2SA745 Todos los transistores

 ..1. Size:151K  jmnic
 2sa744 2sa745 2sa745a.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA744/745/745A DESCRIPTION With TO-3 package Complement to type 2SC1402/1403/1403A APPLICATIONS For power switching and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER

 ..2. Size:69K  inchange semiconductor
 2sa745.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA745 DESCRIPTION High Power Dissipation- PC= 70W(Max.)@TC=25 Collector-Emitter Breakdown Voltage- V(BR)CEO= -100V(Min.) Complement to Type 2SC1403 APPLICATIONS Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Col

 0.1. Size:190K  inchange semiconductor
 2sa745a.pdf

isc Silicon PNP Power Transistor 2SA745A DESCRIPTION High Power Dissipation- PC= 70W(Max.)@T =25 C Collector-Emitter Breakdown Voltage- V = -120V(Min.) (BR)CEO Complement to Type 2SC1403A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a S

 9.1. Size:123K  panasonic
 2sa748.pdf

 9.2. Size:31K  hitachi
 2sa743.pdf

2SA743, 2SA743A Silicon PNP Epitaxial Application Low frequency power amplifier complementary pair with 2SC1212 and 2SC1212A Outline TO-126 MOD 1. Emitter 2. Collector 3. Base 1 2 3 Absolute Maximum Ratings (Ta = 25 C) Ratings Item Symbol 2SA743 2SA743A Unit Collector to base voltage VCBO 50 80 V Collector to emitter voltage VCEO 50 80 V Emitter to base voltage VEB

 9.3. Size:186K  jmnic
 2sa743 2sa743a.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA743 2SA743A DESCRIPTION With TO-126 package Complement to type 2SC1212/1212A APPLICATIONS For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2SA743

 9.4. Size:147K  jmnic
 2sa740.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA740 DESCRIPTION With TO-220 package Complement to type 2SC1448 APPLICATIONS Power amplifier applications Vertical output applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base Absolute maximum ratings(Ta=25 ) SYM

 9.5. Size:147K  jmnic
 2sa747.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA747 DESCRIPTION With TO-3 package Wide area of safe operation Complement to type 2SC1116 APPLICATIONS For audio and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETE

 9.6. Size:147K  jmnic
 2sa746.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA746 DESCRIPTION With TO-3 package Wide area of safe operation Complement to type 2SC1115 APPLICATIONS For audio and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETE

 9.7. Size:109K  jmnic
 2sa748.pdf

Product Specification www.jmnic.com Silicon PNP Power Transistors 2SA748 DESCRIPTION With TO-220 package Complement to type 2SC1398 Large collector power dissipation APPLICATIONS For medium power amplifier applicattions PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Fig.1 simplified outline (TO-220) and symbol Absolute maxim

 9.8. Size:150K  jmnic
 2sa747a.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA747A DESCRIPTION With TO-3 package Wide area of safe operation Complement to type 2SC1116A APPLICATIONS For audio and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAME

 9.9. Size:194K  inchange semiconductor
 2sa740.pdf

isc Silicon PNP Power Transistor 2SA740 DESCRIPTION Collector-Emitter Breakdown Voltage V = -150V(Min) (BR)CEO DC Current Gain h = 40-140@ I = -0.5A FE C Complementary to Type 2SC1448 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications. Vertical output applications. ABSOLUTE MAXIMUM RATINGS(T

 9.10. Size:190K  inchange semiconductor
 2sa744.pdf

isc Silicon PNP Power Transistor 2SA744 DESCRIPTION High Power Dissipation- PC= 70W(Max.)@T =25 C Collector-Emitter Breakdown Voltage- V = -80V(Min.) (BR)CEO Complement to Type 2SC1402 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB

 9.11. Size:196K  inchange semiconductor
 2sa747.pdf

isc Silicon PNP Power Transistor 2SA747 DESCRIPTION High Power Dissipation- P = 100W(Max.)@T =25 C C Collector-Emitter Breakdown Voltage- V = -120V(Min.) (BR)CEO Complement to Type 2SC1116 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a

 9.12. Size:188K  inchange semiconductor
 2sa746.pdf

isc Silicon PNP Power Transistor 2SA746 DESCRIPTION High Power Dissipation- P = 100W(Max.)@T =25 C C Collector-Emitter Breakdown Voltage- V = -80V(Min.) (BR)CEO Complement to Type 2SC1115 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a S

 9.13. Size:198K  inchange semiconductor
 2sa743.pdf

isc Silicon PNP Power Transistor 2SA743 DESCRIPTION Good Linearity of h FE High Collector-Emitter Breakdown Voltage- V = -50V (Min) (BR)CEO Complement to Type 2SC1212 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARA

 9.14. Size:198K  inchange semiconductor
 2sa743a.pdf

isc Silicon PNP Power Transistor 2SA743A DESCRIPTION Good Linearity of h FE High Collector-Emitter Breakdown Voltage- V = -80V (Min) (BR)CEO Complement to Type 2SC1212A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PA

 9.15. Size:210K  inchange semiconductor
 2sa748.pdf

isc Silicon PNP Power Transistor 2SA748 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -50V(Min) (BR)CEO Large Power Dissipation- P = 15W@ T = 25 C C Complement to Type 2SC1398 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for medium power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SY

 9.16. Size:190K  inchange semiconductor
 2sa747a.pdf

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA747A DESCRIPTION With TO-3 package Wide area of safe operation Complement to type 2SC1116A APPLICATIONS For audio and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=