rank 2SA719-Q 2SA719-R 2SA719-S Millimeter REF. B M

JMnic Product Specification Silicon PNP Power Transistors 2SA714 DESCRIPTION With TO-3 package Wide area of safe operation APPLICATIONS For power amplifier and power switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UN

JMnic Product Specification Silicon PNP Power Transistors 2SA715 DESCRIPTION With TO-126 package Complement to type 2SC1162 APPLICATIONS Low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute Maximun Ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base volta

2SA719/2SA720(PNP) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features For low-frequency power amplification and driver amplification MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 2SA719 -30 V 2SA720 -60 VCEO Collector-Emitter Voltage 2SA719 -25 V 2SA720 -50 Dimensions in inch

2SA715F(BR3CA715QF) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-126F PNP Silicon PNP transistor in a TO-126F Plastic Package. / Features 2SC1162F(BR3DA1162QF) Complementary pair with 2SC1162F(BR3DA1162QF). / Applications Low frequency power amplifier applications.

isc Silicon PNP Power Transistor 2SA714 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min.) (BR)CEO Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications. Power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collect

isc Silicon PNP Power Transistor 2SA715 DESCRIPTION Good Linearity of h FE Collector-Emitter Breakdown Voltage- V = -35V (Min) (BR)CEO Complement to Type 2SC1162 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER