2SA73 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

September 20092SA733PNP General Purpose AmplifierFeatures This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 68.TO-9211. Emitter 2. Collector 3.BaseAbsolute Maximum Ratings* TA=25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage -60 VVCEO Collector-Emitter Volta

UNISONIC TECHNOLOGIES CO., LTD 2SA733 PNP SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC 2SA733 is a low frequency amplifier. FEATURES * Collector-emitter voltage: BVCEO=-50V * Collector current up to -150mA * High hFE linearity * Complimentary to 2SC945 ORDERING INFORMATION Ordering Number Pin Assignment

2SA733 -60 V, -150mA PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES Complementary of the 2SC945 A Collector to base voltage: -60V L33MARKING Top View C B11 2Product Marking Code 2K E2SA733 CS DH JF GCLASSIFICATION OF hFE Product-Rank 2SA73

JMnic Product Specification Silicon PNP Power Transistors 2SA738 DESCRIPTION With TO-126 package High current Complement to type 2SC1368 APPLICATIONS Driver stages in high-fidelity amplifiers and television circuits PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDIT

2SA733 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 PNP Silicon PNP transistor in a TO-92 Plastic Package. / Features h FE High hFE and excellent hFE linearity. / Applications Driver stage of AF power amplifier. / Equivalent Circuit

2SA733M(BR3CG733M) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 PNP Silicon PNP transistor in a SOT-23 Plastic Package. / Features h FEHigh hFE and excellent hFE linearity. / Applications Driver stage of AF power amplifier. / Equivalent Circ

2SA733 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups, R, O, Y, P and L, according to its DC current gain. As complementary type the NPN transistor 2SC945 is recommended. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Collector 3. Base

SEMICONDUCTOR 2SA733LT1 Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR Package:SOT-23 * Collector Current : Ic=150mA ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol Rating UnitCollector-Base Voltage Vcbo -60 V Collector-Emitter Voltage Vceo -50 V Emitter-Base Voltage Vebo -5 V PIN: 1 2 3Collector Current Ic -150

SMD Type Trans s o sSMD Type TransiisttorrsPNP Transistors2SA733SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13FeaturesCollector-Base Voltage: VCBO=-60V1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector to base voltage VCBO -60 VCollector to emitter voltage VCEO -50 V

Product specification Silicon Epitaxial Planar Transistor 2SA733 FEATURES Pb Excellent h Linearity. FELead-free Power dissipationP =250mW. D High h . FEAPPLICATIONS Designed for use in driver stage of amplifier. SOT-23 ORDERING INFORMATION Type No. Marking Package Code 2SA733 CS SOT-23 : none is for Lead Free package; G is f

2SA733(3CG733) PNP /SILICON PNP TRANSISTOR :/Purpose: Driver stage of AF power amplifier. :h /Features: High h and excellent h linearity. FEFE FE /Absolute Maximum Ratings(Ta=25) Symbol Rating Unit V -60 V CBO V -50 V CEO V -5.0 V EBO I -150 mA

RUMW UMW 2SA73 SOT-23 Plastic-Encapsulate Transistors TRANSI STOR (PNP)2SA73MARKING: Equivalent Circuit:SOT-231.BASE2.EMITTER3.COLLECTORFEATURES: Complement to C945 Collector-Base VoltageMAXIMUM RATINGS (Ta=25 unless otherwise noted)Parameter Symbol Value UnitCollector-Base Voltage VCBO -60 VCollector-Emitter Voltage VCEO -50 VEmitter-Base Voltage VE

isc Silicon PNP Power Transistor 2SA738DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -25V (Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC1368Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as driver stages in high-fidelity amplifiersand TV circuits.ABSOLUTE MAXIMUM RATINGS(Ta=25)S