2SA741H Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SA741H 📄📄
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.36 W
Tensión colector-base (Vcb): 20 V
Tensión colector-emisor (Vce): 20 V
Tensión emisor-base (Veb): 4 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 200 MHz
Ganancia de corriente contínua (hFE): 30
Encapsulados: TO18
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2SA741H datasheet
9.2. Size:31K hitachi
2sa743.pdf 
2SA743, 2SA743A Silicon PNP Epitaxial Application Low frequency power amplifier complementary pair with 2SC1212 and 2SC1212A Outline TO-126 MOD 1. Emitter 2. Collector 3. Base 1 2 3 Absolute Maximum Ratings (Ta = 25 C) Ratings Item Symbol 2SA743 2SA743A Unit Collector to base voltage VCBO 50 80 V Collector to emitter voltage VCEO 50 80 V Emitter to base voltage VEB
9.3. Size:186K jmnic
2sa743 2sa743a.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA743 2SA743A DESCRIPTION With TO-126 package Complement to type 2SC1212/1212A APPLICATIONS For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2SA743
9.4. Size:147K jmnic
2sa740.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA740 DESCRIPTION With TO-220 package Complement to type 2SC1448 APPLICATIONS Power amplifier applications Vertical output applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base Absolute maximum ratings(Ta=25 ) SYM
9.5. Size:151K jmnic
2sa744 2sa745 2sa745a.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA744/745/745A DESCRIPTION With TO-3 package Complement to type 2SC1402/1403/1403A APPLICATIONS For power switching and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER
9.6. Size:147K jmnic
2sa747.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA747 DESCRIPTION With TO-3 package Wide area of safe operation Complement to type 2SC1116 APPLICATIONS For audio and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETE
9.7. Size:147K jmnic
2sa746.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA746 DESCRIPTION With TO-3 package Wide area of safe operation Complement to type 2SC1115 APPLICATIONS For audio and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETE
9.8. Size:109K jmnic
2sa748.pdf
Product Specification www.jmnic.com Silicon PNP Power Transistors 2SA748 DESCRIPTION With TO-220 package Complement to type 2SC1398 Large collector power dissipation APPLICATIONS For medium power amplifier applicattions PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Fig.1 simplified outline (TO-220) and symbol Absolute maxim
9.9. Size:150K jmnic
2sa747a.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA747A DESCRIPTION With TO-3 package Wide area of safe operation Complement to type 2SC1116A APPLICATIONS For audio and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAME
9.10. Size:194K inchange semiconductor
2sa740.pdf
isc Silicon PNP Power Transistor 2SA740 DESCRIPTION Collector-Emitter Breakdown Voltage V = -150V(Min) (BR)CEO DC Current Gain h = 40-140@ I = -0.5A FE C Complementary to Type 2SC1448 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications. Vertical output applications. ABSOLUTE MAXIMUM RATINGS(T
9.11. Size:190K inchange semiconductor
2sa744.pdf
isc Silicon PNP Power Transistor 2SA744 DESCRIPTION High Power Dissipation- PC= 70W(Max.)@T =25 C Collector-Emitter Breakdown Voltage- V = -80V(Min.) (BR)CEO Complement to Type 2SC1402 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB
9.12. Size:196K inchange semiconductor
2sa747.pdf
isc Silicon PNP Power Transistor 2SA747 DESCRIPTION High Power Dissipation- P = 100W(Max.)@T =25 C C Collector-Emitter Breakdown Voltage- V = -120V(Min.) (BR)CEO Complement to Type 2SC1116 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a
9.13. Size:190K inchange semiconductor
2sa745a.pdf
isc Silicon PNP Power Transistor 2SA745A DESCRIPTION High Power Dissipation- PC= 70W(Max.)@T =25 C Collector-Emitter Breakdown Voltage- V = -120V(Min.) (BR)CEO Complement to Type 2SC1403A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a S
9.14. Size:188K inchange semiconductor
2sa746.pdf
isc Silicon PNP Power Transistor 2SA746 DESCRIPTION High Power Dissipation- P = 100W(Max.)@T =25 C C Collector-Emitter Breakdown Voltage- V = -80V(Min.) (BR)CEO Complement to Type 2SC1115 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a S
9.15. Size:198K inchange semiconductor
2sa743.pdf
isc Silicon PNP Power Transistor 2SA743 DESCRIPTION Good Linearity of h FE High Collector-Emitter Breakdown Voltage- V = -50V (Min) (BR)CEO Complement to Type 2SC1212 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARA
9.16. Size:198K inchange semiconductor
2sa743a.pdf
isc Silicon PNP Power Transistor 2SA743A DESCRIPTION Good Linearity of h FE High Collector-Emitter Breakdown Voltage- V = -80V (Min) (BR)CEO Complement to Type 2SC1212A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PA
9.17. Size:69K inchange semiconductor
2sa745.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA745 DESCRIPTION High Power Dissipation- PC= 70W(Max.)@TC=25 Collector-Emitter Breakdown Voltage- V(BR)CEO= -100V(Min.) Complement to Type 2SC1403 APPLICATIONS Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Col
9.18. Size:210K inchange semiconductor
2sa748.pdf
isc Silicon PNP Power Transistor 2SA748 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -50V(Min) (BR)CEO Large Power Dissipation- P = 15W@ T = 25 C C Complement to Type 2SC1398 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for medium power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SY
9.19. Size:190K inchange semiconductor
2sa747a.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA747A DESCRIPTION With TO-3 package Wide area of safe operation Complement to type 2SC1116A APPLICATIONS For audio and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=
Otros transistores... 2SA732, 2SA733, 2SA738, 2SA739, 2SA74, 2SA740, 2SA740A, 2SA741, BC549, 2SA742, 2SA742H, 2SA743, 2SA743A, 2SA744, 2SA745, 2SA745A, 2SA746
